GP1S56TJ000F GP1S56TJ000F Gap : 2mm, Slit : 0.15mm Phototransistor Output, Case package Transmissive Photointerrupter ■ Description ■ Agency approvals/Compliance GP1S56TJ000F is a standard, phototransistor output, transmissive photointerrupter with opposing emitter and detector in a case, providing non-contact sensing. For this family of devices, the emitter and detector are inserted in a case, resulting in a through-hole design. This device is unique because it uses position pins to insure accurate placement on the PCB, and has the short profile. 1. Compliant with RoHS directive ■ Applications 1. General purpose detection of object presence or motion. 2. Example : Printer, FAX, Optical storage unit ■ Features 1. Transmissive with phototransistor output 2. Highlights : • Vertical Slit for alternate motion detection • Positioning Pin to prevent misalignment • High resolution (Slit width : 0.15 mm) 3. Key Parameters : • Gap Width : 2mm • Slit Width (detector side): 0.15mm • Package : 11×7.5×5mm 4. Lead free and RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D3-A02701EN Date Oct. 3. 2005 © SHARP Corporation GP1S56TJ000F ■ Internal Connection Diagram Top view 3 1 Anode 2 2 Cathode 4 3 Collector 1 4 Emitter ■ Outline Dimensions (Unit : mm) Top view Date code Model No. 5 56 S B-Bʼ section 11 0.15±0.07 C1 2+0.3 −0 2 Aʼ 4−0.45+0.3 −0.1 Bʼ 4−0.4+0.3 −0.1 12MIN. 7.5MAX. B A 2−0.7 0.15 C1 ±0.07 (5.5) Detector center A-Aʼ section SHARP mark "S" (7.4) (2.54) 10.2±0.15 4 1 3 2 2− φ 0.7±0.05 • Unspecified tolerance shall be as follows ; Dimensions (d) d≤6 6<d≤18 Tolerance ±0.1 ±0.2 • ( ) : Reference dimensions Product mass : approx. 0.38g Dip soldering material : Sn−3Ag−0.5Cu Sheet No.: D2-A02701EN 2 GP1S56TJ000F Date code (2 digit) 1st digit Year of production A.D. Mark 2000 0 2001 1 2002 2 2003 3 2004 4 2005 5 2006 6 2007 7 2008 8 2009 9 2010 0 : : 2nd digit Month of production Month Mark 1 1 2 2 3 3 4 4 5 5 6 6 7 7 8 8 9 9 10 X 11 Y 12 Z repeats in a 10 year cycle Country of origin Japan or Indonesia (Indicated on the packing case) Sheet No.: D2-A02701EN 3 GP1S56TJ000F ■ Absolute Maximum Ratings Parameter ∗1 Forward current ∗2 Peak forward current Input Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Output Collector current ∗1 Collector power dissipation Operating temperature Storage temperature ∗3 Soldering temperature Symbol Rating IF 50 IFM 1 VR 6 P 75 VCEO 35 VECO 6 IC 20 PC 75 Topr −25 to +85 Tstg −40 to +100 Tsol 260 (Ta=25˚C) Unit mA A V mW V V mA mW ˚C ˚C ˚C ∗ 1 Refer to Fig. 1, 2, 3 2 Pulse width ≤ 100μs, Duty ratio=0.01 ∗ 3 For 5s or less ∗ ■ Electro-optical Characteristics Parameter Forward voltage Input Peak forward voltage Reverse current Output Collector dark current Collector current Transfer Collector-emitter saturation voltage characRise time teristics Response time Fall time Symbol VF VFM IR ICEO IC VCE(sat) tr tf Condition IF=20mA IFM=0.5A VR=3V VCE=20V VCE=5V, IF=20mA IF=40mA, IC=0.25mA VCE=2V, IC=0.5mA, RL=1kΩ MIN. − − − 0.4 − − − TYP. 1.2 3 − 1 − − 38 48 (Ta=25˚C) MAX. Unit 1.4 V 4 V 10 μA 100 nA mA − 0.4 V 90 μs 110 Sheet No.: D2-A02701EN 4 GP1S56TJ000F Fig.2 Collector Power Dissipation vs. Ambient Temperature Fig.1 Forward Current vs. Ambient Temperature 120 Collector power dissipation PC (mW) 60 Forward current IF (mA) 50 40 30 20 10 0 −25 0 25 50 75 85 Ambient temperature Ta (˚C) 100 80 75 60 40 20 15 0 −25 100 0 75 85 100 25˚C 0˚C −25˚C Ta =75˚C 50˚C 1 000 Forward current IF (mA) Peak forward current IFM (mA) Pulse width <= 100μs Ta =25˚C 100 10−2 50 Fig.4 Forward Current vs. Forward Voltage Fig.3 Peak Forward Current vs. Duty Ratio 10 25 Ambient temperature Ta (˚C) 100 10 1 10−1 Duty ratio 1 0 Fig.5 Collector Current vs. Forward Current 0.5 1 1.5 2 Foward voltage VF (V) 2.5 3 Fig.6 Collector Current vs. Collector-emitter Voltage 5 3 VCE= 5V Ta =25˚C Ta=25˚C Collector current IC (mA) Collector current IC (mA) 4 3 2 2 IF =50mA 40mA 30mA 1 20mA 1 10mA 0 0 10 20 30 40 Forward current IF (mA) 0 50 0 1 2 3 4 5 6 7 8 Collector-emitter VCE (V) 9 10 Sheet No.: D2-A02701EN 5 GP1S56TJ000F Fig.7 Collector Current vs. Ambient Temperature Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature 1.4 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 1.2 1 0.8 0.6 0.4 0.2 0 −25 0 25 50 75 Ambient temperature Ta (˚C) 1 000 IF =40mA IC =0.6mA 0.15 0.1 −25 100 Fig.9 Response Time vs. Load Resistance VCC tr 100 100 Input RL Input R D Output Output 10% 90% td td 10 0 25 50 75 Ambient temperature Ta (˚C) Fig.10 Test Circuit for Response Time VCE= 2V IC = 0.5mA Ta =25˚C tf Response time (μs) 0.2 tr ts ts tf 1 0.1 0.1 1 10 100 Load resistance RL (kΩ) 1 000 Fig.11 Frequency