10502 500 Watts, 50 Volts, Pulsed Avionics 1030 / 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55SM Common Base The 10502 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030/1090 MHz, with the pulse width and duty required for MODE-S &TCAS applications. The device has gold thinfilm metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25oC1 Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 1458 Watts 65 Volts 3.5 Volts 40 Amps - 65 to + 200oC + 230oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS POUT PIN PG Output Power Input Power Power Gain ηc Collector Efficiency RL Return Loss TEST CONDITIONS 1 MIN MAX UNITS 70 F = 1030/1090 MHz VCC = 50 Volts 500 PW = 32 μsec, DF = 2% 8.5 W W dB 40 % 10 dB VSWR Load Mismatch Tolerance F = 1090 MHz 10:1 BVEBO BVCES ICBO hFE Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Base Leakage DC - Current Gain Thermal Resistance Ie = 15 mA Ic = 60 mA VCB = 36V Ic = 5 A, Vce = 5 V 3.5 65 θjc Note 1: At rated output power and pulse conditions 1 TYP 25 Volts Volts mA 20 0.12 o C/W Rev. C: August 2010 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 10502 SAMPLE DEVICE (Pout vs Pin) 700 600 Pout(W) 500 400 300 200 100 0 0 10 20 30 40 50 60 70 80 90 100 80 90 100 Pin(W) 1030MHz 1090MHz 10502 SAMPLE DEVICE (Effic vs Pin) 65.0 60.0 55.0 Effic(%) 50.0 45.0 40.0 35.0 30.0 25.0 20.0 0 10 20 30 40 50 60 70 Pin(W) 1030MHz 1090MHz Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.