BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V140 is a high performance silicon bipolar transistor intended for medium power linear and Class C applications at VHF, UHF and microwave frequencies in 7.2 and 12V systems. Depending on package type, the B15V140 can operate at up to 0.5W. These applications include high intermod receivers, CATV and instrumentation amplifiers as well as pre-drivers, drivers and final stages in transmitter applications such as cellular telephone. Package options include Dice, SOT-223 Surface Mount, Ceramic Micro-X, 0.145" Plastic SOT-103 and 0.230" power flange package. High Gain Bandwidth Product f = 8 GHz typ @ I C = 70 mA t • High Gain |S21| 2 = 15.6 dB @ 1.0 GHz 9.0 dB @ 2.0 GHz Absolute Maximum Ratings: • Dice, Plastic, Hermetic and Surface Mount packages available SYMBOL VCBO VCEO VEBO IC IC MAX T J (1) TSTG PERFORMANCE DATA: • Electrical Characteristics (TA = 25oC) PARAMETERS RATING UNITS Collector-Base Voltage 30 Collector-Emitter Voltage 15 Emitter-Base Voltage 1.5 Collector Current (continuous) 120 Collector Current (instantaneous) 180 Junction Temperature 200 Storage Temperature -65 to 150 V V V mA mA o C o C (1) Depends on package SYMBOL PARAMETERS & CONDITIONS UNIT MIN. TYP. MAX. VCE = 10V, I C =70 mA, Class A, unless stated f t Gain Bandwidth Product GHz 8.0 |S 21 | 2 Insertion Power Gain: f = 1.0 GHz f = 2.0 GHz dB dB 15.6 9.0 P1d B Power output at 1dB compression: f = 1.0 GHz IC = 75 mA dBm 27.0 NF Noise Figure: VCE =8V, I C =20 mA f = 1.0 GHz dB 1.6 hFE Forward Current Transfer Ratio: VCE = 8V, IC =15 mA ICBO Collector Cutoff Current : VCB =10V C CB Collector Base Capacitance: VCB =10V 30 100 µA f = 1MHz pF 300 0.4 .75 PAGE 2 BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR TYPICAL S PARAMETERS: VCE = 3.3 V, IC = 75 mA FREQ. S21 GHz dB Mag 0.20 24.00 15.84 0.50 18.20 8.12 1.00 12.00 3.98 1.50 8.80 2.75 2.00 6.20 2.04 2.50 4.30 1.64 3.00 2.70 1.36 3.50 1.70 1.21 4.00 0.00 1.00 TA =25O (Note: S-parameters were taken in a 35 package.) S12 S11 S22 Mag Ang Mag Ang Mag 0.0233 54 0.5370 -162 0.1927 0.0380 64 0.6683 178 0.1412 0.0691 72 0.7161 176 0.1513 0.1011 74 0.6760 159 0.1840 0.1364 74 0.6606 152 0.2371 0.1621 74 0.7413 145 0.2985 0.1883 73 0.7585 142 0.3388 0.2213 70 0.8035 133 0.3981 0.2454 69 0.7498 131 0.5128 Ang -103 -141 -141 -141 -145 -153 -146 -151 -153 TA =25O (Note: S-parameters were taken in a 35 package.) S12 S11 S22 Mag Ang Mag Ang Mag 0.0177 49 0.5688 -161 0.1995 0.0301 62 0.7079 -179 0.1318 0.0346 67 0.6839 173 0.1161 0.0457 72 0.6683 174 0.1288 0.0543 76 0.6839 174 0.1035 0.0660 76 0.6606 162 0.1230 0.0822 76 0.6531 153 0.1230 0.1148 78 0.6760 149 0.1584 0.1412 80 0.7328 133 0.2851 0.1949 78 0.8317 120 0.3507 0.2238 76 0.8222 120 0.4786 Ang -72 -98 -102 -106 -100 -104 -114 -116 -134 -140 -142 TA =25O (Note: S-parameters were taken in a 35 package.) S12 S11 S22 Mag Ang Mag Ang Mag 