Rev.3.0_02 HIGH RIPPLE-REJECTION AND LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR S-1170 Series The S-1170 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology. A built-in low on-resistance transistor provides a low dropout voltage and large output current, a built-in overcurrent protector prevents the load current from exceeding the current capacitance of the output transistor, and a built-in thermal shutdown circuit prevents damage caused by the heat. An ON/OFF circuit ensures a long battery life. Compared with the voltage regulators using the conventional CMOS process, a larger variety of capacitors are available, including small ceramic capacitors. Small SOT-89-5 and 6-Pin HSON(A) packages realize high-density mounting. Features • Output voltage: • High-accuracy output voltage: • Low dropout voltage: • Low current consumption: 1.5 V to 5.5 V, selectable in 0.1 V steps. ±1.0% 120 mV typ. (3.0 V output product, IOUT = 300 mA) During operation: 80 µA typ., 160 µA max. During shutdown: 0.1 µA typ., 1.0 µA max. • High current capability: 800 mA output is possible (at VIN ≥ VOUT(S) + 1.0 V)*1 Ensures long battery life. • Built-in ON/OFF circuit: • Low ESR capacitor can be used: A ceramic capacitor of 4.7 µF or more can be used for the output capacitor. 70 dB typ. (at 1.0 kHz) • High ripple rejection: Overcurrent of output transistor can be restricted. • Built-in overcurrent protector: • Built-in thermal shutdown circuit: Damage caused by heat can be prevented. SOT-89-5, 6-Pin HSON(A) • Small package: • Lead-free products *1. Attention should be paid to the power dissipation of the package when the output current is large. Applications • Power supply for DVD and CD-ROM drives • Power supply for battery-powered devices • Power supply for personal communication device • Power supply for note PCs Packages Package Name SOT-89-5 6-Pin HSON(A) Package UP005-A PD006-A Drawing Code Tape UP005-A PD006-A Seiko Instruments Inc. Reel UP005-A PD006-A 1 HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series Block Diagram *1 VOUT VIN Overcurrent protector Thermal shutdown circuit ON/OFF circuit ON/OFF + − Reference voltage circuit VSS *1. Parasitic diode Figure 1 2 Seiko Instruments Inc. HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series Product Name Structure • The product types, output voltage, and package types for the S-1170 Series can be selected at the user’s request. Refer to the “Product name” for the meanings of the characters in the product name and “Product name list” for the full product names. 1. Product name S-1170 x xx xx – xxx TF G IC direction in tape specifications*1 Product abbreviation*2 Package abbreviation UC: SOT-89-5 PD: 6-Pin HSON(A) Output voltage 15 to 55 (E.g., when the output voltage is 1.5 V, it is expressed as 15.) Product type*3 A: ON/OFF pin negative logic B: ON/OFF pin positive logic *1. Refer to the taping specifications at the end of this book. *2. Refer to the product name list. *3. Refer to 3. Shutdown pin (ON/OFF pin) in the “ Operation”. Seiko Instruments Inc. 3 HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series 2. Product name list Table 1 Output Voltage SOT-89-5 6-Pin HSON(A) S-1170B15UC-OTATFG S-1170B15PD-OTATFG 1.5 V ±1.0% S-1170B16UC-OTBTFG S-1170B16PD-OTBTFG 1.6 V ±1.0% S-1170B17UC-OTCTFG S-1170B17PD-OTCTFG 1.7 V ±1.0% S-1170B18UC-OTDTFG S-1170B18PD-OTDTFG 1.8 V ±1.0% S-1170B19UC-OTETFG S-1170B19PD-OTETFG 1.9 V ±1.0% S-1170B20UC-OTFTFG S-1170B20PD-OTFTFG 2.0 V ±1.0% S-1170B21UC-OTGTFG S-1170B21PD-OTGTFG 2.1 V ±1.0% S-1170B22UC-OTHTFG S-1170B22PD-OTHTFG 2.2 V ±1.0% S-1170B23UC-OTITFG S-1170B23PD-OTITFG 2.3 V ±1.0% S-1170B24UC-OTJTFG S-1170B24PD-OTJTFG 2.4 V ±1.0% S-1170B25UC-OTKTFG S-1170B25PD-OTKTFG 2.5 V ±1.0% S-1170B26UC-OTLTFG S-1170B26PD-OTLTFG 2.6 V ±1.0% S-1170B27UC-OTMTFG S-1170B27PD-OTMTFG 2.7 V ±1.0% S-1170B28UC-OTNTFG S-1170B28PD-OTNTFG 2.8 V ±1.0% S-1170B29UC-OTOTFG S-1170B29PD-OTOTFG 2.9 V ±1.0% S-1170B30UC-OTPTFG S-1170B30PD-OTPTFG 3.0 V ±1.0% S-1170B31UC-OTQTFG S-1170B31PD-OTQTFG 3.1 V ±1.0% S-1170B32UC-OTRTFG S-1170B32PD-OTRTFG 3.2 V ±1.0% S-1170B33UC-OTSTFG S-1170B33PD-OTSTFG 3.3 V ±1.0% S-1170B34UC-OTTTFG S-1170B34PD-OTTTFG 3.4 V ±1.0% S-1170B35UC-OTUTFG S-1170B35PD-OTUTFG 3.5 V ±1.0% S-1170B36UC-OTVTFG S-1170B36PD-OTVTFG 3.6 V ±1.0% S-1170B37UC-OTWTFG S-1170B37PD-OTWTFG 3.7 V ±1.0% S-1170B38UC-OTXTFG S-1170B38PD-OTXTFG 3.8 V ±1.0% S-1170B39UC-OTYTFG S-1170B39PD-OTYTFG 3.9 V ±1.0% S-1170B40UC-OTZTFG S-1170B40PD-OTZTFG 4.0 V ±1.0% S-1170B41UC-OUATFG S-1170B41PD-OUATFG 4.1 V ±1.0% S-1170B42UC-OUBTFG S-1170B42PD-OUBTFG 4.2 V ±1.0% S-1170B43UC-OUCTFG S-1170B43PD-OUCTFG 4.3 V ±1.0% S-1170B44UC-OUDTFG S-1170B44PD-OUDTFG 4.4 V ±1.0% S-1170B45UC-OUETFG S-1170B45PD-OUETFG 4.5 V ±1.0% S-1170B46UC-OUFTFG S-1170B46PD-OUFTFG 4.6 V ±1.0% S-1170B47UC-OUGTFG S-1170B47PD-OUGTFG 4.7 V ±1.0% S-1170B48UC-OUHTFG S-1170B48PD-OUHTFG 4.8 V ±1.0% S-1170B49UC-OUITFG S-1170B49PD-OUITFG 4.9 V ±1.0% S-1170B50UC-OUJTFG S-1170B50PD-OUJTFG 5.0 V ±1.0% S-1170B51UC-OUKTFG S-1170B51PD-OUKTFG 5.1 V ±1.0% S-1170B52UC-OULTFG S-1170B52PD-OULTFG 5.2 V ±1.0% S-1170B53UC-OUMTFG S-1170B53PD-OUMTFG 5.3 V ±1.0% S-1170B54UC-OUNTFG S-1170B54PD-OUNTFG 5.4 V ±1.0% S-1170B55UC-OUOTFG S-1170B55PD-OUOTFG 5.5 V ±1.0% Remark Please contact the SII marketing department for products with an output voltage other than those specified above or type A products. 4 Seiko Instruments Inc. HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series Pin Configuration Table 2 SOT-89-5 Top view 5 4 *1. 1 2 Pin No. Symbol Description 1 ON/OFF Shutdown pin 2 VSS GND pin No connection 3 NC*1 4 VIN Input voltage pin 5 VOUT Output voltage pin The NC pin is electrically open. The NC pin can be connected to VIN and VSS. 3 Figure 2 Table 3 6-Pin HSON(A) Top view 6 5 4 1 2 3 Bottom view 1 2 3 *1 *1. *2. Pin No. Symbol 1 VOUT*1 2 VOUT*1 3 ON/OFF 4 VSS 5 VIN*2 6 VIN*2 Short pins 1 and 2. Short pins 5 and 6. Description Output voltage pin Output voltage pin Shutdown pin GND pin Input voltage pin Input voltage pin *2 6 *1. 5 4 Connect the exposed thermal die pad at shadowed area to the board, and set electric potential open or VSS. However, do not use it as the function of electrode. *2. Be careful of the contact with other wires because the pinch lead has the same electric potential as VSS. Figure 3 Seiko Instruments Inc. 5 HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series Absolute Maximum Ratings Table 4 Parameter Input voltage Output voltage Power SOT-89-5 dissipation 6-Pin HSON(A) Operating ambient temperature Storage temperature Symbol VIN VON/OFF VOUT (Ta = 25°C unless otherwise specified) Absolute Maximum Rating Unit V VSS − 0.3 to VSS + 7 V VSS − 0.3 to VIN + 0.3 V VSS − 0.3 to VIN + 0.3 PD 1000 *1 mW Topr Tstg −40 to +85 −40 to +125 °C °C *1. At mounted on printed circuit board [Mounted board] (1) Board size : 40 mm×40 mm×t1.6 mm (2) Cu wiring shear : 180 % at both sides Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. 