SPECIFICATION Device Name : IGBT Module Type Name : 6MBI100S-060 Spec. No. : MS5F 5327 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 27 ’03 Y.Kobayashi Jan. 27 ’03 T.Miyasaka K.Yamada T.Fujihira MS5F5327 1 13 H04-004-07 Revised Records Date Classification Jan.- 27 - ’03 enactment Ind. Content Applied date Drawn Issued date MS5F5327 Checked Approved T.Miyasaka K.Yamada T.Fujihira 2 13 H04-004-06 6MBI100S-060 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit 21(P) 13(P) 1(Gu) 5(Gv) 9(Gw) 2(Eu) 6(Ev) 10(Ew) 19(U) 17(V) 3(Gx) 7(Gy) 11(Gz) 4(Ex) 8(Ey) 12(Ez) 20(N) 15(W) 14(N) MS5F5327 3 13 H04-004-03 3. Absolute Maximum Ratings ( at Tc= 25C unless otherwise specified ） Collector-Emitter voltage V CES Maximum Ratings 600 Gate-Emitter voltage V GES +-20 Ic Continuous 100 Ic pulse -Ic 1ms 200 Items Symbols Collector current Conditions Units V V A 100 -Ic pulse 1ms 200 Pc 1 device 400 W Collector Power Dissipation Junction temperature Tj 150 C Storage temperature Tstg -40~ +125 C (*1) Viso Isolation voltage Mounting Screw Torque AC : 1min. 2500 V 3.5 Nm (*2) (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : 2.5~3.5 Nm (M5) 4. Electrical characteristics ( at Tj= 25C unless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols Characteristics min. typ. Max. Conditions ICES VGE = 0 V, VCE = 600 V － － 1.0 mA IGES VCE = 0 V, VGE = +-20 V － － 200 nA VGE(th) VCE = 20 V, 100 mA 5.5 7.8 8.5 V VCE(sat) VGE = Ic = 15 V Tj = 25 C － 2.15 2.6 V 100 A Tj = 125 C － 2.3 － Ic = Input capacitance Cies VGE = 0V － 10000 － Output capacitance Coes VCE = 10 V － 1600 － Reverse transfer capacitance Cres f= ton Turn-on time tr Turn-off time Vcc = Ic = tr(i) VGE = toff RG = － 1100 － 300 V 1 MHz － 0.45 1.2 100 A － 0.25 0.6 +-15 V － 0.08 － － 0.40 1.0 － 0.05 0.35 － 1.95 2.7 － 1.8 － － － 0.3 24 ohm tf Forward on voltage Reverse recovery time Units VF trr IF = IF = 100 A Tj = 25 C Tj = 125 C 100 A pF us V us 5. Thermal resistance characteristics Items Thermal resistance Symbols Rth(j-c) (1 device) Conditions IGBT Characteristics min. typ. Max. － FWD － － － 0.05 with Thermal Compound (*) － * This is the value which is defined mounting on the additional cooling fin with thermal compound. Contact Thermal resistance Rth(c-f) MS5F5327 Units 0.31 0.70 C/W － 4 13 H04-004-03 6. Indication on module 6MBI100S-060 100A 600V Place of manufucturing Lot No. 7. Applicable category This specification is applied to IGBT Module named ６ＭＢＩ１００Ｓ－０６０． 8. Storage and transportation notes ・ The module should be stored at a standard temperature of 5 to 35℃ and humidity of 45 to 75% . ・ Store modules in a place with few temperature changes in order to avoid condensation on the module surface. ・ Avoid exposure to corrosive gases and dust. ・ Avoid excessive external force on the module. ・ Store modules with unprocessed terminals. ・ Do not drop or otherwise shock the modules when tranporting. ～ ～ 9. Definitions of switching time 90% 0V 0V V GE L trr Irr Ic 90% 10% 10% ～ ～ 0V 0A V CE Ic 90% Vcc RG ～ ～ VCE 10% VCE tr(i) V GE tr Ic tf toff ton 10. Packing and Labeling Packing box Material : Cardboad Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box Display * Each modules are packed with electrical