DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLF2043 UHF power LDMOS transistor Objective specification Supersedes data of 2000 Feb 17 2000 Feb 23 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2043 FEATURES PINNING - SOT538A • High power gain PIN DESCRIPTION • Easy power control 1 drain • Excellent ruggedness 2 gate • Source on mounting base eliminates DC isolators, reducing common mode inductance 3 source • Designed for broadband operation (HF to 2.2 GHz). 1 handbook, halfpage APPLICATIONS • Communication transmitter applications in the UHF frequency range. 3 DESCRIPTION 2 Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. Top view MBK905 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) dim (dBc) f1 = 2000; f2 = 2000.1 26 10 (PEP) >12 >30 ≤−26 MODE OF OPERATION CW, class-AB (2-tone) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 75 V VGS gate-source voltage − ±15 V ID drain current (DC) − 2.2 A Ptot total power dissipation − tbf W Tstg storage temperature Tmb ≤ 25 °C −65 +150 °C Tj junction temperature − 200 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2000 Feb 23 2 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2043 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT 5 K/W 0.4 K/W Tmb = 25 °C; note 1 Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink Note 1. Thermal resistance is determined under RF operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 0.2 mA 75 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 20 mA 4 − 5 V IDSS drain-source leakage current VGS = 0; VDS = 26 V − − 1.5 µA IDSX on-state drain current VGS = VGSth + 9 V; VDS = 10 V 3 − − A IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 40 nA gfs forward transconductance VDS = 10 V; ID = 0.75 A − 0.5 − S RDSon drain-source on-state resistance VGS = 10 V; ID = 0.75 A − 1.2 − Ω Cis input capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 11 − pF Cos output capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 9 − pF Crs feedback capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 0.5 − pF APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.4 K/W, unless otherwise specified. MODE OF OPERATION CW, class-AB (2-tone) f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) dim (dBc) f1 = 2000; f2 = 2000.1 26 25 10 (PEP) >12 >30 ≤−26 Ruggedness in class-AB operation The BLF2043 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 2000 MHz at rated load power. 2000 Feb 23 3 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2043 MGS999 MGT001 10 6 handbook, halfpage handbook, Z halfpage L (Ω) Zi (Ω) RL 4 8 2 xi 6 0 4 −2 2 −4 ri 0 1.8 XL 2 f (GHz) −6 1.8 2.2 2 f (GHz) VDS = 26 V; IDQ = 25 mA; PL = 10 W; Th ≤ 25 °C. Impedance measured at reference planes (see Fig.4). VDS = 26 V; IDQ = 25 mA; PL = 10 W; Th ≤ 25 °C. Impedance measured at reference planes (see Fig.4). Fig.2 Fig.3 Input impedance as a function of frequency (series components); typical values. handbook, halfpage reference planes Fig.4 MGT002 Measuring reference planes SOT538A. 2000 Feb 23 4 2.2 Load impedance as a function of frequency (series components); typical values. Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2043 PACKAGE OUTLINE Ceramic surface mounted package; 2 leads SOT538A Package under development D Philips Semiconductors reserves the right to make changes without notice. A 3 D1 D2 B c 1 L E2 H E1 E 2 α w1 M B M b Q 0 2.5 5 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 D2 E E1 E2 H L Q w1 α mm 2.95 2.29 1.35 1.19 0.23 0.18 5.16 5.00 4.65 4.50 5.41 5.00 4.14 3.99 3.63 3.48 4.14 3.99 7.49 7.24 2.03 1.27 0.10 0.00 0.25 7° 0° inches 0.116 0.090 0.053 0.047 0.009 0.007 0.203 0.197 0.183 0.177 0.213 0.197 0.163 0.157 0.143 0.137 0.163 0.157 0.295 0.285 0.080 0.050 0.004 0.000 0.010 7° 0° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-03-30 SOT538A 2000 Feb 23 EUROPEAN PROJECTION 5 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2043 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2000 Feb 23 6 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2043 NOTES 2000 Feb 23 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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