1200 SOT-89-5 6-Pin HSON(A) 1000 800 Power Dissipation 600 PD (mW) 400 200 0 0 50 100 150 Ambient Temperature Ta (°C) Figure 4 Power Dissipation of Package (Mounted on Printed Circuit Board) Caution Thermal shutdown circuit may operate when junction temperature is 150 °C. 6 Seiko Instruments Inc. HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series Electrical Characteristics Table 5 (Ta = 25°C unless otherwise specified) Parameter Output voltage*1 *2 Output current Dropout voltage*3 Symbol VOUT(E) IOUT Vdrop Line regulation ∆VOUT1 ∆VIN•VOUT Load regulation ∆VOUT2 Output voltage *4 temperature coefficient Current consumption during operation Current consumption during shutdown Input voltage Shutdown pin input voltage “H” Shutdown pin input voltage “L” Shutdown pin input current “H” Shutdown pin input current “L” Ripple rejection Short-circuit current Thermal shutdown detection temperature Thermal shutdown release temperature ∆VOUT ∆Ta•VOUT Conditions VIN = VOUT(S) + 1.0 V, IOUT = 100 mA VIN ≥ VOUT(S) + 1.0 V IOUT = 300 mA VOUT(S) = 1.5 V VOUT(S) = 1.6 V VOUT(S) = 1.7 V 1.8 V ≤ VOUT(S) ≤ 2.0 V 2.1 V ≤ VOUT(S) ≤ 2.9 V 3.0 V ≤ VOUT(S) ≤ 5.5 V VOUT(S) + 0.5 V ≤ VIN ≤ 6.5 V, IOUT = 100 mA VIN = VOUT(S) + 1.0 V, 1.0 mA ≤ IOUT ≤ 300 mA VIN = VOUT(S) + 1.0 V, IOUT = 10 mA, −40°C ≤ Ta ≤ 85°C Unit Test Circuit V 1 mA V V V V V V 3 1 1 1 1 1 1 0.3 %/V 1 30 100 mV 1 ±150 ppm / °C 1 80 160 µA 2 Min. Typ. Max. VOUT(S) × 0.99 800*5 VOUT(S) 0.35 0.30 0.25 0.20 0.15 0.12 VOUT(S) × 1.01 0.45 0.35 0.30 0.26 0.22 0.18 0.05 0.1 1.0 µA 2 VIN VIN = VOUT(S) + 1.0 V, ON/OFF pin = ON, no load VIN = VOUT(S) + 1.0 V, ON/OFF pin = OFF, no load 2.0 6.5 V VSH VIN = VOUT(S) + 1.0 V, RL = 1.0 kΩ 1.5 V 4 VSL VIN = VOUT(S) + 1.0 V, RL = 1.0 kΩ 0.3 V 4 ISH VIN = 6.5 V, VON/OFF = 6.5 V −0.1 0.1 µA 4 ISL VIN = 6.5 V, VON/OFF = 0 V −0.1 0.1 µA 4 RR VIN = VOUT(S) + 1.0 V, f = 1.0 kHz, ∆Vrip = 0.5 Vrms, IOUT = 100 mA 1.5 V ≤ VOUT(S) ≤ 3.0 V 70 dB 5 3.1 V ≤ VOUT(S) ≤ 5.5 V 65 dB 5 ISS1 ISS2 Ishort VIN = VOUT(S) + 1.0 V, ON/OFF pin = ON, VOUT = 0 V 350 mA 3 TSD Junction temperature 150 °C TSR Junction temperature 120 °C Seiko Instruments Inc. 7 HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series *1. VOUT(S): Specified output voltage VOUT(E): Actual output voltage at the fixed load The output voltage when fixing IOUT(= 100 mA) and inputting VOUT(S) + 1.0 V *2. The output current at which the output voltage becomes 95% of VOUT(E) after gradually increasing the output current. *3. Vdrop = VIN1 − (VOUT3 × 0.98) VOUT3 is the output voltage when VIN = VOUT(S) + 1.0 V and IOUT = 300 mA. VIN1 is the input voltage at which the output voltage becomes 98% of VOUT3 after gradually decreasing the input voltage. *4. The change in temperature [mV/°C] is calculated using the following equation. ∆VOUT [mV / °C]*1 = VOUT(S)[ V ]*2 × ∆VOUT [ppm / °C]*3 ÷ 1000 ∆Ta ∆Ta • VOUT *1. The change in temperature of the output voltage *2. Specified output voltage *3. Output voltage temperature coefficient *5. The output current can be at least this value. Due to restrictions on the package power dissipation, this value may not be satisfied. Attention should be paid to the power dissipation of the package when the output current is large. This specification is guaranteed by design. 