Response Fig.12 Collector Dark Current vs. Ambient Temperature 5 RL=10kΩ Collector dark current ICEO (A) Voltage gain AV (dB) 0 −5 10−6 VCE =2V IC =0.5mA Ta=25˚C 1kΩ 100Ω −10 −15 −20 102 103 104 105 10−7 10−8 10−9 10−10 −25 106 Frequency f (Hz) VCE= 20V 0 25 50 75 Ambient temperature Ta (˚C) 100 Sheet No.: D2-A02701EN 6 GP1S56TJ000F Fig.13 Relative Collector Current vs. Shield Distance (1) Shield Sensor − 0 + 0 −0.5 −0.4 −0.3 −0.2 −0.1 0 0.1 0.2 0.3 0.4 0.5 Shield moving distance L (mm) Shield − L L 50 IF =20mA VCE=5V Ta =25˚C 100 Relative collector current (%) Relative collector current (%) IF =20mA VCE=5V Ta =25˚C 0 100 Fig.14 Relative Collector Current vs. Shield Distance (2) + 50 0 −4 Sensor −3 −2 −1 0 1 2 Shield moving distance L (mm) 3 4 Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A02701EN 7 GP1S56TJ000F ■ Design Considerations ● Design guide 1) Prevention of detection error To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 2) Position of opaque board Opaque board shall be installed at place 3mm or more from the top of elements. (Example) 3.0mm or more This product is not designed against irradiation and incorporates non-coherent IRED. ● Degradation In general, the emission of the IRED used in photocouplers will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. ● Parts This product is assembled using the below parts. • Photodetector (qty. : 1) Category Material Maximum Sensitivity wavelength (nm) Sensitivity wavelength (nm) Response time (μs) Phototransistor Silicon (Si) 800 400 to 1 200 3 • Photo emitter (qty. : 1) Category Material Maximum light emitting wavelength (nm) I/O Frequency (MHz) Infrared emitting diode (non-coherent) Gallium arsenide (GaAs) 950 0.3 • Material Case Lead frame plating Black noryl resin Solder dip. (Sn−3Ag−0.5Cu) Sheet No.: D2-A02701EN 8 GP1S56TJ000F ■ Manufacturing Guidelines ● Soldering Method Flow Soldering: Soldering should be completed below 260˚C and within 5 s. Please take care not to let any external force exert on lead pins. Please don't do soldering with preheating, and please don't do soldering by reflow. Hand soldering Hand soldering should be completed within 3 s when the point of solder iron is below 350̊C. Please solder within one time. Please don't touch the terminals directly by soldering iron. Soldered product shall treat at normal temperature. Other notice Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions. Flux Some flux, which is used in soldering, may crack the package due to synergistic effect of alcohol in flux and the rise in temperature by heat in soldering. Therefore, in using flux, please make sure that it does not have any influence on appearance and reliability of the photointerrupter. Sheet No.: D2-A02701EN 9 GP1S56TJ000F ● Cleaning instructions Solvent cleaning : Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less. Ultrasonic cleaning : The affect to device by ultrasonic cleaning is different by cleaning bath size, ultrasonic power output, cleaning time, PCB size or device mounting condition etc. Please test it in actual using condition and confirm that doesn't occur any defect before starting the ultrasonic cleaning. Recommended solvent materials : Ethyl alcohol, Methyl alcohol and Isopropyl alcohol. ● Presence of ODC This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). •Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE). Sheet No.: D2-A02701EN 10 GP1S56TJ000F ■ Package specification ● Case package Package materials Anti-static plastic bag : Polyethtylene Moltopren : Urethane Partition : Corrugated fiberboard Packing case : Corrugated fiberboard Package method 100 pcs of products shall be packaged in a plastic bag, Ends shall be fixed by stoppers. The bottom ot the packing case is covered with moltopren, and the partition is set in the packing case. Each partition should have 1 plastic bag. The 10 plastic bags containing a product are put in the packing case. Moltopren should be located after all product are settled (1 packing contains 1 000 pcs). Packing composition Moltopren Partition Anti-static plastic bag Packing case Sheet No.: D2-A02701EN 11 GP1S56TJ000F ■ Important Notices · The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii) SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). · Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. · If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices. · Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection · This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. · Contact and consult with a SHARP representative if there are any questions about the contents of this publication. Sheet No.: D2-A02701EN [H152] 12