BIPOLARICS, INC Part Number BMT1417B26 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base, Class C Package Configuration • High Output Power 26 W @ 1.4 to 1.7 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 4.16 A t • High Gain GPE = 7.0 dB to 8.2 dB • High Reliability Gold Metallization Nitride Passivation • Diffused Ballast Resistors • BeO Packaging • Built-In Matching Network Absolute Maximum Ratings: for Broadband Operation PERFORMANCE DATA: • Electrical Characteristics (TA = 25oC) SYMBOL SYMBOL PARAMETERS VCBO Collector-Base Voltage 50 V VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current (instantaneous) 28 3.5 4.16 V V A T Junction Temperature 200 o J RATING TSTG Storage Temperature θJC Thermal Resistance PARAMETERS & CONDITIONS UNIT -65 to 200 6.5 MIN. TYP. UNITS C o C C/W MAX. VCE =28V, I C =4.16 A, Class C P1dB Power output at 1 dB compression: f = 1.4 GHz W 26 η Collector Efficiency Class C % 50 hFE Forward Current Transfer Ratio: VCB = 5V, IC = 800 mA COB PT Output Capacitance: Total Power Dissipation f = 1 MHz, I E = 0 10 --- pF 24 W 52 100 PAGE 2 BIPOLARICS, INC. Part Number BMT1417B26 SILICON MICROWAVE POWER TRANSISTOR PAGE 3 BIPOLARICS, INC. Part Number BMT1417B26 SILICON MICROWAVE POWER TRANSISTOR PAGE 4 BIPOLARICS, INC. Part Number BMT1417B26 SILICON MICROWAVE POWER TRANSISTOR PAGE 5 BIPOLARICS, INC. Part Number BMT1417B26 SILICON MICROWAVE POWER TRANSISTOR 25 Package: 0.250" 2 Lead Flange NOTES: (unless otherwise specified) in 1. Dimensions are (mm) 2. Tolerances: in .xxx = ± .005 mm .xx = ± .13 3. All dimensions nominal; subject to change without notice LEAD 25 Package 1 Emitter 2 Base 3 4 Collector Base BIPOLARICS, INC. 602 Charcot Ave. San Jose, CA 95131 Phone: (408) 456-0430 FAX: (408) 456-0431