BIPOLARICS, INC. Part Number BRF504 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 10 GHz typ @ I C = 4mA t • DESCRIPTION AND APPLICATIONS: Bipolarics' BRF504 is a high performance silicon bipolar transistor intended for use in low noise application at VHF, UHF and microwave frequencies. High performance low noise performance can be realized at 2 mA or less making the BRF504 an excellent choice for battery application. From 4 mA to over 8mA, ft is nominally 10 GHz. Maximum recommended continuous current is 16 mA. A broad range of packages are offered including SOT-23, SOT-143, plastic and ceramic 0.085" Micro-X, 0.070" Stripline and unencapsulated dice. Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz • High Gain |S21| 2 = 18.1 dB @ 1 GHz 12.8 dB @ 2 GHz Absolute Maximum Ratings: SYMBOL • Dice, Plastic, Hermetic and Surface Mount packages available PERFORMANCE DATA: • Electrical Characteristics (TA = 25oC) SYMBOL PARAMETERS RATING VCBO Collector-Base Voltage VCEO VEBO IC CONT T J TSTG Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature PARAMETERS & CONDITIONS UNIT MIN. UNITS 10 V 10 1.5 8 200 -65 to 150 V V mA o C o C TYP. MAX. VCE =8V, I C = 4 mA unless stated f t |S 21 | 2 Gain Bandwidth Product Insertion Power Gain: GHz 10 f = 1.0 GHz, I C = 4 mA IC = 8 mA f = 2.0 GHz, I C = 4mA I C = 8 mA 17.5 18.1 12.8 12.6 P1d B Power output at 1dB compression: f = 1.0 GHz dBm 10 G1d B Gain at 1dB compression: f = 1.0 GHz dBm 15 NF Noise Figure: VCE =8V, I C = 0.8mA f = 1.0 GHz ZS = 50Ω dB hFE Forward Current Transfer Ratio: VCE = 8V, IC = 4 mA f = 1MHz ICBO IEBO C CB Collector Cutoff Current : VCB =8V Emitter Cutoff Current : VEB =1V Collector Base Capacitance: VCB = 8V f = 1MHz 1.6 50 100 250 µA 0.2 µA 1.0 pF 0.07