DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1048 UHF power LDMOS transistor Preliminary specification Supersedes data of 1999 July 01 2000 Feb 02 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1048 FEATURES PINNING - SOT502A • High power gain PIN DESCRIPTION • Easy power control 1 drain • Excellent ruggedness 2 gate • Source on underside eliminates DC isolators, reducing common mode inductance 3 source, connected to flange • Designed for broadband operation (HF to 1 GHz). APPLICATIONS handbook, halfpage 1 • Communication transmitter applications in the UHF frequency range. 2 3 DESCRIPTION Top view Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the mounting flange. MBK394 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) dim (dBc) CW, class-AB (2-tone) f1 = 960; f2 = 960.1 26 90 (PEP) >14 >35 ≤−26 CW, class-AB (1-tone) 960 26 90 >14 >45 − MODE OF OPERATION CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2000 Feb 02 2 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1048 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage − ±20 V ID drain current (DC) − 9 A Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL Rth j-h PARAMETER CONDITIONS Th = 25 °C; Ptot = 100 W; note 1 thermal resistance from junction to heatsink VALUE UNIT 1.15 K/W Note 1. Determined under specified RF operating conditions, based on maximum peak junction temperature. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 1.4 mA 65 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 140 mA 4 − 5 V IDSS drain-source leakage current VGS = 0; VDS = 26 V − − 10 µA IDSX drain cut-off current VGS = VGSth + 9 V; VDS = 10 V 25 − − A IGSS gate leakage current VGS = ±20 V; VDS = 0 − − 250 nA gfs forward transconductance VDS = 10 V; ID = 7 A − 4 − S RDSon drain-source on-state resistance VGS = VGSth + 9 V; ID = 7 A − 150 − mΩ Cis input capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 92 − pF Cos output capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 74 − pF Crs feedback capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 3 − pF APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth j-h = 1.15 K/W, unless otherwise specified. f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) dim (dBc) CW, class-AB (2-tone) f1 = 960; f2 = 960.1 26 90 (PEP) >14 >35 ≤−26 CW, class-AB (1-tone) 960 26 90 >14 >45 − MODE OF OPERATION Ruggedness in class-AB operation The BLF1048 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 960 MHz at rated load power. 2000 Feb 02 3 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1048 PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.99 12.83 12.57 0.15 0.08 inches 0.186 0.157 0.505 0.006 0.495 0.003 OUTLINE VERSION D E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D1 0.045 0.785 0.035 0.745 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-10-13 99-12-28 SOT502A 2000 Feb 02 0.210 0.133 0.170 0.123 4 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1048 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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