0.0239 42 0.5821 -146 0.3801 0.0263 48 0.7585 -168 0.2884 0.0354 52 0.7244 -179 0.2600 0.0426 56 0.7413 179 0.2600 0.0467 64 0.7943 176 0.2371 0.0543 65 0.7585 166 0.2630 0.0602 67 0.7161 159 0.2630 0.0691 68 0.7585 156 0.2691 0.0724 70 0.7585 154 0.2884 0.0794 71 0.7585 150 0.2851 0.0841 71 0.7852 141 0.3235 0.0870 74 0.7673 138 0.3054 0.0954 73 0.8222 134 0.3630 0.1000 73 0.8222 132 0.3589 0.1109 76 0.8511 130 0.3935 0.1148 73 0.8317 126 0.4315 0.1216 75 0.8413 126 0.3845 0.1318 75 0.9120 118 0.4677 0.1303 74 0.8128 115 0.4216 0.1462 76 0.8709 119 0.4415 0.1479 72 0.8609 112 0.4518 Ang - 86 -122 -134 -145 -147 -152 -154 -158 -163 -165 -177 -176 180 175 180 172 171 165 159 170 156 ZO = 50.0Ω Ang 109 90 78 68 58 48 44 34 29 VCE = 6 V, FREQ. GHz 0.20 0.40 0.60 0.80 1.00 1.20 1.50 2.00 2.50 3.50 4.00 IC = 80 mA S21 dB Mag 24.75 17.27 21.40 11.74 17.40 7.41 15.30 5.82 13.40 4.67 11.90 3.93 9.80 3.09 7.30 2.31 5.40 1.86 2.7 1.36 0.9 1.10 ZO = 50.0Ω VCE = 8 V, FREQ. GHz 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.20 2.40 2.60 2.80 3.00 3.20 3.40 3.60 3.80 4.00 4.20 IC = 35 mA S21 dB Mag 24.5 16.78 21.8 12.30 18.3 8.222 16.2 6.456 14.1 5.069 12.8 4.365 11.4 3.715 10.4 3.311 10.0 3.162 8.4 2.630 7.5 2.371 6.6 2.137 6.1 2.018 5.2 1.819 4.9 1.757 3.9 1.566 3.4 1.479 3.1 1.428 2.1 1.273 2.0 1.258 1.0 1.122 ZO = 50.0Ω Ang 110 94 85 81 77 72 66 57 48 34 26 Ang 126 104 92 86 83 76 70 68 65 61 55 55 50 47 45 40 41 33 33 35 26 PAGE 3 BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR TYPICAL S PARAMETERS: VCE = 8 V, IC = 75 mA FREQ. S21 GHz dB Mag 0.20 25.0 17.78 0.40 21.6 12.02 0.60 18.4 8.317 0.80 16.2 6.456 1.00 14.2 5.128 1.20 12.8 4.365 1.40 11.4 3.715 1.60 10.1 3.198 1.80 9.1 2.851 2.00 8.2 2.570 2.20 6.9 2.213 2.40 6.0 1.995 2.60 5.5 1.883 2.80 4.6 1.698 3.00 4.3 1.640 3.20 3.6 1.513 3.40 3.0 1.412 3.60 2.7 1.364 3.80 1.5 1.188 4.00 1.8 1.230 4.20 0.6 1.071 VCE = 8 V, IC = 75 mA FREQ. GHz 0.20 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 dB 25.60 20.0 15.60 12.20 9.0 8.0 6.80 4.40 1.60 S21 Mag 19.05 10.0 6.02 4.07 2.82 2.51 2.23 1.66 1.20 VCE = 8 V, IC = 80 mA FREQ. GHz 0.20 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 dB 26.80 19.80 14.00 11.00 8.70 6.20 5.80 5.00 4.60 S21 Mag 21.87 9.77 5.01 3.54 2.72 2.04 1.95 1.77 1.69 TA =25OC (Note: S-parameters were taken in a 35 package.) S12 S11 S22 Mag Ang Mag Ang Mag 0.0169 46 0.6456 -156 0.3090 0.0229 54 0.8128 -136 0.2630 0.0288 62 0.7843 176 0.2511 0.0371 68 0.7952 174 0.2600 0.0426 72 0.7943 172 0.2371 0.0506 73 0.7943 162 0.2630 0.0575 73 0.7478 156 0.2630 0.0630 74 0.7943 154 0.2722 0.0707 77 0.7762 151 0.2884 0.0794 77 0.7673 148 0.2851 0.0860 75 0.7852 139 0.3235 0.0891 78 0.7762 136 0.3090 0.1000 77 0.8222 132 0.3845 0.1047 77 0.8222 131 0.4265 0.1109 79 0.8413 129 0.4073 0.1174 76 0.8317 128 0.4073 0.1244 78 0.8413 125 0.3801 0.1348 75 0.9120 117 0.4677 0.1303 76 0.8128 114 