8 Seiko Instruments Inc. HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series Test Circuits 1. + VOUT VIN ON/OFF V VSS A + Set to power ON Figure 5 2. + A VIN ON/OFF VOUT VSS Set to VIN or GND Figure 6 3. VIN VOUT ON/OFF + A V VSS + Set to power ON Figure 7 4. VIN + VOUT + A ON/OFF VSS V RL Figure 8 5. VIN VOUT + ON/OFF VSS V RL Set to Power ON Figure 9 Seiko Instruments Inc. 9 HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series Standard Circuit Output Input VIN CIN VOUT ON/OFF VSS *1 Single GND *2 CL GND *1. CIN is a capacitor for stabilizing the input. *2. A ceramic capacitor of 4.7 µF or more can be used for CL. Figure 10 Caution The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. Application Conditions Input capacitor (CIN): Output capacitor (CL): ESR of output capacitor: 4.7 µF or more 4.7 µF or more 0.5 Ω or less Caution A general series regulator may oscillate, depending on the external components selected. Check that no oscillation occurs with the application using the above capacitor. Selection of Input and Output Capacitors (CIN, CL) The S-1170 Series requires an output capacitor between the VOUT and VSS pins for phase compensation. A ceramic capacitor with a capacitance of 4.7 µF or more provides a stable operation in all temperature ranges. When using an OS capacitor, tantalum capacitor, or aluminum electrolytic capacitor, a ceramic capacitor with a capacitance of 4.7 µF or more and an ESR of 0.5 Ω or less is required. The output overshoot and undershoot values, which are transient response characteristics, vary depending on the output capacitor value. The required capacitance value for the input capacitor differs depending on the application. The recommended application values are, CIN = 4.7 µF or more and CL = 4.7 µF or more, however, perform a thorough evaluation using the actual device, including evaluation of temperature characteristics. 10 Seiko Instruments Inc. HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series Explanation of Terms 1. Low dropout voltage regulator The low dropout voltage regulator is a voltage regulator whose dropout voltage is low due to its built-in low on-resistance transistor. 2. Low ESR A capacitor whose ESR (Equivalent Series Resistance) is low. The S-1170 Series enables use of a low ESR capacitor, such as a ceramic capacitor, for the output-side capacitor CL. A capacitor whose ESR is 0.5 Ω or less can be used. 3. Output voltage (VOUT) The accuracy of the output voltage is ensured at ±1.0% under the specified conditions of fixed input voltage*1, fixed output current, and fixed temperature. *1. Differs depending the product. Caution If the above conditions change, the output voltage value may vary and exceed the accuracy range of the output voltage. Please see the electrical characteristics and attached characteristics data for details. ∆VOUT1 ∆V IN • VOUT 4. Line regulation Indicates the dependency of the output voltage on the input voltage. That is, the values show how much the output voltage changes due to a change in the input voltage with the output current remaining unchanged. 5. Load regulation (∆VOUT2) Indicates the dependency of the output voltage on the output current. That is, the values show how much the output voltage changes due to a change in the output current with the input voltage remaining unchanged. 