FUJI 6MBI75UB-120

SPECIFICATION
Device Name
:
IGBT Module
Type Name
:
6MBI75UB-120
Spec. No.
:
MS5F 5497
Fuji Electric Co.,Ltd.
Matsumoto Factory
Jun. 18 ’03 Y.Kobayashi
Jun. 18 ’03 T.Miyasaka T.Fujihira
K.Yamada
MS5F 5497
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H04-004-07
Revised Records
Date
Classification
Jun.- 18 -’03
enactment
Ind.
Content
Applied
date
Drawn
Issued
date
MS5F 5497
Checked
Approved
T.Miyasaka
T.Fujihira
K.Yamada
2
13
H04-004-06
6MBI75UB-120
1. Outline Drawing ( Unit : mm )
(
) shows reference dimension.
2. Equivalent circuit
16,17,18
30,31,32
1
2
5
6
U
27,28,29
3
4
20
9
10
V
24,25,26
7
8
19
W
21,22,23
11
12
33,34,35
13,14,15
MS5F 5497
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3.Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified )
Items
Symbols
Conditions
Maximum
Ratings
Units
Collector-Emitter voltage
VCES
1200
V
Gate-Emitter voltage
VGES
±20
100
V
Ic
Collector current
Icp
Continuous
1ms
Tc=25℃
Tc=80℃
75
Tc=25℃
200
150
Tc=80℃
-Ic
-Ic pulse
Pc
Collector Power Dissipation
A
75
1ms
1 device
150
390
W
Junction temperature
Tj
150
Storage temperature
Tstg
-40~ +125
Isolation
voltage
Screw
Torque
between terminal and copper base *1
Viso
between thermistor and others *2
Mounting
AC : 1min.
-
*3
℃
2500
VAC
3.5
N・m
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two termistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : 2.5~3.5 Nm (M5)
4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified)
Items
Zero gate voltage
Collector current
ICES
Gate-Emitter
leakage current
IGES
Gate-Emitter
threshold voltage
Inverter
Collector-Emitter
saturation voltage
Input capacitance
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip *
Thermistor
VGE(th)
Conditions
VGE = 0V
1.0
mA
-
-
200
nA
4.5
6.5
8.5
V
Tj=125℃
Tj= 25℃
-
2.05
2.30
1.75
2.40
2.10
Tj=125℃
VCE=10V,VGE=0V,f=1MHz
Vcc = 600V
-
2.00
8
0.36
1.20
nF
µs
VGE=±20V
VCE = 20V
Ic = 75mA
Ic = 75A
Tj= 25℃
Ic = 75A
VGE=±15V
V
-
0.21
-
0.03
0.37
0.60
1.00
-
0.07
1.90
2.00
0.30
2.20
-
IF = 75A
-
1.60
1.70
-
1.90
0.35
3.4
5000
mΩ
495
520
3375
3450
K
Rg = 9.1 Ω
tf
VF
(terminal)
VGE=0V
Tj= 25℃
Tj=125℃
VF
(chip)
IF = 75A
Tj= 25℃
Tj=125℃
trr
R lead
Units
-
VCE(sat)
(chip)
tr
tr (i)
toff
Characteristics
typ.
max.
-
VGE=15V
Cies
min.
VCE = 1200V
VCE = 0V
VCE(sat)
(terminal)
ton
Turn-on time
(*)
Symbols
Resistance
R
T = 25℃
T =100℃
465
B value
B
T = 25/50℃
3305
V
µs
Ω
Biggest internal terminal resistance among arm.
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5. Thermal resistance characteristics
Items
Symbols
Thermal resistance(1device)
Rth(j-c)
Contact Thermal resistance(1device)
Rth(c-f)
Conditions
min.
IGBT
FWD
with Thermal Compound (※)
Characteristics
typ.
max.
-
-
0.32
0.49
-
0.05
-
Units
℃/W
※ This is the value which is defined mounting on the additional cooling fin with thermal compound.
6. Indication on module
6MBI75UB-120
75A 1200V
Lot.No.
Place of manufacturing (code)
7.Applicable category
This specification is applied to IGBT Module named 6MBI75UB-120 .
8.Storage and transportation notes
・ The module should be stored at a standard temperature of 5 to 35℃ and humidity of 45 to 75% .
・ Store modules in a place with few temperature changes in order to avoid condensation on the module surface.
・ Avoid exposure to corrosive gases and dust.
・ Avoid excessive external force on the module.
・ Store modules with unprocessed terminals.
・ Do not drop or otherwise shock the modules when transporting.