0.4168 0.1462 79 0.8709 118 0.4365 0.1479 74 0.8609 111 0.4415 ZO = 50.0Ω Ang 124 102 92 87 83 78 72 70 66 63 58 59 54 51 49 45 46 37 17 18 30 ZO = 50.0Ω TA =25OC (Note: S-parameters were taken in a 23 package.) S12 Ang 106 85 66 46 20 14 -54 -79 -90 ZO = 50.0Ω Mag 0.0151 0.0208 0.0446 0.0676 0.0776 0.0562 0.1258 0.0891 0.0794 S11 Ang -12 20 58 68 30 -38 -36 -30 -64 Mag 0.5128 0.4731 0.5011 0.4518 0.4027 02238 0.6309 0.6025 0.3548 S22 Ang -147 174 168 121 87 21 -1 -23 -65 Mag 0.3090 0.3162 0.5623 0.3198 0.6095 0.5128 0.6683 0.7413 0.7585 Ang -102 -109 -149 4 163 160 94 44 48 TA =25OC (Note: S-parameters were taken in a -18 package.) S12 Ang 100 80 60 50 35 35 9 -2 -14 Ang -102 -136 -145 -155 -155 -159 -169 -164 -168 -168 178 180 176 172 177 169 168 162 156 167 -154 Mag 0.0199 0.0431 0.0841 0.1258 0.1778 0.2344 0.3019 0.3630 0.4731 S11 Ang 66 70 71 72 65 62 56 48 35 Mag 0.4216 0.5688 0.5011 0.4168 0.3162 0.2511 0.2113 0.2018 0.2290 S22 Ang -160 175 157 146 120 94 56 0 -60 Mag 0.2691 0.1972 0.3162 0.5308 0.6760 0.7673 0.6165 0.6918 0.5888 Ang -78 -98 -106 -111 -128 -139 -155 -158 -160 PAGE 4 BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR 85 Package: Micro-X 85 Mil Ceramic 70 Package: 70 Mil Stripline 5.0 MIN (ALL LEADS) 0.5+0.07 45 1.0+0.1 +0.06 0.1 -0.03 2.5 +0.4 -0.2 +0.4 -0.3 1.3 23 Package: 0.230" BeO Flange LEAD 10 Package 14, 85, 86, 35 1 Emitter 2 Base 3 Emitter Base Emitter Collector 4 Collector Emitter & 04 Package NOTES: (unless otherwise specified) in 1. Dimensions are ( mm ) 2. Tolerances: in .xxx = ± .005 mm .xx = ± .13 3. All dimensions nominal; subject to change without notice PAGE 5 BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR 43 Package: SOT-143 22 Package: SOT-223 02 Package: SOT-23 02 Package: SOT-23J 0.30 0.51 1.39 1.57 0.45 0.60 0.95 1.90 2.65 3.04 0.00 0.10 0.79 1.1 0.10 0.45 0.60 2.25 2.75 PAGE 6 BIPOLARICS, INC. Part Number B15V140 MIDIUM POWER SILICON MICROWAVE TRANSISTOR 86 Package: 0.08" Plastic Micro-X, Surface Mount 0.02 .51 87 Package: 0.085" Plastic Micro-X, Short Lead .020 .51 1 2 0.032+0.015 2.34+0.38 0.008+0.002 0.203+0.051 4 4 1 0.106+0.015 2.67+0.38 3 3 2 .020+.010 0.51+.25 .60+0.10 1.52+.26 .065 2.15 .008+.002 .20+.050 5 0.026+0.001 0.66+0.13 0.085+0.005 2.16+0.13 0.060+0.01 1.52+0.25 .020 .51 85 Package:0.085" Plastic Micro-X .215+.010 5.46+.25 04 Package: 0.145" Plastic Macro-X PAGE 7 BIPOLARICS, INC. Part Number B15V140 MIDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET 08 Ceramic SO8 Package 0.086 (2.184) Emitter .020 (.508) Emitter Collector Base .070 (1.778) Collector Base Emitter Emitter .050 (1.27) .160 (4.064) .190 (4.826) NOTES: (unless otherwise specified) in 1. Dimensions are (mm) 2. Tolerances: in .xxx = ± .005 mm .xx = ± .13 3. All dimensions nominal; subject to change without notice BIPOLARICS, INC. 46766 Lakeview Blvd. Fremont, CA 94538 Phone: (510) 226-6565 FAX: (510) 226-6765