6. Dropout voltage (Vdrop) Indicates the difference between the input voltage VIN1, which is the input voltage (VIN) at the point where the output voltage has fallen to 98% of the output voltage value VOUT3 after VIN was gradually decreased from VIN = VOUT(S) + 1.0 V, and the output voltage at that point (VOUT3 × 0.98). Vdrop = VIN1 − (VOUT3 × 0.98) Seiko Instruments Inc. 11 HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series ∆VOUT 7. Temperatur e coefficient of output voltage ∆Ta • VOUT The shadowed area in Figure 11 is the range where VOUT varies in the operating temperature range when the temperature coefficient of the output voltage is ±150 ppm/°C. Ex. S-1170B28 Typ. VOUT [V] +0.42 mV / °C VOUT(E)*1 −0.42 mV / °C −40 25 85 Ta [°C] *1. VOUT(E) is the value of the output voltage measured at 25°C. Figure 11 A change in the temperature of the output voltage [mV/°C] is calculated using the following equation. ∆VOUT [mV / °C]*1 = VOUT(S)[ V ]*2 × ∆VOUT [ppm / °C]*3 ÷ 1000 ∆Ta • VOUT ∆Ta *1. Change in temperature of output voltage *2. Specified output voltage *3. Output voltage temperature coefficient 12 Seiko Instruments Inc. HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series Operation 1. Basic operation Figure 12 shows the block diagram of the S-1170 Series. The error amplifier compares the reference voltage (Vref) with Vfb, which is the output voltage resistancedivided by feedback resistors Rs and Rf. It supplies the output transistor with the gate voltage necessary to ensure a certain output voltage free of any fluctuations of input voltage and temperature. VIN *1 Current supply Error amplifier VOUT − Vref Rf + Vfb Reference voltage circuit Rs VSS *1. Parasitic diode Figure 12 2. Output transistor The S-1170 Series uses a low on-resistance P-channel MOS FET as the output transistor. Be sure that VOUT does not exceed VIN + 0.3 V to prevent the voltage regulator from being damaged due to inverse current flowing from VOUT pin through a parasitic diode to VIN pin. Seiko Instruments Inc. 13 HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series 3. Shutdown pin (ON/OFF pin) This pin starts and stops the regulator. When the ON/OFF pin is set to the shutdown level, the operation of all internal circuits stops, and the builtin P-channel MOS FET output transistor between the VIN pin and VOUT pin is turned off to substantially reduce the current consumption. The VOUT pin becomes the VSS level due to the internally divided resistance of several hundreds kΩ between the VOUT pin and VSS pin. The structure of the ON/OFF pin is as shown in Figure 13. Since the ON/OFF pin is neither pulled down nor pulled up internally, do not use it in the floating state. In addition, note that the current consumption increases if a voltage of 0.3 V to VIN − 0.3 V is applied to the ON/OFF pin. When the ON/OFF pin is not used, connect it to the VSS pin if the logic type is “A” and to the VIN pin if it is “B”. Table 6 Logic Type ON/OFF Pin Internal Circuits VOUT Pin Voltage Current Consumption A “L”: Power on Operating Set value ISS1 A “H”: Power off Stopped VSS level ISS2 B “L”: Power off Stopped VSS level ISS2 B “H”: Power on Operating Set value ISS1 VIN ON/OFF VSS Figure 13 14 Seiko Instruments Inc. HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series 4. Thermal shutdown circuit The S-1170 Series