PHILIPS BUK7880-55A

BUK7880-55A
N-channel TrenchMOS standard level FET
Rev. 01 — 1 November 2007
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP General Purpose Automotive (GPA) TrenchMOS technology.
1.2 Features
n Very low on-state resistance
n 150 °C rated
n Q101 compliant
n Standard level compatible
1.3 Applications
n Automotive systems
n Motors, lamps and solenoids
n General purpose power switching
n 12 V and 24 V loads
1.4 Quick reference data
n EDS(AL)S ≤ 53 mJ
n ID ≤ 7 A
n RDSon = 68 mΩ (typ)
n Ptot ≤ 8 W
2. Pinning information
Table 1.
Pinning
Pin
Description
1
gate (G)
2
drain (D)
3
source (S)
4
solder point; connected to drain (D)
Simplified outline
Symbol
D
4
G
mbb076
1
2
3
sot223_so
SOT223 (SC-73)
S
BUK7880-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2.
Ordering information
Type number
BUK7880-55A
Package
Name
Description
Version
SC-73
plastic surface-mounted package with increased heatsink; 4 leads
SOT223
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
drain-source voltage
VDGR
drain-gate voltage (DC)
VGS
gate-source voltage
ID
drain current
Conditions
RGS = 20 kΩ
Min Max
Unit
-
55
V
-
55
V
-
±20
V
Tsp = 25 °C; VGS = 10 V; see Figure 2 and 3
-
7
A
Tsp = 100 °C; VGS = 10 V; see Figure 2
-
5
A
IDM
peak drain current
Tsp = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3
-
30
A
Ptot
total power dissipation
Tsp = 25 °C; see Figure 1
-
8
W
Tstg
storage temperature
−55 +150 °C
Tj
junction temperature
−55 +150 °C
Source-drain diode
IDR
reverse drain current
Tsp = 25 °C
-
7
A
IDRM
peak reverse drain current
Tsp = 25 °C; pulsed; tp ≤ 10 µs
-
30
A
unclamped inductive load; ID = 7 A; VDS ≤ 55 V;
RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C
-
53
mJ
-
-
J
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche
energy
EDS(AL)R
repetitive drain-source avalanche
energy
[1]
[1]
Conditions:
a) Maximum value not quoted. Repetitive rating defined in Figure 16.
b) Single-pulse avalanche rating limited by Tj(max) of 150 °C.
c) Repetitive avalanche rating limited by an average junction temperature of 150 °C.
d) Refer to application note AN10273 for further information.
BUK7880-55A_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 November 2007
2 of 13
BUK7880-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
03aa17
120
003aab532
8
ID
(A)
Pder
(%)
6
80
4
40
2
0
0
50
100
150
Tsp (°C)
200
0
0
50
100
150
Tsp (°C)
VGS ≥ 10 V
P tot
P der = ------------------------ × 100 %
P tot ( 25°C )
Fig 1. Normalized total power dissipation as a
function of solder point temperature
Fig 2. Continuous drain current as a function of
solder point temperature
003aab530
102
ID
(A)
tp = 10 µ s
Limit RDSon = VDS / ID
10
100 µ s
1 ms
1
DC
10 ms
100 ms
10-1
10-1
1
10
102
VDS (V)
Tsp = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7880-55A_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 November 2007
3 of 13
BUK7880-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4.
Thermal characteristics
Symbol
Parameter
Rth(j-a)
Rth(j-sp)
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to ambient
-
70
-
K/W
thermal resistance from junction to solder point
-
-
15
K/W
003aab529
102
Zth(j-sp)
(K/W)
10 δ = 0.5
0.2
0.1
1 0.05
0.02
δ=
P
tp
T
10-1
single shot
t
tp
T
10-2
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
BUK7880-55A_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 November 2007
4 of 13
BUK7880-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
55
-
-
V
Tj = −55 °C
50
-
-
V
Static characteristics
V(BR)DSS
VGS(th)
IDSS
drain-source breakdown voltage ID = 250 µA; VGS = 0 V
gate-source threshold voltage
drain leakage current
ID = 1 mA; VDS = VGS; see Figure 9
Tj = 25 °C
2
3
4
V
Tj = 150 °C
1.2
-
-
V
Tj = −55 °C
-
-
4.4
V
VDS = 55 V; VGS = 0 V
Tj = 25 °C
-
0.05
10
µA
Tj = 150 °C
-
-
500
µA
-
2
100
nA
VGS = ±20 V; VDS = 0 V
IGSS
gate leakage current
RDSon
drain-source on-state resistance VGS = 10 V; ID = 10 A; see Figure 6 and 8
Tj = 25 °C
-
68
80
mΩ
Tj = 150 °C
-
-
148
mΩ
-
12
-
nC
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
tf
ID = 10 A; VDD = 44 V; VGS = 10 V;
see Figure 14
-
2.5
-
nC
-
5
-
nC
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 12
-
374
500
pF
-
92
110
pF
-
62
85
pF
VDS = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