~
~
9. Definitions of switching time
90%
0V
0V
V GE
L
trr
Irr
0V
0A
V CE
Ic
90%
Ic
90%
10%
10%
~
~
RG
~
~
VCE
Vcc
10%
VCE
tr(i)
V GE
Ic
tr
tf
toff
ton
10. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
MS5F 5497
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H04-004-03
11. Reliability test results
Reliability Test Items
Test
categories
Test items
Reference
Number Acceptnorms
of
ance
EIAJ ED-4701
sample number
Test methods and conditions
(Aug.-2001 edition)
1 Terminal Strength Pull force
(Pull test)
Test time
2 Mounting Strength Screw torque
Test time
:
:
:
:
20N
10±1 sec.
2.5 ~ 3.5 N・m (M5)
10±1 sec.
Environment Tests
Mechanical Tests
3 Vibration
Range of frequency : 10 ~ 500Hz
Sweeping time
: 15 min.
Acceleration
: 100m/s2
Sweeping direction : Each X,Y,Z axis
Test time
: 6 hr. (2hr./direction)
4 Shock
Maximum acceleration : 5000m/s2
Pulse width
: 1.0msec.
Direction
: Each X,Y,Z axis
Test time
: 3 times/direction
5 Solderabitlity
Solder temp.
: 235±5 ℃
Immersion time
: 5±0.5sec.
Test time
: 1 time
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
6 Resistance to
Solder temp.
: 260±5 ℃
Soldering Heat
Immersion time
: 10±1sec.
Test time
: 1 time
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
1 High Temperature Storage temp.
: 125±5 ℃
Storage
Test duration
: 1000hr.
2 Low Temperature Storage temp.
: -40±5 ℃
Storage
Test duration
: 1000hr.
3 Temperature
Storage temp.
: 85±2 ℃
Humidity
Relative humidity
: 85±5%
Storage
Test duration
: 1000hr.
4 Unsaturated
Test temp.
: 120±2 ℃
Pressure Cooker Atmospheric pressure : 1.7 × 105 Pa
Test humidity
: 85±5%
Test duration
: 96hr.
5 Temperature
Cycle
Test temp.
:
Low temp. -40±5 ℃
Test Method 401
MethodⅠ
Test Method 402
methodⅡ
5
(0:1)
5
(0:1)
Test Method 403
Reference 1
Condition code B
5
(0:1)
Test Method 404
Condition code B
5
(0:1)
Test Method 303
Condition code A
5
(0:1)
Test Method 302
Condition code A
5
(0:1)
Test Method 201
5
(0:1)
Test Method 202
5
(0:1)
Test Method 103
Test code C
5
(0:1)
Test Method 103
Test code E
5
(0:1)
Test Method 105
5
(0:1)
Test Method 307
method Ⅰ
Condition code A
5
(0:1)
High temp. 125 ±5 ℃
Number of cycles
RT 5 ~ 35 ℃
: High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
: 100 cycles
Test temp.
:
Dwell time
6 Thermal Shock
High temp. 100
+0
-5
+5
-0
℃
Low temp. 0 ℃
Used liquid : Water with ice and boiling water
Dipping time
: 5 min. par each temp.
Transfer time
: 10 sec.
Number of cycles
: 10 cycles
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Reliability Test Items
Test
categories
Test items
Test methods and conditions
(Aug.-2001 edition)
1 High temperature
Reverse Bias
Test temp.
Bias Voltage
Bias Method
Test duration
2 High temperature
Test temp.
Bias (for gate)
Endurance Tests
Reference
Number Acceptnorms
of
ance
EIAJ ED-4701
sample number
Test duration
: Ta = 125±5 ℃
(Tj ≦ 150 ℃)
: VC = VGE = +20V or -20V
: Applied DC voltage to G-E
VCE = 0V
: 1000hr.
Test temp.
Relative humidity
Bias Voltage
Bias Method
:
:
:
:
Test duration
ON time
OFF time
Test temp.
:
:
:
:
Number of cycles
:
Bias Voltage
Bias Method
3 Temperature
Humidity Bias
4 Intermitted
Operating Life
(Power cycle)
( for IGBT )
Test Method 101
5
(0:1)
Test Method 101
5
(0:1)
Test Method 102
Condition code C
5
(0:1)
Test Method 106
5
(0:1)
: Ta = 125±5 ℃
(Tj ≦ 150 ℃)
: VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
: 1000hr.
85±2 oC
85±5%
VC = 0.8×VCES
Applied DC voltage to C-E
VGE = 0V
1000hr.
2 sec.
18 sec.
∆ Tj=100±5 deg
Tj ≦ 150 ℃, Ta=25±5 ℃
15000 cycles
Failure Criteria
Item
Characteristic
Electrical
Leakage current
characteristic
Visual
inspection
Symbol
ICES
±IGES
Gate threshold voltage VGE(th)
Saturation voltage
VCE(sat)
Forward voltage
VF
Thermal
IGBT
∆ VGE
resistance
or ∆ VCE
FWD
∆ VF
Isolation voltage
Viso
Visual inspection
Peeling
Plating
and the others
Failure criteria
Unit
Lower limit Upper limit
-
USL×2
USL×2
LSL×0.8
-
USL×1.2
USL×1.2
USL×1.2
USL×1.2
mA
µA
mA
V
V
mV
USL×1.2
Broken insulation
mV
-
The visual sample
Note
-
LSL : Lower specified limit.
USL : Upper specified limit.
Note : Each parameter measurement read-outs shall be made after stabilizing the components
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.
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H04-004-03
Reliability Test Results
Test
categorie
s
Test items
Mechanical Tests
1 Terminal Strength
(Pull test)
2 Mounting Strength
Number
Reference
Number
of
norms
of test
failure
EIAJ ED-4701
sample
(Aug.-2001 edition)
sample
Test Method 401
5
0
5
0
MethodⅠ
Test Method 402
methodⅡ
3 Vibration
Test Method 403
5
0
4 Shock
Condition code B
Test Method 404
5
0
5
0
Condition code B
5 Solderabitlity
Test Method 303
Environment Tests
Condition code A
6 Resistance to Soldering Heat
Test Method 302
5
0
1 High Temperature Storage
Condition code A
Test Method 201
5
0
2 Low Temperature Storage
Test Method 202
5
0
3 Temperature Humidity
Storage
4 Unsaturated
Pressure Cooker
5 Temperature Cycle
Test Method 103
5
0
5
0
Test Method 105
5
0
6 Thermal Shock
Test Method 307
5
0
1 High temperature Reverse Bias Test Method 101
5
0
Test Method 101
5
0
Test Method 102
5
0
5
0
Test code C
Test Method 103
Test code E
method Ⅰ
Endurance Tests
Condition code A
2 High temperature Bias
( for gate )
3 Temperature Humidity Bias
Condition code C
4 Intermitted Operating Life
(Power cycling)
( for IGBT )
Test Method 106
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Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25℃ / chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125℃ / chip
200
200
15V
VGE=20V
12V
Collector current : Ic [A]
Collector current : Ic [A]
VGE=20V
150
100
10V
15V
12V
150
100
10V
50
50
8V
8V
0
0
0
1
2
3
4
0
5
Collector-Emitter voltage : VCE [V]
1
2
Collector current vs. Collector-Emitter voltage (typ.)
5
Tj=25゚C / chip
200
10
Tj=25℃
150
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [A]
4
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=15V / chip
Tj=125℃
100
50
8
6
4
Ic=150A
Ic=75A
Ic= 37.5A
2
0
0
0
1
2
3
4
5
5
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25℃
Cies
Cres
1.0
15
Coes
10
20
Collector-Emitter voltage : VCE [V]
25
VGE
VCE
0
0.1
0
20
Dynamic Gate charge (typ.)
Vcc=600V, Ic=75A,Tj= 25℃
Collector-Emitter voltage : VCE [ 200V/div ]
Gate - Emitter voltage : VGE
[ 5V/div ]
100.0
10.0
10
Gate - Emitter voltage : VGE [ V ]
Collector-Emitter voltage : VCE [V]
Capacitance : Cies, Coes, Cres [ nF ]
3
Collector-Emitter voltage : VCE [V]
30
0
100
200
300
400
Gate charge : Qg [ nC ]
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Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=9.1Ω, Tj= 25℃
Vcc=600V, VGE=±15V, Rg=9.1Ω, Tj=125℃
10000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
10000
1000
ton
toff
tr
100
tf
1000
toff
ton
tr
100
tf
10
10
0
50
100
0
150
50
Collector current : Ic [ A ]
Vcc=600V, VGE=±15V, Rg=9.1Ω
10000
15
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
150
Switching loss vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=75A, VGE=±15V, Tj= 25℃
ton
toff
1000
tr
100
tf
Eoff(125℃)
Eon(125℃)
10
Eoff(25℃)
Eon(25℃)
5
Err(125℃)
Err(25℃)
10
0
1
10
100
1000
0
25
50
75
100
125
150
Collector current : Ic [ A ]
Gate resistance : Rg [ Ω ]
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area (max.)
Vcc=600V, Ic=75A, VGE=±15V, Tj= 125℃
+VGE=15V,-VGE≦15V, RG≧9.1Ω ,Tj≦125℃
75
200
Eon
Collector current : Ic [ A ]
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
100
Collector current : Ic [ A ]
50
25
Eoff
Err
0
1
10
100
Gate resistance : Rg [ Ω ]
150
100
50
0
1000
0
400
800
1200
Collector - Emitter voltage : VCE [ V ]
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Forward current vs. Forward on voltage (typ.)
chip
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=9.1Ω
1000
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
Forward current : IF [ A ]
200
Tj=25℃
150
Tj=125℃
100
50
100
10
0
0
1
2
3
0
4
Forward on voltage : VF [ V ]
50
100
150
Forward current : IF [ A ]
Temperature characteristic (typ.)
