UM9701 Low Resistance, Low Distortion, RF Switching PIN Diode KEY FEATURES DESCRIPTION surfaces of the silicon chip. A glass enclosure houses this bond in a reliable and hermetic package. The axial leads are attached to refractory pins and do not touch the glass enclosure. Environmentally these, and all Microsemi PIN diodes, can withstand thermal cycling from -195 °C to + 300 °C and exceed all military environmental specifications for shock, vibration, acceleration, and moisture resistance. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com WWW . Microsemi .C OM The UM9701 PIN diode was designed for low resistance at low forward bias current and low reverse bias capacitance. This unique Microsemi design results in both forward and reverse bias. These PIN diodes are characterized for low current drain RF and microwave switch applications particularly for digital filter switch designs. The construction and geometry of these devices provide good voltage and power handling capability. These devices are constructed using a metallurgical full face bond to both Specified low distortion Low Forward Resistance High Reverse Resistance High Voltage Capability Good Power Handling Microsemi Ruggedness and reliability Compatible with automatic insertion equipment APPLICATIONS/BENEFITS Little or no Bias required. ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Symbol Value Unit Reverse Voltage AVERAGE Power Dissipation Free Air at 25 °C Average Power Dissipation ½ “ (12.7 mm) Total lead Length to 25 °C Contacts VR 100 Volts PA 500 mW PA 2.5 Derate linearly To 175 °C Watts Storage Temperature T stg -65 to 175 ºC Operating Temperature T op -65 to 175 ºC Available in leaded or surface mount packages. RoHS compliant packaging available: use UMX9701B, etc. UM9701 Copyright 2001 Rev. 0.02, 2006-04-27 Microsemi Page 1 UM9701 Low Resistance, Low Distortion, RF Switching PIN Diode Symbol UM9701 Series Resistance (MAX) Total Capacitance (MAX) Parallel Resistance (MIN) Carrier Lifetime (MIN) Reverse Current (MAX) Forward Voltage (MAX) RS CT RP τ IR VF 0.8 Ω 1.8 pF 100 kΩ 1.5 µs 10 µA 0.8 V Forward Bias Third Order IM Distortion (MAX) R 2ab/a -90 dB Reverse Bias Third Order IM Distortion (MAX) R 2ab/a -90 dB WWW . Microsemi .C OM Electrical Specifications Test Conditions F = 100 MHz, IF = 10 mA F = 1 MHz, VR = 50 V F = 100 MHz, VR = 50 V IF = 10 mA VR = 100 V IF = 10 mA IF = 10 mA PA = PB = +20 dBm fA = 43 MHz, fB = 44 MHz VR = 50 V PA = PB = +20 dBm fA = 43 MHz, fB = 44 MHz TYPICAL SERIES RESISTANCE VS FORWARD CURRENT F = 100 MHz 100 ELECTRICAL Rs SEREIES RESISTANCE (Ohms) 101 10-1 10 0 1 10 2 10 FORWARD CURRENT (mA) Copyright 2001 Rev. 0.02, 2006-04-27 Microsemi Page 2 UM9701 Low Resistance, Low Distortion, RF Switching PIN Diode WWW . Microsemi .C OM TYPICAL DC CHARACTERISTIC FORWARD CURRENT (mA) 102 101 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 FORWARD VOLTAGE (V) TYPICAL CAPACITANCE CHARACTERISTIC 5.0 Ct CAPACITANCE (pF) 4.5 4.0 3.5 1 MHz 3.0 10 MHz 2.5 20 MHz 2.0 100 MHz 1.5 1.0 ELECTRICAL 0.5 0.0 10-1 100 101 102 REVERSE VOLTAGE (V) Copyright 2001 Rev. 0.02, 2006-04-27 Microsemi Page 3 UM9701 Low Resistance, Low Distortion, RF Switching PIN Diode WWW . Microsemi .C OM TYPICAL PARALLEL RESISTANCE VS REVERSE VOLTAGE Rp PARALLEL RESISTANCE (Ohms) 6 10 F = 10 MHz----- ----F = 100 MHz F = 20 MHz-------- 105 --------F = 50 MHz 4 10 103 10-1 100 101 102 REVERSE VOLTAGE (V) 120 110 Third Oder 100 Second Order 90 80 70 60 P = 20 dBm per Channel 50 If = 10 mA 40 ELECTRICAL DISTORTION BELOW CARRIER (dB) TYPICAL FORWARD BIAS INTERMODULATION DISTORTION VERSUS NOMINAL CARRIER FREQUENCY 30 20 1 10 100 NOMINAL CARRIER FREQUENCY (MHz) Copyright 2001 Rev. 0.02, 2006-04-27 Microsemi Page 4 UM9701 Low Resistance, Low Distortion, RF Switching PIN Diode WWW . Microsemi .C OM DISTORTION BELOW CARRIER (dB) TYPICAL THIRD ORDER INTERMODULATION DISTORTION (R 2ab/a) VERSUS FORWARD BIAS CURRENT 120 Fa = 43 MHz 110 Fb = 44 MHz Fa = 7.4 MHz 100 Fb = 7.6 MHz 90 80 70 60 P = 20 dBm per Channel 50 40 30 20 1 10 100 FORWARD CURRENT (mA) FORWARD BIAS THIRD ORDER INTERMODULATION DISTORTION (R 2ab/a) VS INPUT POWER PER CHANNEL 100 F = 43 MHz 90 F = 44 MHz 80 F = 7.4 MHz 70 F = 7.6 MHz 60 50 40 ELECTRICAL DISTORTION BELOW CARRIER (dB) 110 30 20 0 10 20 30 40 INPUT POWER PER CHANNEL (dBm) Copyright 2001 Rev. 0.02, 2006-04-27 Microsemi Page 5 UM9701 Low Resistance, Low Distortion, RF Switching PIN Diode WWW . Microsemi .C OM DISTORTION BELOW CARRIER (dB) TYPICAL REVERSE BIAS INTERMODULATION DISTORTION 110 Third Order 100 90 Second Order 80 70 60 50 Fa = 43 MHz 40 Fb = 44 MHz 30 P = 20 dBm per Channel 20 1 10 50 REVERSE VOLTAGE (V) MECHANICAL Copyright 2001 Rev. 0.02, 2006-04-27 Microsemi Page 6 UM9701 Low Resistance, Low Distortion, RF Switching PIN Diode WWW . Microsemi .C OM NOTES Copyright 2001 Rev. 0.02, 2006-04-27 Microsemi Page 7