static protection. MS5F5327 5 13 H04-004-03 11. Reliability test results Reliability Test Items Test categories Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Mechanical Tests 3 Vibration 4 Shock 5 Solderabitlity 6 Resistance to Soldering Heat Environment Tests 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker 5 Temperature Cycle Reference Acceptnorms Number ance EIAJ of sample number ED-4701 Test methods and conditions Pull force : 20N Test time : 10±1 sec. Screw torque : 2.5 ~ 3.5 N･m (M5) Test time : 10±1 sec. Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 10G Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 1000G Pulse width : 0.5msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Solder temp. : 235±5 ℃ Immersion time : 5±1sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Solder temp. : 260±5 ℃ Immersion time : 10±1sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Storage temp. : 125±5 ℃ Test duration : 1000hr. Storage temp. : -40±5 ℃ Test duration : 1000hr. Storage temp. : 85±3 ℃ Relative humidity : 85±5% Test duration : 1000hr. Test temp. : 121 ℃ A - 111 Method 1 A - 112 Method 2 A - 121 5 (1:0) 5 (1:0) 5 (1:0) A - 122 5 (1:0) A - 131 5 (1:0) A - 132 5 (1:0) B - 111 5 (1:0) B - 112 5 (1:0) B - 121 5 (1:0) B - 123 5 (1:0) B - 131 5 (1:0) B - 141 5 (1:0) 5 Atmospheric pressure : 2.03×10 Pa (Reference value) Test duration : 20hr. Test temp. : +3 -5 Low temp. -40 High temp. 125 +5 -5 ℃ ℃ Number of cycles RT 5 ~ 35 ℃ : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles Test temp. : Dwell time 6 Thermal Shock High temp. 100 +0 -5 ℃ +5 -0 Low temp. 0 ℃ Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles MS5F5327 6 13 H04-004-03 Reliability Test Items Test categories Test items 1 High temperature Reverse Bias +0 Endurance Tests Test duration 2 High temperature Reverse Bias D - 313 5 (1:0) D - 323 5 (1:0) D - 322 5 (1:0) : Ta = 125 -5 ℃ (Tj ≦ 150 ℃) : VC = 0.8×VCES : Applied DC voltage to C-E VGE = 0V : 1000hr. Test temp. Bias Voltage Bias Method +0 : Ta = 125 -5 ℃ (Tj ≦ 150 ℃) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : 2 sec. : 18 sec. : Tj=100±5 deg Tj ≦ 150 ℃, Ta=25±5 ℃ Test temp. Bias Voltage Bias Method 3 Intermitted Operating Life (Power cycle) ( for IGBT ) Reference Acceptnorms Number ance EIAJ of sample number ED-4701 Test methods and conditions Test duration ON time OFF time Test temp. Number of cycles : 15000 cycles Failure Criteria Item Failure criteria Lower limit Upper limit Electrical Leakage current ICES USL×2 characteristic ±IGES USL×2 Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 Saturation voltage VCE(sat) USL×1.2 Forward voltage VF USL×1.2 VGE Thermal IGBT USL×1.2 or VCE resistance VF FWD USL×1.2 Visual inspection Characteristic Isolation voltage Visual inspection Peeling Plating and the others Symbol Unit Note mA A mA V V mV mV Viso Broken insulation - - The visual sample - LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. MS5F5327 7 13 H04-004-03 Reliability Test Results Test categories Test items 1 Terminal Strength (Pull test) Endurance Tests Environment Tests Mechanical Tests 2 Mounting Strength Reference Number Number norms of test of failure EIAJ ED-4701 