PIN Diodes for RF Switching and Attenuating Technical Data Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matrices, digital phase shifters, and time multiplex filters. The 5082-3188 is optimized for VHF/UHF bandswitching. The RF resistance of a PIN diode is a function of the current flowing in the diode. These current controlled resistors are specified for use in control applications such as variable RF attenuators, automatic gain control circuits, RF modulators, electrically tuned filters, analog phase shifters, and RF limiters. Outline 15 diodes are available on tape and reel. The tape and reel specification is patterned after RS-296-D. 1N5719 1N5767 5082-3001 5082-3039 5082-3077 5082-3080/81 5082-3188 5082-3379 0.41 (.016) 0.36 (.014) 25.4 (1.00) MIN. 1.93 (.076) 1.73 (.068) 4.32 (.170) 3.81 (.150) CATHODE 25.4 (1.00) MIN. DIMENSIONS IN MILLIMETERS AND (INCHES). Outline 15 Maximum Ratings Junction Operating and Storage Temperature Range ................................................ -65°C to +150°C Power Dissipation 25°C ..................................................................... 250 mW (Derate linearly to zero at 150°C) Peak Inverse Voltage (PIV) ........................................................ same as VBR Maximum Soldering Temperature ....................................... 260°C for 5 sec 2 Mechanical Specifications The HP Outline 15 package has a glass hermetic seal with dumet leads. The lead finish is 95-5 tinlead (SnPb) for all PIN diodes. The leads on the Outline 15 package should be restricted so that the bend starts at least 1/16 inch (1.6 mm) from the glass body. Typical package inductance and capacitance are 2.5 nH and 0.13 pF, respectively. Marking is by digital coding with a cathode band. General Purpose Diodes Electrical Specifications at TA = 25°C Part Number 5082- Maximum Total Capacitance CT (pF) Minimum Breakdown Voltage VBR (V) General Purpose Switching and Attenuating 3001 0.25 200 3039 0.25 150 1N5719 0.3** 150 3077 0.3 200 Band Switching 3188 1.0* 35 Test VR = 50 V VR = VBR Conditions *VR = 20 V Measure **VR = 100 V IR ≤ 10 mA f = 1 MHz Maximum Residual Series Resistance RS (Ω) Effective Carrier Reverse Recovery Lifetime Time τ (ns) trr (ns) 1.0 1.25 1.25 1.5 100 (min.) 100 (min.) 100 (min.) 100 (min.) 100 (typ.) 100 (typ.) 100 (typ.) 100 (typ) 0.6** IF =100 mA *IF = 20 mA **IF = 10 mA f = 100 MHz 70 (typ.)* IF = 50 mA IR = 250 mA *IF = 10 mA *IR = 6 mA 12 (typ.) IF = 20 mA VR = 10 V 90% Recovery Notes: Typical CW power switching capability for a shunt switch in a 50 Ω system is 2.5 W. Part marking on glass package diodes, outline 15 is: 5082-xxxx HPx xxx yww For example, 1N5767 made in 1996 work week 35 would be marked: HP5 767 635 3 RF Current Controlled Resistor Diodes Electrical Specifications at TA = 25°C Max. Effective Min. Residual Max. Carrier Breakdown Series Total Lifetime Voltage Resistance Capacitance t (ns) VBR (V) RS (Ω) CT (pF) 1300 (typ.) 100 2.5 0.4 1300 (typ.) 100 2.5 0.4 1300 (typ.) 50 0.4 2500 (typ.) 100 3.5 0.4 Part Number 5082-3080 1N5767* 5082-3379 5082-3081 Test IF = 50 mA VR = VBR, IF = 100 mA Conditions IR = 250 mA Measure f = 100 MHz IR ≤ 10 mA High Resistance Limit, RH (W) Min. 1000 1000 Low Resistance Limit, RL (W) Max. Min. 1500 VR = 50 V f = 1 MHz IF = 0.01 mA f = 100 MHz Max. 8** 8** 8** 8** Max. Difference in Resistance vs. Bias Slope, Dc IF = 1.0 mA Batch IF = 20 mA** Matched at f = 100 MHz IF = 0.01 mA and 1.0 mA f = 100 MHz τ = 1.0 msec minimum IR = 1 µA maximum at VR = 50 V VF = 1 V maximum at IF = 100 mA. *The 1N5767 has the additional specifications: Typical Parameters at TA = 25°C (unless otherwise noted) 10 1 125°C 25°C –60°C 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 VF – FORWARD VOLTAGE (V) Figure 1. Forward Current vs. Forward Voltage. 1.2 100,000 1000 RF RESISTANCE (OHMS) 10,000 5082-3001, 3039, 3077, 3080 IN5719 RF RESISTANCE (OHMS) IF – FORWARD CURRENT (mA) 100 5082-3001 5082-3039 5082-3077 IN5719 100 10 1 0.1 0.001 0.01 0.1 1 10 100 10,000 1000 5082-3081 100 5082-3080 5082-3379 10 1 0.001 0.01 0.1 1 10 100 IF – FORWARD BIAS CURRENT (mA) IF – FORWARD BIAS CURRENT (mA) Figure 2. Typical RF Resistance vs. Forward Bias Current. Figure 3. Typical RF Resistance vs. Forward Bias Current. Typical Parameters at TA = 25°C (cont.) 1000 2.5 REVERSE RECOVERY TIME (ns) 1.0 CAPACITANCE (pF) CAPACITANCE (pF) 2.0 .5 5082-3039 IN5719 1.5 1.0 5082-3188 .5 5082-3080 5082-3081 5082-3379 5082-3001 0 0 0 10 20 30 40 50 60 70 0 10 REVERSE VOLTAGE (V) BELOW FIRST ORDER (dB) BELOW FIRST ORDER (dB) 10 20 40 5082-3080 5082-3379 80 50 60 5082-3081 100 VR = 5V VR = 10V VR = 20V 10 70 0 10 20 30 FORWARD CURRENT (mA) Figure 6. Typical Reverse Recovery Time vs. Forward Current for Various Reverse Driving Voltages. Figure 5. Typical Capacitance vs. Reverse Voltage. 10 dB Bridged Tee Attenuator 40 dB mV Output Levels One Input Frequency Fixed 100 MHz 60 40 30 REVERSE VOLTAGE (V) Figure 4. Typical Capacitance vs. Reverse Voltage. 0 20 5082-3001 3039 3077 IN5719 PIN Diode Cross Modulation 10 dB Bridged Tee Attenuator Unmodulated Frequency 100 MHz 20 30 100% Modulation 15 kHz 40 dB mV Output Levels 40 50 5082-3080 5082-3379 60 70 5082-3081 80 100 0 10 20 30 40 50 60 70 FREQUENCY (MHz) Figure 7. Typical Second Order Intermodulation Distortion. 80 0 10 20 30 40 50 60 70 80 MODULATED FREQUENCY (MHz) Figure 8. Typical Cross Intermodulation Distortion. www.hp.com/go/rf For technical assistance or the location of your nearest Hewlett-Packard sales office, distributor or representative call: Americas/Canada: 1-800-235-0312 or 408-654-8675 Far East/Australasia: Call your local HP sales office. Japan: (81 3) 3335-8152 Europe: Call your local HP sales office. Data subject to change. Copyright © 1998 Hewlett-Packard Co. Obsoletes 5966-0941E Printed in U.S.A. 5967-5812E (5/98)