PHILIPS BLF1047

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D390
BLF1047
UHF power LDMOS transistor
Preliminary specification
Supersedes data of 1999 July 01
2000 Feb 02
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF1047
FEATURES
PINNING - SOT541A
• High power gain
PIN
DESCRIPTION
• Easy power control
1
drain
• Excellent ruggedness
2
gate
• Source on underside eliminates DC isolators, reducing
common mode inductance
3
source, connected to flange
• Designed for broadband operation (HF to 1 GHz).
handbook, halfpage
1
APPLICATIONS
• Communication transmitter applications in the UHF
frequency range.
3
DESCRIPTION
2
Top view
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT541A) with a ceramic cap. The common source is
connected to the mounting flange.
MBK765
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
CW, class-AB (2-tone)
f1 = 960; f2 = 960.1
26
70 (PEP)
>14
>35
≤−26
CW, class-AB (1-tone)
960
26
70
>14
>45
−
MODE OF OPERATION
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Feb 02
2
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF1047
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
65
V
VGS
gate-source voltage
−
±20
V
ID
drain current (DC)
−
9
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-h
PARAMETER
CONDITIONS
Th = 25 °C, Pdis = 100 W;
note 1
thermal resistance from junction to heatsink
VALUE
UNIT
1.15
K/W
Note
1. Determined under specified RF operating conditions, based on maximum peak junction temperature.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 1.4 mA
65
−
−
V
VGSth
gate-source threshold voltage
VDS = 10 V; ID = 140 mA
4
−
5
V
IDSS
drain-source leakage current
VGS = 0; VDS = 26 V
−
−
10
µA
IDSX
drain cut-off current
VGS = VGSth + 9 V; VDS = 10 V
20
−
−
A
IGSS
gate leakage current
VGS = ±20 V; VDS = 0
−
−
250
nA
gfs
forward transconductance
VDS = 10 V; ID = 5 A
−
3
−
S
RDSon
drain-source on-state resistance
VGS = VGSth + 9 V; ID = 5 A
−
200
−
mΩ
Cis
input capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
−
75
−
pF
Cos
output capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
−
65
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
−
2.5
−
pF
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th = 25 °C; Rth j-h = 1.15 K/W, unless otherwise specified.
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
CW, class-AB (2-tone)
f1 = 960; f2 = 960.1
26
70 (PEP)
>14
>35
≤−26
CW, class-AB (1-tone)
960
26
70
>14
>45
−
MODE OF OPERATION
Ruggedness in class-AB operation
The BLF1047 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 26 V; f = 960 MHz at rated load power.
2000 Feb 02
3
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF1047
PACKAGE OUTLINE
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT541A
Package under
development
Philips Semiconductors reserves the
right to make changes without notice.
D
A
F
3
D1
U1
B
q
C
c
1
H
E1
p
U2
E
w1 M A M B M
A
2
w2 M C M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
5.74
4.60
11.05
10.80
0.18
0.10
15.39 15.39
15.09 15.09
inches
0.226
0.181
0.435 0.007
0.425 0.004
0.606 0.606
0.594 0.594
OUTLINE
VERSION
D
D1
F
H
p
Q
q
U1
U2
w1
w2
10.26 10.29
10.06 10.03
1.78
1.52
20.83
19.81
3.43
3.18
2.69
2.44
22.10
27.31
27.05
9.91
9.65
0.25
0.51
0.404 0.405
0.396 0.395
0.070 0.820
0.060 0.780
0.135
0.125
0.106
0.096
0.87
1.075
1.065
0.390
0.380
0.01
0.02
E
E1
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
99-12-28
00-01-13
SOT541A
2000 Feb 02
EUROPEAN
PROJECTION
4
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF1047
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Feb 02
5
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF1047
NOTES
2000 Feb 02
6
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF1047
NOTES
2000 Feb 02
7
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SCA 69
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Printed in The Netherlands
603516/04/pp8
Date of release: 2000
Feb 02
Document order number:
9397 750 06754