sample sample A - 111 5 0 5 0 Method 1 A - 112 Method 2 3 Vibration A - 121 5 0 4 Shock A - 122 5 0 5 Solderabitlity A - 131 5 0 6 Resistance to Soldering Heat A - 132 5 0 1 High Temperature Storage B - 111 5 0 2 Low Temperature Storage B - 112 5 0 3 Temperature Humidity B - 121 5 0 B - 123 5 0 5 Temperature Cycle B - 131 5 0 6 Thermal Shock B - 141 5 0 1 High temperature Reverse Bias D - 313 5 0 2 High temperature Reverse Bias D - 323 5 0 D - 322 5 0 Storage 4 Unsaturated Pressure Cooker ( for gate ) 3 Intermitted Operating Life (Power cycling) ( for IGBT ) MS5F5327 8 13 H04-004-03 250 [ Inverter ] C olle ct or cur rent vs. Collector-Emitte r volt age Tj= 25℃ (ty p.) VGE= 20V 250 12V 15V [ A ] Ic [ A ] Coll ecto r cu rren t : 100 50 10V 150 100 10V 50 0 1 2 3 Col lect or - Emi tter vol tage 4 : VCE 5 0 [ V] [ Inverter ] C olle ct or cur rent vs. Collector-Emitte r volt age VGE=15V (typ.) 10 [ V] 250 Tj= 25℃ Tj= 125℃ 2 3 4 : VCE 5 [ V ] [ Inverter ] C ollector-Emitter voltage vs. Ga te-Emitter vo ltage Tj= 25℃ (ty p.) 8 : VCE [ A] 200 150 Col lect or - Emi tter vol tage 100 50 0 6 4 Ic=200A 2 Ic=100A Ic= 50A 0 1 2 3 Col lect or - Emi tter vol tage Capacitance : VCE 4 5 [ V] 10 15 20 Ga te - Emi tter vol tage VGE 25 [ V] [ Inverte r ] Dynamic G ate charge (typ.) Vcc=300V, Ic=100A, Tj= 25℃ [ I nverte r ] vs . Col lector -Emitt er voltage (typ.) VGE =0V, f= 1MHz , Tj= 25℃ [ V] 50 000 500 25 400 20 300 15 200 10 100 5 10 000 Col lect or - Emi tter vol tage : Cies VGE VCE [ pF ] : 5 000 1 000 Coes [ V] 0 : Ic 1 Col lect or - Emi tter vol tage Ga te - Emi tter vol tage Ic Coll ecto r cu rren t : 150 0 Coll ecto r cu rren t : 12V 200 0 : C ies, Coe s, C res 15V VGE= 20V 200 C apac itan ce [ Inv erter ] C olle ctor current vs. Collector-Emitte r voltage Tj= 125℃ (typ.) Cres 500 0 0 5 10 15 20 Col lect or - Emi tter vol tage 25 : VCE 30 [ V] 35 0 100 200 Gat e ch arge MS5F5327 300 : 400 Qg 500 0 600 [ nC ] 9 13 H04-004-03 [ Inverter ] Switching time vs. Collector curren t (typ .) Vcc=300V, VGE=±15V, Rg =24Ω, Tj= 25 ℃ tr [ n sec ] 100 0 tf : t on, t r, t off, tf [ n sec ] 100 0 ton toff : t on, t r, t off, tf [ I nverter ] Switchi ng tim e vs. Collector current (typ .) Vcc=300V, VGE =±15V , Rg= 24Ω, Tj= 125℃ tr 10 0 tf Swit chin g ti me Swit chin g ti me 10 0 ton toff 10 10 0 50 10 0 C olle ctor curr ent 15 0 : Ic 20 0 0 [ A ] [ Inverter ] Switching time vs. Gate resistanc e (typ .) Vcc=300V, Ic=100A , VGE= ±15V, Tj= 25 ℃ [ m J/pu lse ] toff tr Eo n, Eo ff, Err 10 0 Swit chin g ti me S witc hing los s : tf 10 10 20 0 [A ] Eon（125℃） Eoff（125℃） Eon（25℃） 6 Eoff（25℃） 4 2 Err（125℃） Err（25℃） 10 0 30 0 0 : Rg [ Ω ] 50 10 0 C olle ctor curr ent 15 0 : Ic 20 0 [A ] [ Inverter ] Reverse bias safe opera ting ar ea + VGE=15 V, -VGE≦15V, Rg≧24Ω, Tj≦125 ℃ 20 25 0 Eon 20 0 : Ic [ A ] 15 10 Coll ector cur rent [ m J/pu lse ] Ic 8 [ I nvert er ] Switching loss vs. G ate re sistan ce (typ .) Vcc=30 0V, Ic =100A, VGE=±15V, Tj= 125℃ Eo n, Eo ff, Err 15 0 : 0 Gate resi stan ce S witc hing los s : 10 0 [ I nverter ] Switching los s vs. Coll ector curren t (typ.) V cc=300 V, VGE =±15V , Rg=24Ω 10 ton : t on, t r, t off, tf [ n sec ] 500 0 100 0 50 C olle ctor curr ent Eoff 5 15 0 10 0 50 Err 0 0 10 10 0 Gate resi stan ce : Rg [ Ω ] 30 0 0 20 0 40 0 Coll ecto r - Emit ter v olta ge MS5F5327 60 0 : V CE 80 0 [V ] 10 13 H04-004-03 [ Inverte r ] Fo rward curren t vs. Forwar d on vol tage (typ.) 250 300 200 : Irr [ A ] tr r [ nse c ] Tj=125℃ [ A ] Tj=25℃ 150 trr（125℃） 100 Irr（125℃） trr（25℃） Reve rse reco very cur rent Reve rse reco very tim e : IF Fo rwar d cu rren t : [ Inverte r ] Reverse recovery cha ra cteris tics (typ.) Vcc= 300V, VGE=±15V, Rg=24Ω 100 50 0 Irr（25℃） 10 0 1 2 F orwa rd o n vo ltag e : VF 3 [ V] 0 50 100 Fo rwar d cu rren t : 150 IF 200 [ A] Transient therma l resistance 1 FWD IGBT T herma l re sist anse : Rth (j-c ) [ ℃/ W ] 5 0.1 0 .01 0. 001 0 .01 Puls e wi dth 0.1 : Pw 1 [ se c ] MS5F5327 11 13 H04-004-03 Warnings - This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。 絶対最大定格を超えて使用すると、素子が破壊する場合があります。 - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. 万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ 又はブレーカーを必ず付けて２次破壊を防いでください。 - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. 製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。 製品の信頼性寿命を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。 - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. 酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観などの保証は 致しかねます。 - Use this product within the power cycle curve (Technical Rep.No. : MT6M3947) 本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料No.: MT6M3947) - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. 主端子及び制御端子に応力を与えて変形させないで下さい。 端子の変形により、接触不良などを引き起こす場合 があります。 - According to the outline drawing, select proper length of screw for main terminal. Longer screws may break the case. 本製品に使用する主端子用のネジの長さは、外形図に従い正しく選定下さい。 ネジが長いとケースが破損する場合があります。 - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Improper handling may cause isolation breakdown and this may lead to a critical accident. 冷却フィンはネジ取り付け位置間で平坦度を100mmで100um以下、表面の粗さは10um以下にして下さい。 誤った取り扱 いをすると絶縁破壊を起こし、重大事故に発展する場合があります。 - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。 RBSOAの範囲を超えて使用すると素子が破壊する可能性があります。 - If excessive static electricity is applied to the control terminals, the devices can be broken. Implement some countermeasures against static electricity. 制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。 取り扱い時は静電気対策を実施して下さい。 MS5F5327 12 13 H04-004-03 Cautions - Fuji Electric is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. 富士電機は絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、 誤動作する場合があります。富士電機製半導体製品の故障または誤動作が、結果として人身事故・火災 等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計 など安全確保のための手段を講じて下さい。 - The application examples described in this specification only explain typical ones that used the Fuji Electric products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. 本仕様書に記載してある応用例は、富士電機製品を使用した代表的な応用例を説明するものであり、本仕様書 によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。 - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. 本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを 目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力 制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に 満足することをご確認の上、ご利用下さい。 If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd. MS5F5327 13 13 H04-004-03