implements a thermal shutdown circuit to protect the device from damage due to overheating. When the junction temperature rises to 150°C (typ.), the thermal shutdown circuit operates and the regulator operation stops. When the junction temperature drops to 120°C (typ.), the thermal shutdown circuit is released and the regulator operation resumes. If the thermal shutdown circuit starts operating due to self-heating, the regulator operation stops and the output voltage falls. When the regulator operation has stopped, no self-heat is generated and the temperature of the IC is lowered. When the temperature has dropped, the thermal shutdown circuit is released, the regulator operation resumes, and self-heat is generated again. By repeating this procedure, the output voltage waveform forms pulses. This phenomenon, stopping and resuming the regulator operation, continues until the internal power consumption is reduced by reducing either the input voltage or output current or both, or the ambient temperature is lowered. Table 7 Thermal Shutdown Circuit VOUT Pin Voltage Operating: 150°C (typ.) VSS level Released: 120°C (typ.) Set value Seiko Instruments Inc. 15 HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series Precautions • Wiring patterns for the VIN, VOUT and GND pins should be designed so that the impedance is low. When mounting an output capacitor between the VOUT and VSS pins (CL) and a capacitor for stabilizing the input between VIN and VSS pins (CIN), the distance from the capacitors to these pins should be as short as possible. • Note that the output voltage may increase when a series regulator is used at low load current (1.0 mA or less). • Generally a series regulator may cause oscillation, depending on the selection of external parts. The following conditions are recommended for this IC. However, be sure to perform sufficient evaluation under the actual usage conditions for selection, including evaluation of temperature characteristics. Input capacitor (CIN): 4.7 µF or more Output capacitor (CL): 4.7 µF or more Equivalent series resistance (ESR): 0.5 Ω or less • The voltage regulator may oscillate when the impedance of the power supply is high and the input capacitor is small or an input capacitor is not connected. • The application conditions for the input voltage, output voltage, and load current should not exceed the package power dissipation. • Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. • In determining the output current, attention should be paid to the output current value specified in Table 5 in the “ Electrical Characteristics” and footnote *5 of the table. • SII claims no responsibility for any disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party. 16 Seiko Instruments Inc. HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series Typical Characteristics (1) Output Voltage vs. Output current (when load current increases) S-1170B30 (Ta = 25°C) 3.5 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 3.0 2.5 VOUT [V] VOUT [V] S-1170B15 (Ta = 25°C) VIN = 2.0 V 2.5 V 6.5 V VIN = 3.5 V 2.0 4.0 V 1.5 6.5 V 1.0 0.5 0 0 200 400 800 600 1000 1200 0 200 IOUT [mA] 400 800 600 1000 1200 IOUT [mA] S-1170B50 (Ta = 25°C) 6 5 VOUT [V] 4 VIN = 5.5 V 6.0 V 6.5 V 3 2 1 0 0 200 400 600 800 1000 1200 Remark In determining the output current, attention should be paid to the following. 