PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M23 OUTLINE DIMENSIONS (Units in mm) FEATURES • PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: – World's smallest transistor package footprint — leads are completely underneath package body – Low profile/0.55 mm package height – Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: NF = 1.4 dB 0.25 1 0.4 1.0 • 0.5 2 DESCRIPTION 0.15 0.6 0.2 0.15 BOTTOM VIEW 0.55 The NE681M23 transistor is ideal for low noise, high gain, and low cost amplifier applications. NEC's new low profile/ ceramic substrate style "M23" package is ideal for today's portable wireless applications. The NE681 is also available in chip, Micro-x, and six different low cost plastic surface mount package styles. 0.25 3 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS NE681M23 2SC5650 M23 UNITS MIN GHz 4.5 fT Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz dB |S21E|2 TYP 7 1.4 10 MAX 2.7 12 hFE2 Forward Current Gain at VCE = 3 V, IC = 7 mA ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.8 CRE3 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF 0.9 80 145 0.8 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE681M23 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 10 VEBO Emitter to Base Voltage V 1.5 IC Collector Current mA 65 PT Total Power Dissipation mW TBD TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 80 VCE = 2 V Collector Current, IC (mA) SYMBOLS Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 60 40 20 0 0 TYPICAL PERFORMANCE CURVES (TA = 25°C) 20 40 60 80 120 Base to Emitter Voltage, VCE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 100 IB 70 µA step VCE = 2 V 80 700 µA 60 350 µA 40 DC Current Gain, hFE Collector Current, IC (mA) 100 100 20 IB = 70 µA 10 0 0 3 6 9 0.1 12 Collector to Emitter Voltage, VCE (V) GAIN BANDWIDTH PRODUCTvs. COLLECTOR CURRENT 10.0 100.0 NOISE FIGURE/ASSOCIATED GAIN vs. COLLECTOR CURRENT 8 20 10 7 8 6 5 4 3 2 16 GA 6 12 4 8 2 4 Associated Gain, GA (dB) VCE = 3 V f = 1 GHz Noise Figure, NF (dB) Gain Bandwidth Product, fT (GHz) 1.0 Collector Current, IC (mA) 1 VCE = 3 V f = 1 GHz 0 1 NF 0 10 100 Collector Current, IC (mA) EXCLUSIVE NORTH AMERICAN AGENT FOR 0 1 10 100 Collector Current, IC (mA) RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 02/10/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE