SPECIFICATION Device Name : IGBT Module Type Name : 6MBI75UC-120 Spec. No. : MS5F 5350 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 10 ’03 Y.Kobayashi Jan. 10 ’03 T.Miyasaka T.Fujihira K.Yamada MS5F 5350 a 1 13 H04-004-07 Revised Records Date Classification Jan.-10-’03 enactment Jan.-31-’03 Revision Ind. Content Applied date Drawn Revised toff and tf characteristics(P4/13,10/13) Approved T.Miyasaka Issued date a Checked K.Yamada Y.Kobayashi MS5F 5350 T.Miyasaka K.Yamada T.Fujihira T.Fujihira a 2 13 H04-004-06 6MBI75UC-120 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit 15,16 31,32 1 2 27 28 R1 3 4 5 6 U 29,30 7 8 21 22 R2 9 10 V 23,24 17 18 R3 W 19,20 11 12 13,14 33,34 MS5F 5350 a 3 13 H04-004-03 3.Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified ） Items Symbols Conditions Maximum Ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Collector current Ic Continuous Icp 1ms Tc=25℃ 100 Tc=80℃ 75 Tc=25℃ 200 Tc=80℃ 150 -Ic 75 -Ic pluse Collector Power Dissipation Pc A 150 1 device 390 W Junction temperature Tj 150 Storage temperature Tstg -40～ +125 Isolation voltage between terminal and copper base *1 Viso Screw Torque Mounting *2 AC : 1min. - ℃ 2500 VAC 3.5 N・m (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : 2.5~3.5 Nm (M5) 4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified) Items Symbols Zero gate voltage Collector current ICES Gate-Emitter leakage current IGES Gate-Emitter threshold voltage VGE(th) Collector-Emitter saturation voltage VCE(sat) (chip) Input capacitance Cies ton Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip Shunt resistance Characteristics Conditions VGE = 0V VCE = 1200V VCE = 0V VGE=±20V VCE = 20V Ic = 75mA typ. max. - - 1.0 mA - - 200 nA 4.5 6.5 8.5 V VGE=15V Tj= 25℃ - 1.75 2.1 Ic = 75A Tj=125℃ - 2.00 - VCE=10V,VGE=0V,f=1MHz - 10 - Vcc = 600V - 0.36 1.20 Ic = 75A - 0.21 0.60 tr (i) VGE=±15V - 0.03 - toff Rg = 9.1 Ω - a 0.37 1.00 - a 0.07 0.30 tr tf VF (chip) Units min. VGE=0V Tj= 25℃ - 2.05 2.55 IF = 75A Tj=125℃ - 2.00 - V nF µs V ｔｒｒ R lead IF = 75A - - 0.35 µs Without shunt resistance - 5.7 - mΩ R shunt Resistance of R1 ,R2 ,R3 * - 2.4 - mΩ （*） Ｒ1,Ｒ2,Ｒ3 is shown in equivalent circuit(P3/13) MS5F 5350 a 4 13 H04-004-03 5. Thermal resistance characteristics Items Symbols Conditions min. Characteristics typ. max. Thermal resistance(1device) Rth(j-c) IGBT FWD - - 0.32 0.49 Contact Thermal resistance Rth(c-f) with Thermal Compound (※) - 0.05 - Units ℃/W ※ This is the value which is defined mounting on the additional cooling fin with thermal compound. 6. Indication on module 6MBI75UC-120 75A 1200V Lot.No. Place of manufacturing (code) 7.Applicable category This specification is applied to IGBT Module named 6MBI75UC-120 . 8.Storage and transportation notes ・ The module should be stored at a standard temperature of 5 to 35℃ and humidity of 45 to 75% . ・ Store modules in a place with few temperature changes in order to avoid condensation on the module surface. ・ Avoid exposure to corrosive gases and dust. ・ Avoid excessive external force on the module. ・ Store modules with unprocessed terminals. ・ Do not drop or otherwise shock the modules when transporting. ～ ～ 9. Definitions of switching time 90% 0V 0V V GE L trr Irr Ic 90% 10% 10% ～ ～ 0V 0A V CE Ic 90% Vcc RG ～ ～ VCE 10% VCE tr(i) V GE Ic tf tr toff ton 10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box MS5F 5350 5 a 13 H04-004-03 11. Reliability test results Reliability Test Items Test categories Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Mechanical Tests 3 Vibration 4 Shock 5 Solderabitlity 6 Resistance to Soldering Heat Environment Tests 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker 5 Temperature Cycle Reference Acceptnorms Number ance EIAJ of sample number ED-4701 Test methods and conditions Pull force : 20N Test time : 10±1 sec. Screw torque : 2.5 ~ 3.5 N･m (M5) Test time : 10±1 sec. Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 10G Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 1000G Pulse width : 0.5msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Solder temp. : 235±5 ℃ Immersion time : 5±1sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Solder temp. : 260±5 ℃ Immersion time : 10±1sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Storage temp. : 125±5 ℃ Test duration : 1000hr. Storage temp. : -40±5 ℃ Test duration : 1000hr. Storage temp. : 85±3 ℃ Relative humidity : 85±5% Test duration : 1000hr. Test temp. : 121 ℃ A - 111 Method 1 A - 112 Method 2 A - 121 5 (1:0) 5 (1:0) 5 (1:0) A - 122 5 (1:0) A - 131 5 (1:0) A - 132 5 (1:0) B - 111 5 (1:0) B - 112 5 (1:0) B - 121 5 (1:0) B - 123 5 (1:0) B - 131 5 (1:0) B - 141 5 (1:0) 5 Atmospheric pressure : 2.03×10 Pa (Reference value) Test duration : 20hr. +3 Test temp. : Low temp. -40 -5 ℃ High temp. 125 +5 -5 ℃ Number of cycles RT 5 ~ 35 ℃ : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles Test temp. : Dwell time 6 Thermal Shock High temp. 100 +0 -5 ℃ +5 -0 Low temp. 0 ℃ Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles MS5F 5350 6 a 13 H04-004-03 Reliability Test Items Test categories Test items Test methods and conditions 1 High temperature Reverse Bias +0 Test duration 2 High temperature Bias +0 Test duration : Ta = 125 -5 ℃ (Tj ≦ 150 ℃) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. Test temp. Relative humidity Bias Voltage Bias Method : : : : Test duration ON time OFF time Test temp. : : : : Test temp. Bias Voltage Bias Method 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycle) ( for IGBT ) D - 313 5 (1:0) D - 323 5 (1:0) B - 121 5 (1:0) D - 322 5 (1:0) : Ta = 125 -5 ℃ (Tj ≦ 150 ℃) : VC = 0.8×VCES : Applied DC voltage to C-E VGE = 0V : 1000hr. Test temp. Bias Voltage Bias Method Endurance Tests Reference Acceptnorms Number ance EIAJ of sample number ED-4701 Number of cycles : 85 +-3o C 85 +-5% VC = 0.8×VCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. ∆ Tj=100±5 deg Tj ≦ 150 ℃, Ta=25±5 ℃ 15000 cycles Failure Criteria Item Electrical characteristic Characteristic Leakage current Unit - USL×2 USL×2 mA Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA Saturation voltage VCE(sat) - USL×1.2 V VF - USL×1.2 USL×1.2 V mV - USL×1.2 mV resistance FWD Isolation voltage inspection Failure criteria Lower limit Upper limit ICES ±IGES Forward voltage Thermal IGBT Visual Symbol ∆ VGE or ∆ VCE ∆ VF Note µA Viso Broken insulation - - The visual sample - Visual inspection Peeling Plating and the others LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. MS5F 5350 7 a 13 H04-004-03 Reliability Test Results Endurance Tests Environment Tests Mechanical Tests Test categorie s Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Reference norms EIAJ ED4701 Number Number of of test failure sample sample A - 111 Method 1 A - 112 Method 2 A - 121 5 0 5 0 5 0 4 Shock A - 122 5 0 5 Solderabitlity A - 131 5 0 6 Resistance to Soldering Heat A - 132 5 0 1 High Temperature Storage B - 111 5 0 2 Low Temperature Storage B - 112 5 0 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker 5 Temperature Cycle B - 121 5 0 B - 123 5 0 B - 131 5 0 6 Thermal Shock B - 141 5 0 1 High temperature Reverse Bias D - 313 5 0 2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias D - 323 5 0 B - 121 5 0 4 Intermitted Operating Life (Power cycling) ( for IGBT ) D - 322 5 0 3 Vibration MS5F 5350 8 a 13 H04-004-03 Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage Tj= 25℃ / chip Tj= 125℃ / chip 200 VGE=20V 150 15V 12V 100 Collector current : Ic [A] Collector current : Ic [A] 200 10V VGE=20V 150 15V 12V 100 10V 50 50 8V 8V 0 0 0.0 1.0 2.0 3.0 4.0 0.0 5.0 Collector-Emitter voltage : VCE [V] 1.0 2.0 Collector current vs. Collector-Emitter voltage 5.0 Tj=25ﾟC / chip 200 Collector - Emitter voltage : VCE [ V ] 10.0 T j=25 ℃ Collector current : Ic [A] 4.0 Collector-Emitter voltage vs. Gate-Emitter voltage VGE=15V (typ.) / chip T j=125 ℃ 150 100 50 8.0 6.0 4.0 Ic=150A Ic=75A Ic=37.5A 2.0 0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 Collector-Emitter voltage : VCE [V] 10.0 15.0 20.0 25.0 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (ty p.) Dy namic Gate charge (typ .) VGE=0V, f= 1M Hz, Tj= 25℃ Vcc=600V， Ic=75A，Tj= 25℃ Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 100.0 Capacitance : Cies, Coes, Cres [ nF ] 3.0 Collector-Emitter voltage : VCE [V] Cies 10.0 Cres 1.0 Coes VGE VCE 0 0.1 0.0 10.0 20.0 Collector-Emitter voltage : VCE [V] 30.0 0 100 200 300 400 Gate charge : Qg [ nC ] MS5F 5350 a 9 13 H04-004-03 a a Switching time vs. Collector current (ty p .) Switching time vs. Collector current (ty p .) Vcc=600V, VGE=±15V, Rg=9.1Ω, Tj= 25 ℃ Vcc=600V, VGE=±15V, Rg=9.1Ω, Tj=125 ℃ 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 1000 t on t off tr 100 tf 1000 t off t on tr 100 tf 10 10 0 50 100 0 150 50 Collect or current : Ic [ A ] a 100 150 Collect or current : Ic [ A ] Switching time vs. Gate resistance (ty p .) Switching loss vs. Collector current (ty p .) Vcc=600V, Ic=75A, VGE=±15V, Tj= 25 ℃ Vcc=600V, VGE=±15V, Rg=9.1Ω 10000 15.0 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] Eoff(125 ℃ ) t on t off 1000 tr 100 tf Eon(125 ℃ ) 10.0 Eoff(25 ℃ ) Eon(25 ℃ ) 5.0 Err(125 ℃ ) Err(25 ℃ ) 10 0.0 1.0 10.0 100.0 1000.0 0 Gate resist ance : Rg [ Ω ] 50 100 150 Collect or current : Ic [ A ] Switching loss vs. Gate resistance (ty p .) Reverse bias safe op erating area Vcc=600V, Ic=75A, VGE=±15V, Tj= 125 ℃ +VGE=15V,-VGE≦ 15V, RG ≧ 9.1Ω ,T j≦ 125 ℃ 50.0 200 40.0 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon 30.0 20.0 Eoff 10.0 150 100 50 Err 0.0 0 1.0 10.0 100.0 Gate resistance : Rg [ Ω ] 1000.0 0 250 500 750 1000 1250 Collect or - Emit t er volt age : VCE [ V ] MS5F 5350 a 10 13 H04-004-03 Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) chip Vcc=600V, VGE=±15V, Rg=9.1Ω 1000 T j=25 ℃ Reverse recovery current : Irr [ A ] Reverse recovery t ime : t rr [ nsec ] Forward current : IF [ A ] 200 T j=125 ℃ 150 100 50 trr (125 ℃) trr (25 ℃) 100 Irr (125 ℃) Irr (25 ℃) 10 0 0.00 1.00 2.00 3.00 4.00 Forward on volt age : VF [ V ] 0 50 100 150 Forward current : IF [ A ] Transient thermal resistance T hermal resist anse : Rth(j-c) ℃/W [ ] 10.000 FWD 1.000 IGBT 0.100 0.010 0.001 0.001 0.010 0.100 1.000 Pulse widt h : Pw [ sec ] MS5F 5350 a 11 13 H04-004-03 Warnings - This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。 絶対最大定格を超えて使用すると、素子が破壊する場合があります。 - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. 万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ 又はブレーカーを必ず付けて２次破壊を防いでください。 - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. 製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。 製品の信頼性寿命を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。 - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. 酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観などの保証は 致しかねます。 - Use this product within the power cycle curve (Technical Rep.No. : MT5F12959) 本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料No.: MT5F12959) - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. 主端子及び制御端子に応力を与えて変形させないで下さい。 端子の変形により、接触不良などを引き起こす場合 があります。 - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Improper handling may cause isolation breakdown and this may lead to a critical accident. 冷却フィンはネジ取り付け位置間で平坦度を100mmで100um以下、表面の粗さは10um以下にして下さい。 誤った取り扱 いをすると絶縁破壊を起こし、重大事故に発展する場合があります。 - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。 RBSOAの範囲を超えて使用すると素子が破壊する可能性があります。 - If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. 制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。 取り扱い時は静電気対策を実施して下さい。 MS5F 5350 12 a 13 H04-004-03 Cautions - Fuji Electric is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. 富士電機は絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、 誤動作する場合があります。富士電機製半導体製品の故障または誤動作が、結果として人身事故・火災 等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計 など安全確保のための手段を講じて下さい。 - The application examples described in this specification only explain typical ones that used the Fuji Electric products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. 本仕様書に記載してある応用例は、富士電機製品を使用した代表的な応用例を説明するものであり、本仕様書 によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。 - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. 本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを 目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力 制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に 満足することをご確認の上、ご利用下さい。 If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd. MS5F 5350 a 13 13 H04-004-03