-
8
-
ns
-
52
-
ns
turn-off delay time
-
17
-
ns
fall time
-
9
-
ns
Source-drain diode
VSD
source-drain voltage
IS = 15 A; VGS = 0 V; see Figure 15
-
0.85
1.2
V
trr
reverse recovery time
-
33
-
ns
Qr
recovered charge
IS = 20 A; dIS/dt = −100 A/µs;
VGS = −10 V; VR = 30 V
-
31
-
nC
BUK7880-55A_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 November 2007
5 of 13
BUK7880-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
003aab523
50
ID
(A)
VGS (V) = 20
15
12
10
9.5
9
8.5
8
7.5
7
40
30
20
6.5
003aab525
100
RDSon
(mΩ)
90
80
70
60
6
10
5.5
5
4.5
0
0
2
4
6
50
40
5
8 VDS (V) 10
Tj = 25 °C
10
15
VGS (V)
20
Tj = 25 °C; ID = 10 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
003aab524
180
RDSon
(mΩ)
150
8
VGS (V) = 6
10
20
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
03nc24
2
a
1.8
1.6
1.4
120
1.2
1
90
0.8
60
0.6
0.4
30
0.2
0
0
10
20
30
40
ID (A)
50
Tj = 25 °C
0
-60
20
60
100
140
180
Tj (°C)
R DSon
a = ----------------------------R DSon ( 25°C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7880-55A_1
Product data sheet
-20
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 November 2007
6 of 13
BUK7880-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
03aa32
5
03aa35
10−1
ID
(A)
VGS(th)
(V)
4
3
2
min
10−2
max
typ
10−3
min
10−4
typ
max
10−5
1
0
−60
0
60
120
180
10−6
0
Tj (°C)
2
4
6
VGS (V)
Tj = 25 °C; VDS = VGS
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
003aab527
9
gfs
(S)
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
003aab520
103
Ciss
C
(pF)
8
Coss
102
7
Crss
6
5
5
10
15
ID (A)
20
Tj = 25 °C; VDS = 15 V
10
10-1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7880-55A_1
Product data sheet
1
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 November 2007
7 of 13
BUK7880-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
003aab526
15
ID
(A)
003aab522
10
VGS
(V)
8
12
VDS (V) = 14
9
6
6
4
3
VDS (V) = 44
2
Tj = 150 °C
Tj = 25 °C
0
0
0
2
4
6
8
VGS (V)
0
5
10
QG (nC)
15
Tj = 25 °C; ID = 10 A
VDS = 15 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aab521
25
IS
(A)
Fig 14. Gate-source voltage as a function of gate
charge; typical values
003aab528
10
IAL
(A)
20
(1)
1
(2)
15
10
(3)
10-1
5
Tj = 150 °C
Tj = 25 °C
0
0.0
0.4
0.8
1.2
VSD (V)
1.6
VGS = 0 V
10-2
10-3
10-2
10-1
1 t (ms) 10
AL
See Table note 1 of Table 3 Limiting values.
(1) Single-pulse; Tj = 25 °C.
(2) Single-pulse; Tj = 150 °C.
(3) Repetitive.
Fig 15. Source current as a function of source-drain
voltage; typical values
Fig 16. Single-pulse and repetitive avalanche rating;
avalanche current as a function of avalanche
time
BUK7880-55A_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 November 2007
8 of 13
BUK7880-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
7. Package outline
Plastic surface-mounted package with increased heatsink; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
SOT223
JEDEC
JEITA
SC-73
EUROPEAN
PROJECTION
ISSUE DATE
04-11-10
06-03-16
Fig 17. Package outline SOT223 (SC-73)
BUK7880-55A_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 November 2007
9 of 13
BUK7880-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
8. Soldering
7.00
3.85
3.60
3.50
0.30
1.20
(4 ×)
4
7.40
3.90 4.80 7.65
1
2
3
1.20 (3 ×)
1.30 (3 ×)
5.90
6.15
solder lands
occupied area
solder paste
solder resist
Dimensions in mm
sot223_fr
Fig 18. Reflow soldering footprint for SOT223 (SC-73)
BUK7880-55A_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 November 2007
10 of 13
BUK7880-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
9. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK7880-55A_1
20071101
Product data sheet
-
-
BUK7880-55A_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 November 2007
11 of 13
BUK7880-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
10.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
11. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BUK7880-55A_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 November 2007
12 of 13
BUK7880-55A
NXP Semiconductors
N-channel TrenchMOS standard level FET
12. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
10.1
10.2
10.3
10.4
11
12
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 1 November 2007
Document identifier: BUK7880-55A_1