DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF2022-40 UHF power LDMOS transistor Preliminary specification 2001 April 05 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2022-40 PINNING FEATURES • High power gain PIN DESCRIPTION • Easy power control 1 drain • Excellent ruggedness 2 gate • Designed for broadband operation (2.0 to 2.2 GHz) 3 source, connected to flange • Internal input and output matching for high gain and efficiency • Improved linearity at backoff levels. 1 APPLICATIONS • Common source class-AB operation for PCN and PCS applications in the 2000 to 2200 MHz frequency range 3 • Suitable for GSM, Edge, CDMA and WCDMA applications. 2 Top view MBL290 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flange package with a ceramic cap. The common source is connected to the mounting flange. Fig.1 Simplified outline SOT608A. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Two-tone, class-AB f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) dim (dBc) 28 40 (PEP) >10.5 >30 ≤−25 MIN. MAX. UNIT f1 = 2170; f2 = 2170.1 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VDS drain-source voltage − 65 V VGS gate-source voltage − ±15 V ID DC drain current − 5 A Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C 2001 April 05 2 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2022-40 THERMAL CHARACTERISTICS SYMBOL Rth j-h PARAMETER CONDITIONS VALUE UNIT thermal resistance from junction to heatsink Th = 25 °C, Ptot = 152 W, note 1 2.3 K/W Note 1. Determined under specified RF operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 0.8 mA 65 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 80 mA − 5 − V IDSS drain-source leakage current VGS = 0; VDS = 26 V − − 6 µA IDSX on-state drain current VGS = VGS th + 9 V; VDS = 10 V 11 − − A IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 14 nA gfs forward transconductance VDS = 10 V; ID = 2.9 A − 2.3 − S RDSon drain-source on-state resistance VGS = VGS th + 9 V; ID = 2.9 A − 0.26 − Ω Crss feedback capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 1.7 − pF APPLICATION INFORMATION RF performance in a common source class-AB circuit. T h = 25 °C; Rth j-h = 1.15 K/W, unless otherwise specified. MODE OF OPERATION Two-tone, class-AB f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) dim (dBc) f1 = 2170; f2 = 2170.1 28 340 40 (PEP) >10.5 >30 ≤−25 Ruggedness in class-AB operation The BLF2022-40 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDQ = 340 mA; PL = 40 W; f = 2170 MHz. 2001 April 05 3 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2022-40 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 2 leads SOT608A Package under development Philips Semiconductors reserves the right to make changes without notice. D A F 3 D1 U1 B q c C 1 H E1 p U2 E w1 M A M B M 2 A w2 M C M b Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.75 3.73 7.24 6.99 0.15 0.10 10.29 10.29 9.98 10.03 inches 0.187 0.147 0.285 0.006 0.275 0.004 0.405 0.405 0.393 0.395 OUTLINE VERSION D D1 E E1 F H p Q q U1 U2 w1 w2 10.29 10.29 9.98 10.03 1.14 0.89 15.75 14.73 3.43 3.18 1.70 1.35 15.24 20.45 20.19 9.91 9.65 0.25 0.51 0.405 0.405 0.393 0.395 0.045 0.620 0.035 0.580 0.125 0.115 0.067 0.600 0.053 0.805 0.795 0.390 0.010 0.020 0.380 REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-02-02 01-02-22 SOT608A 2001 April 05 EUROPEAN PROJECTION 4 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2022-40 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. 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