VISHAY TLWR9622

TLWR962.
Vishay Semiconductors
TELUX™
Description
The TELUX™ series is a clear, non diffused LED for
applications where supreme luminous flux is required.
It is designed in an industry standard 7.62 mm square
package utilizing highly developed with super bright,
AllnGaP, OMA technology.
The supreme heat dissipation of TELUX™ allows
applications at high ambient temperatures.
All packing units are binned for luminous flux, forward
voltage and color to achieve the most homogenous
light appearance in application.
SAE and ECE color requirements for automobile
application are available for color red.
ESD resistivity 2 kV (HBM) according to MIL STD
883D, method 3015.7.
Features
• Utilizing one of the world’s brightest (AS)
AllnGaP technologies (OMA)
• High luminous flux
e3
• Supreme heat dissipation: RthJP is 90 K/W
• High operating temperature:
Tamb = - 40 to + 110 °C
• Meets SAE and ECE color requirements for
the automobile industry for color red
• Packed in tubes for automatic insertion
• Luminous flux, forward voltage and color
categorized for each tube
• Small mechanical tolerances allow precise usage
of external reflectors or lightguides
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
19232
Applications
Exterior lighting
Tail-, Stop - and Turn Signals of motor vehicles
Replaces small incandescent lamps
Traffic signals and signs
Parts Table
Part
Color, Luminous Intensity
Angle of Half Intensity (±ϕ)
Technology
TLWR9620
Red, φV > 3000 mlm
30 °
AllnGaP on Si
TLWR9621
Red, φV > 3500 mlm
30 °
AllnGaP on Si
TLWR9622
Red, φV > 4000 mlm
30 °
AllnGaP on Si
Document Number 83287
Rev. 1.4, 23-Sep-05
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TLWR962.
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
TLWR962.
Symbol
Value
Reverse voltage
Parameter
IR = 100 μA
Test condition
VR
10
Unit
V
DC Forward current
Tamb ≤ 85 °C
IF
70
mA
Surge forward current
tp ≤ 10 μs
IFSM
0.1
A
PV
212
mW
Power dissipation
Junction temperature
Tj
125
°C
Operating temperature range
Tamb
- 40 to + 110
°C
Storage temperature range
Tstg
- 40 to + 110
°C
Tsd
260
°C
RthJA
200
K/W
Soldering temperature
t ≤ 5 s, 1.5 mm from body
preheat temperature
100 °C/ 30 sec.
Thermal resistance junction/
ambient
with cathode heatsink
of 70 mm2
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Red
TLWR962.
Parameter
Test condition
IF = 70 mA, RthJA = 200 °K/W
Total flux
Part
Symbol
Min
Typ.
TLWR9620
φV
3000
3700
mlm
TLWR9621
φV
3500
4200
mlm
TLWR9622
φV
4000
5000
mlm
0.8
mcd/
mlm
Luminous intensity/Total flux
IF = 70 mA, RthJA = 200 °K/W
IV/φV
Dominant wavelength
IF = 70 mA, RthJA = 200 °K/W
λd
611
615
Max
634
Unit
nm
Peak wavelength
IF = 70 mA, RthJA = 200 °K/W
λp
624
nm
Angle of half intensity
IF = 70 mA, RthJA = 200 °K/W
ϕ
± 30
deg
Total included angle
90 % of Total Flux Captured
ϕ0.9V
75
deg
Forward voltage
IF = 70 mA, RthJA = 200 °K/W
Reverse voltage
VF
1.83
2.5
VR
10
20
3.03
V
V
Temperature coefficient < λd
IF = 70 mA
TCλd
17
nm/K
Temperature coefficient VF
IF = 70 mA, T > - 25 °C
TCVF
- 2.0
mV/K
Forward Voltage Classification
Group
max
1.83
2.07
Z
1.95
2.19
0
2.07
2.31
1
2.19
2.43
2
2.31
2.55
3
2.43
2.67
4
2.55
2.79
5
2.67
2.91
6
2.79
3.03
Y
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Forward Voltage (V)
min
Document Number 83287
Rev. 1.4, 23-Sep-05
TLWR962.
Vishay Semiconductors
Color Classification
Group
Dominant Wavelength (nm)
min
max
1
611
618
2
614
622
3
616
634
Luminous Flux Classification
Group
Luminous Intensity (mlm)
min
max
F
3000
4200
G
3500
4800
H
4000
6100
I
5000
7300
K
6000
9700
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
0°
I v rel – Relative Luminous Intensity
I F – Forward Current ( mA )
100
Red
80
60
40
20
RthJA=200K/W
10°
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0
0
15983
20
40
60
80
100 120
Tamb – Ambient Temperature ( qC )
Figure 1. Forward Current vs. Ambient Temperature
0.6
0.4
0.2
0
0.2
0.4
0.6
16006
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
for 60 ° emission angle
0.12
100
80
% Total Luminous Flux
I F –Forward Current (A)
90
0.10
0.005
0.05
0.5
0.08
0.06
0.04
0.02
70
60
50
40
30
20
10
16731
0.00
10–5 10–4 10–3 10–2 10–1 100
tp – Pulse Length (ms)
0
101
102
Figure 2. Forward Current vs. Pulse Length
Document Number 83287
Rev. 1.4, 23-Sep-05
0
16005
25
50
75
100
125
Total Included Angle (Degrees)
Figure 4. Percentage Total Luminous Flux vs. Total Included Angle
for 60 ° emission angle
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TLWR962.
Vishay Semiconductors
230
Padsize 8 mm 2
per Anode Pin
220
R thJA in K/W
210
200
190
180
170
160
0
50
16009
100 150 200 250
Cathode Padsize in mm 2
300
Figure 5. Thermal Resistance Junction Ambient vs. Cathode
Padsize
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Document Number 83287
Rev. 1.4, 23-Sep-05
TLWR962.
Vishay Semiconductors
Package Dimensions in mm
16004
Document Number 83287
Rev. 1.4, 23-Sep-05
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TLWR962.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 83287
Rev. 1.4, 23-Sep-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
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or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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