1) The minimum output current value and footnote *5 in the “ Electrical Characteristics” 2) The package power dissipation IOUT [mA] (2) Output voltage vs. Input voltage S-1170B30 (Ta = 25°C) 1.6 3.1 1.5 3.0 1.4 IOUT = 1 mA 10 mA 100 mA 300 mA 1.3 1.2 1.1 1.0 1.0 VOUT [V] VOUT [V] S-1170B15 (Ta = 25°C) 1.5 2.0 2.9 IOUT = 1 mA 10 mA 100 mA 300 mA 2.8 2.7 2.6 2.5 3.0 3.5 2.5 2.5 VIN [V] 3.0 3.5 4.0 4.5 5.0 VIN [V] S-1170B50 (Ta = 25°C) 5.1 5.0 VOUT [V] 4.9 4.8 4.7 4.6 4.5 4.5 IOUT = 1 mA 10 mA 100 mA 300 mA 5.0 5.5 6.0 6.5 7.0 VIN [V] Seiko Instruments Inc. 17 HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series (3) Dropout voltage vs. Output current S-1170B30 0.6 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 25°C −40°C 0.3 100 200 300 400 500 600 700 800 900 0 0.6 Vdrop [V] 0.5 25°C 0.4 85°C 0.3 −40°C 0.2 0.1 0 100 200 300 400 500 600 700 800 900 IOUT [mA] Vdrop [V] (4) Dropout voltage vs. Set output voltage 800 mA 600 mA 300 mA 10 mA 0 1 2 3 0 100 200 300 400 500 600 700 800 900 IOUT [mA] S-1170B50 4 5 6 VOTA [V] 18 −40°C 0.2 IOUT [mA] 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 85°C 0.4 0.1 0 0 25°C 0.5 85°C Vdrop [V] Vdrop [V] S-1170B15 Seiko Instruments Inc. HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series (5) Output voltage vs. Ambient temperature 1.70 1.65 1.60 1.55 1.50 1.45 1.40 1.35 1.30 −40 −25 S-1170B30 (IOUT = 10 mA) VOUT(E) [V] VOUT(E) [V] S-1170B15 (IOUT = 10 mA) 25 0 75 85 50 3.20 3.15 3.10 3.05 3.00 2.95 2.90 2.85 2.80 −40 −25 25 0 Ta [°C] 75 85 50 Ta [°C] VOUT(E) [V] S-1170B50 (IOUT = 10 mA) 5.20 5.15 5.10 5.05 5.00 4.95 4.90 4.85 4.80 −40 −25 0 50 25 75 85 Ta [°C] (6) Current consumption vs. Input voltage 80 70 60 50 40 30 20 10 0 S-1170B30 (Ta = 25°C) ISS1 [µA] ISS1 [µA] S-1170B15 (Ta = 25°C) 0 1 2 3 4 5 6 7 80 70 60 50 40 30 20 10 0 0 VIN [V] 1 2 3 4 5 6 7 VIN [V] ISS1 [µA] S-1170B50 (Ta = 25°C) 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 VIN [V] Seiko Instruments Inc. 19 HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series (7) Ripple rejection S-1170B15 (Ta = 25°C) S-1170B30 (Ta = 25°C) VIN = 2.5 V, COUT = 4.7 µF VIN = 4.0 V, COUT = 4.7 µF 100 IOUT = 50 mA Ripple Rejection [dB] Ripple Rejection [dB] 100 80 60 100 mA 40 20 0 10 1k 100 10k 100k 1M 60 40 0 10 VIN = 6.0 V, COUT = 4.7 µF Ripple Rejection [dB] 100 IOUT = 50 mA 100 mA 40 20 0 10 100 1k 10k 100k 1M Frequency [Hz] 20 100 1k 10k Frequency [Hz] S-1170B50 (Ta = 25°C) 60 100 mA 20 Frequency [Hz] 80 IOUT = 50 mA 80 Seiko Instruments Inc. 100k 1M HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series Reference Data (1) Input transient response characteristics S-1170B30 IOUT = 100 mA, tr = tf = 5.0 µs, COUT = 4.7 µF, CIN = 4.7 µF IOUT = 100 mA, tr = tf = 5.0 µs, COUT = 4.7 µF, CIN = 4.7 µF VOUT −20 −10 0 10 20 30 40 50 60 6.0 3.08 3.06 5.0 VIN 3.04 4.0 3.0 3.02 3.00 2.98 2.96 2.0 VOUT VIN [V] VIN 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 VOUT [V] 1.62 1.60 1.58 1.56 1.54 1.52 1.50 1.48 1.46 VIN [V] VOUT [V] S-1170B15 1.0 0 −20 −10 0 10 t [µs] 20 30 40 50 60 t [µs] S-1170B50 5.12 5.10 5.08 5.06 5.04 5.02 5.00 4.98 4.96 VIN VOUT −20 −10 0 10 20 30 40 50 60 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 VIN [V] VOUT [V] IOUT = 100 mA, tr = tf = 5.0 µs, COUT = 4.7 µF, CIN = 4.7 µF t [µs] (2) Load transient response characteristics S-1170B15 (Ta = 25°C) S-1170B30 (Ta = 25°C) VIN = 2.5 V, COUT = 4.7 µF, CIN = 4.7 µF, IOUT = 