Transient thermal resistance (max.)
100
1.00
FWD
IGBT
Resistance : R [ kΩ ]
Thermal resistanse : Rth(j-c) [℃/W ]
trr (125℃)
trr (25℃)
Irr (125℃)
Irr (25℃)
0.10
0.01
0.001
10
1
0.1
0.010
0.100
Pulse width : Pw [ sec ]
1.000
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
Temperature [℃ ]
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Warnings
- This product shall be used within its absolute maximum rating (voltage, current, and temperature).
This product may be broken in case of using beyond the ratings.
製品の絶対最大定格(電圧,電流,温度等)の範囲内で御使用下さい。
絶対最大定格を超えて使用すると、素子が破壊する場合があります。
- Connect adequate fuse or protector of circuit between three-phase line and
this product to prevent the equipment from causing secondary destruction.
万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ
又はブレーカーを必ず付けて2次破壊を防いでください。
- Use this product after realizing enough working on environment and considering of product's reliability life.
This product may be broken before target life of the system in case of using beyond the product's reliability life.
製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。
製品の信頼性寿命を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。
- If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,
sulfurous acid gas), the product's performance and appearance can not be ensured easily.
酸・有機物・腐食性ガス(硫化水素,亜硫酸ガス等)を含む環境下で使用された場合、製品機能・外観などの保証は
致しかねます。
- Use this product within the power cycle curve (Technical Rep.No. : MT5F12959)
本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料No.: MT5F12959)
- Never add mechanical stress to deform the main or control terminal.
The deformed terminal may cause poor contact problem.
主端子及び制御端子に応力を与えて変形させないで下さい。 端子の変形により、接触不良などを引き起こす場合
があります。
- Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the
roughness within 10um. Also keep the tightening torque within the limits of this specification.
Improper handling may cause isolation breakdown and this may lead to a critical accident.
冷却フィンはネジ取り付け位置間で平坦度を100mmで100um以下、表面の粗さは10um以下にして下さい。 誤った取り扱
いをすると絶縁破壊を起こし、重大事故に発展する場合があります。
- It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA
specification. This product may be broken if the locus is out of the RBSOA.
ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。
RBSOAの範囲を超えて使用すると素子が破壊する可能性があります。
- If excessive static electricity is applied to the control terminals, the devices may be broken.
Implement some countermeasures against static electricity.
制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。
取り扱い時は静電気対策を実施して下さい。
- Never add the excessive mechanical stress to the main or control terminals
when the product is applied to equipments. The module structure may be broken.
素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。
端子構造が破壊する可能性があります。
- In case of insufficient -VGE, erroneous turn-on of IGBT may occur.
-VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V)
逆バイアスゲート電圧-VGEが不足しますと誤点弧を起こす可能性があります。
誤点弧を起こさない為に-VGEは十分な値で設定して下さい。 (推奨値 : -VGE = -15V)
- In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur.
Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction.
ターンオン dv/dt が高いと対抗アームのIGBTが誤点弧を起こす可能性があります。
誤点弧を起こさない為の最適なドライブ条件(+VGE, -VGE, RG等)でご使用下さい。
- This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between
C-E terminals. Use this product within its absolute maximum voltage.
VCESを超えた電圧が印加された場合、アバランシェを起こして素子破壊する場合があります。
VCEは必ず絶対定格の範囲内でご使用下さい。
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Cautions
- Fuji Electric is constantly making every endeavor to improve the product quality and reliability. However,
semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or
death, damage to property like by fire, and other social damage resulted from a failure or malfunction of
the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design,
spread-fire-preventive design, and malfunction-protective design.
富士電機は絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、
誤動作する場合があります。富士電機製半導体製品の故障または誤動作が、結果として人身事故・火災
等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計
など安全確保のための手段を講じて下さい。
- The application examples described in this specification only explain typical ones that used the Fuji Electric
products. This specification never ensure to enforce the industrial property and other rights, nor license the
enforcement rights.
本仕様書に記載してある応用例は、富士電機製品を使用した代表的な応用例を説明するものであり、本仕様書
によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。
- The product described in this specification is not designed nor made for being applied to the equipment or
systems used under life-threatening situations. When you consider applying the product of this specification
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,
atomic control systems and submarine relaying equipment or systems, please apply after confirmation
of this product to be satisfied about system construction and required reliability.
本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを
目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力
制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に
満足することをご確認の上、ご利用下さい。
If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd.
MS5F 5497
13
13
H04-004-03