2729-170R4 2729-170 170 Watts, 38 Volts, 100µs, 10% Radar 2700-2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55KS-1 Common Base The 2729-170 is an internally matched, COMMON BASE bipolar transistor capable of providing 170 Watts of pulsed RF output power at 100µs pulse width, 10% duty factor across the 2700 to 2900 MHz band. The transistor prematch and test fixture has been optimized through the use of Pulsed Automated Load Pull. This hermetically solder-sealed transistor is specifically designed for S-band radar applications. It utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation 570 W Device Dissipation @ 25°C1 Maximum Voltage and Current Collector to Base Voltage (BVces) 65 Emitter to Base Voltage (BVebo) 3.0 Collector Current (Ic) 17 A Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 V V °C °C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL CHARACTERISTICS Pout Pin Pg ηc VSWR Power Output Power Input Power Gain Collector Efficiency Load Mismatch Tolerance1 TEST CONDITIONS MIN F=2700-2900 MHz Vcc = 38 Volts Pulse Width = 100 µs Duty Factor = 10% F = 2900 MHz, Po = 170 W 170 TYP MAX 25.7 8.2 52 8.6 60 UNITS W W dB % 2:1 FUNCTIONAL CHARACTERISTICS @ 25°C Emitter to Base Breakdown Emitter to Base Leakage Collector to Emitter Breakdown Collector to Emitter Leakage DC – Current Gain Thermal Resistance BVebo Iebo BVces Ices hFE θjc 1 NOTE: Ie = 30 mA Veb = 1.5 V Ic = 120 mA Vce = 36 V Vce = 5V, Ic = 600 mA 3.0 7 V mA V mA 0.30 °C/W 2 56 18 65 50 1. At rated output power and pulse conditions Issue April 2005 MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 2729-170R4 2729-170 Vcc = 38 Volts, Pulse Width = 100µs, Duty = 10 % G2754-2, Product is in characterization, additional curves will be inserted at the conclusion. Pout vs. Pin Efficiency vs Power Out 200.0 Power Gain vs Power Out 70.0 9 180.0 8 60.0 160.0 7 50.0 2.7GHz 100.0 2.8GHz 2.9GHz 80.0 60.0 Gain (dB) 6 120.0 Efficiency (%) Pout (W) 140.0 2.7GHz 40.0 2.8GHz 2.9GHz 30.0 2.7GHz 5 2.8GHz 4 2.9GHz 3 20.0 2 40.0 10.0 1 20.0 0.0 0.0 0.0 10.0 20.0 0 0.0 30.0 50.0 100.0 150.0 200.0 0.0 Power Output (W) Pin (W) 50.0 100.0 150.0 200.0 Pout (W) Input and Load Impedance Load Impedance vs Frequency Input Impedance vs Frequency 4 10 Rin 5 jXin 0 2.7 2.75 2.8 2.85 -5 Frequency - GHz 2.9 Zload = Rl + jXl Zin = Rin + jXin 15 2 Rl 0 -2 2.7 2.75 2.8 2.85 2.9 jXl -4 -6 Frequency - GHz Note: Z in is looking into the transistor input, Z Load is looking into the Output Circuit. MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 2729-170R4 2729-170 Broadband Test Circuit – Destination F1 F2 F3 F4 D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 W (Mil) 51 51 51 51 51 250 51 314 96 827 965 51 166 51 L (Mil) 115 395 630 50 424 107 284 410 91 177 295 110 125 100 Destination D11 D12 D13 W (Mil) 274 51 51 Duroid 6002, 20Mil, 1Oz Cu List of component Destination Value C1 10pF C2 1000pF C3 10000pF C4 10000pF C5 10000pF C6 2200uF C7 47uF R 2.5 ohms (may needed) L (Mil) 160 336 324 Size A B B B B Electrolytic Electrolytic Fix 2729-170 MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 2729-170R4 MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.