50↔100 mA VIN = 4.0 V, COUT = 4.7 µF, CIN = 4.7 µF, IOUT = 50↔100 mA 1.60 1.55 3.20 100 3.15 50 3.10 0 VOUT 20 40 60 80 0 VOUT −100 2.95 −100 −150 2.90 1.45 0 50 −50 −50 −20 100 3.00 1.50 1.40 3.05 150 IOUT 100 120 140 160 −20 t [µs] 0 20 40 60 80 100 120 140 IOUT [mA] VOUT [V] 1.65 150 VOUT [V] IOUT IOUT [mA] 1.70 −150 160 t [µs] S-1170B50 (Ta = 25°C) VIN = 6.0 V, COUT = 4.7 µF, CIN = 4.7 µF, IOUT = 50↔100 mA 5.15 150 IOUT 100 50 VOUT [V] 5.10 5.05 0 VOUT 5.00 −50 4.95 −100 4.90 −20 0 20 40 60 80 100 120 140 IOUT [mA] 5.20 −150 160 t [µs] Seiko Instruments Inc. 21 HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_02 S-1170 Series S-1170B15 (Ta = 25°C) S-1170B30 (Ta = 25°C) VIN = 2.5 V, COUT = 4.7 µF, CIN = 4.7 µF, IOUT = 100 mA VIN = 4.0 V, COUT = 4.7 µF, CIN = 4.7 µF, IOUT = 100 mA 5 3 1 2 0 1 −1 VOUT VOUT [V] 2 VON/OFF 3 VON/OFF [V] VOUT [V] 4 −2 0 −1 −10 0 10 20 30 40 50 60 70 80 −3 90 7 6 5 4 3 2 1 0 −1 6 4 2 0 −2 −4 −6 VON/OFF VOUT −10 0 10 20 t [µs] 30 40 50 60 70 80 VON/OFF [V] (3) Shutdown pin transient response characteristics 90 t [µs] S-1170B50 (Ta = 25°C) VIN = 6.0 V, COUT = 4.7 µF, CIN = 4.7 µF, IOUT = 100 mA VOUT [V] 7 3 VON/OFF 5 0 3 −3 VOUT 1 −1 −10 0 VON/OFF [V] 6 9 −6 10 20 30 40 50 60 70 80 90 3 4 2 VON/OFF 3 1 2 0 1 −1 VOUT −2 0 −1 −10 0 10 20 30 40 50 60 70 80 −3 90 VOUT [V] 5 VON/OFF [V] VIN = 4.0 V, COUT = 4.7 µF, CIN = 4.7 µF, IOUT = 300 mA VOUT [V] S-1170B30 (Ta = 25°C) VIN = 2.5 V, COUT = 4.7 µF, CIN = 4.7 µF, IOUT = 300 mA 7 6 5 4 3 2 1 0 −1 t [µs] VIN = 6.0 V, COUT = 4.7 µF, CIN = 4.7 µF, IOUT = 300 mA VOUT [V] 3 VON/OFF 5 0 3 −1 −3 VOUT −10 0 VON/OFF [V] 6 9 1 −6 10 20 30 40 50 60 70 80 90 t [µs] 22 VON/OFF VOUT −10 0 10 20 30 40 t [µs] S-1170B50 (Ta = 25°C) 7 6 4 2 0 −2 −4 −6 Seiko Instruments Inc. 50 60 70 80 90 VON/OFF [V] t [µs] S-1170B15 (Ta = 25°C) 4.5±0.1 1.5±0.1 1.6±0.2 5 1 4 2 3 1.5±0.1 1.5±0.1 0.4±0.05 0.3 0.4±0.1 0.4±0.1 45° 0.45±0.1 No. UP005-A-P-SD-1.1 TITLE SOT895-A-PKG Dimensions UP005-A-P-SD-1.1 No. SCALE UNIT mm Seiko Instruments Inc. 4.0±0.1(10 pitches : 40.0±0.2) ø1.5 +0.1 -0 2.0±0.05 5° max. ø1.5 +0.1 -0 0.3±0.05 8.0±0.1 2.0±0.1 4.75±0.1 3 2 1 4 5 Feed direction No. UP005-A-C-SD-1.1 TITLE SOT895-A-Carrier Tape UP005-A-C-SD-1.1 No. SCALE UNIT mm Seiko Instruments Inc. 16.5max. 13.0±0.3 Enlarged drawing in the central part (60°) (60°) No. UP005-A-R-SD-1.1 TITLE SOT895-A-Reel No. UP005-A-R-SD-1.1 SCALE QTY. UNIT mm Seiko Instruments Inc. 1,000 2.90±0.1 0.5typ. +0.1 0.30 -0.05 0.95±0.05 (1.5) No. PD006-A-P-SD-4.0 TITLE The exposed thermal die pad has different electric potential depending on the product. Confirm specifications of each product. Do not use it as the function of electrode. HSON6A-A-PKG Dimensions No. PD006-A-P-SD-4.0 SCALE UNIT mm Seiko Instruments Inc. 4.0±0.1 1.5±0.1 2.0±0.05 ø1.55±0.05 0.2±0.05 3.3±0.1 3 1 4 6 ø1.05±0.05 4.0±0.1 Feed direction No. PD006-A-C-SD-2.0 TITLE HSON6A-A-Carrier Tape PD006-A-C-SD-2.0 No. SCALE UNIT mm Seiko Instruments Inc. 12.5max. 9.0±0.3 Enlarged drawing in the central part ø13±0.2 (60°) (60°) No. PD006-A-R-SD-1.0 TITLE HSON6A-A-Reel No. PD006-A-R-SD-1.0 SCALE UNIT QTY. mm Seiko Instruments Inc. 3000 • • • • • • The information described herein is subject to change without notice. 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The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc. Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.