MICROSEMI UM9608

UM9601 – UM9608
FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
C
O S O S
AND MICROWAVE APPLICATIONS
KEY FEATURES
DESCRIPTION
The Microsemi UM9601 series PIN diodes are
constructed using a fused-in-glass which results in
a highly reliable, hermetic package. The process
utilizes symmetrical, full faced metallurgical
bonds to both surfaces of the silicon chip. This
construction greatly minimizes the normal
parasitic inductance and capacitance found in
conventional glass or ceramic packaged diodes
which employ straps, springs, or whiskers.
The use of discrete UM9601-UM9608 diodes
greatly minimizes handling problems commonly
associated with passivated PIN diode chips while
maintaining good microwave performance. In
addition the power handling capability of the
UM9601-UM9608 series is considerably higher
than PIN diode chips can provide.
Environmentally, the UM9601-9608 series PIN
diodes can withstand thermal cycling from -195 oC
to +300 oC and exceed all military environmental
specifications for shock, vibration, acceleration,
and moisture.
ƒ Low Inductance Shunt Mount
Package
ƒ Characterized for Microstrip
ƒ Microsemi Ruggedness and
Reliability
ƒ High Power Handling Capability
ƒ Low Bias Current Requirement
ƒ Excellent Distortion Properties
WWW . Microsemi .C OM
Description
The UM9601-UM9608 series of PIN diodes
was developed for shunt mount applications in
microstrip circuits. Good switch performance
is demonstrated at frequencies from UHF to 4
GHz and higher. This performance is achieved
using discrete low inductance Microsemi PIN
diodes assembled with special hardware to
permit good electrical and mechanical
compatibility with microstrip transmission
lines.
Design information is presented for
preparation of microstrip circuit boards to
accommodate these PIN diodes. A detailed
design for a 900 MHz quarter-wave antenna
switch is given. This switch which employs a
low cost UM9401 axial leaded PIN diode in
conjunction with a UM9601 performs with 30
dB receiver isolation over a 100 MHz
bandwidth and with a transmitter insertion
loss of less than 0.4 dB. This switch can safely
handle transmitter power levels up to 100
watts at infinite SWR.
ƒ Cost Effective in High Quantity
Applications
APPLICATIONS/BENEFITS
ƒ RoHS compliant packaging
available: use UMX9601, etc.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Copyright  2005
Rev. 0, 2006-01-17
Microsemi
Page 1
UM9601 SERIES
Typical Microwave Performance
UM9601-9604
UM9605-UM9608
SPST
SPST
SPNT*
SPST
SPST
SPNT*
Insertion Loss
Isolation
Isolation
Insertion Loss
Isolation
Isolation
Frequency
0 Bias
100 mA
100 mA
0 Bias
100 mA
100 mA
GHz
dB
dB
dB
dB
dB
dB
0.5
0.20
30
36
0.20
25
31
1.0
0.25
26
32
0.20
22
28
1.5
0.35
22
28
0.20
20
26
2.0
0.50
18
24
0.25
17
22
3.0
1.00
15
21
0.25
15
21
4.0
1.50
13
19
0.40
14
20
* Performance based on SPST Measurements in 0.025” (0.635mm) Microstrip Test Circuit.
Note: All dimensions in inches and (millimeters).
UM9601 – UM9608
FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
C
O S O S
AND MICROWAVE APPLICATIONS
Peak Power
1 µs Single Pulse
at 25 oC Ambient
25 kW
Operating and
Storage Temperature
100 V
UM9601
UM9603
UM9605
UM9607
UM9605-UM9608
PD
θ
4W
37.5 oC/W
0.5 W
WWW . Microsemi .C OM
Flange @ 25 oC
Free Air
Maximum Ratings
UM9601-UM9604
PD
θ
7.5 W
20 oC/W
1.5 W
10 kW
-65 oC to +175 oC
Reverse Voltage Ratings @ 10 µA
400 V
UM9602
UM9604
UM9606
UM9608
Electrical Specifications (at 25 oC)
Test
Series
Resistance
Symbol
Rs
Rp
Total
Capacitance
CT
Carrier
Lifetime
τ
Forward
Voltage
VF
I-Region
Width
W
UM9601-UM9604
Typ
Max
0.4
Min
0.6
100k
UM9605-UM9608
Typ
Max
1.5
1.7
150k
1.2
2.0
0.5
1.0
0.85
0.95
80
150
Microsemi
Units
Ω
Condition
IF = 100 mA
F = 100 MHz
Ω
Vr = 100 V
F = 100 MHz
pF
Vr = 100 V
F = 1 MHz
µs
If = 10 mA
V
IF = 100 mA
µm
Page 2
ELECTRICALS
Parallel
Resistance
Copyright  2005
Rev. 0, 2006-01-17
Min
UM9601 – UM9608
FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
C
O S O S
AND MICROWAVE APPLICATIONS
Applications
1. High isolation switches to 2 GHz at low drive
2. Quarter-wave antenna switches to 100 watts
3. Priced for high volume commercial applications
High voltage rating version of UM9601 and UM9603
Respectively for peak power handling to 3 kW
1. Low insertion loss switches to 4 GHz
2. Low distortion attenuator applications
High voltage version of UM9605 and UM9607
For peak power handling to 10 kW
WWW . Microsemi .C OM
Selection Guide
The following chart serves as a general guide for indicating the most likely diode from the series for a given application.
Recommended Types
UM9601 (Affixes to microstrip ground plane)
UM9603 (Affixes to microstrip backing plate)
UM9602
UM9604
UM9605 (Affixes to microstrip ground plane)
UM9607 (Affixes to microstrip backing plate)
UM9606
UM9608
DIODE RESISTANCE vs DIODE CURRENT
TYPICAL
105
F = 100 MHz
104
Rs (Ohms)
103
UM9605 - UM9608
102
UM9601 - UM9604
1
10
0
10
ELECTRICALS
10
-1
10
-6
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
If (mA)
Copyright  2005
Rev. 0, 2006-01-17
Microsemi
Page 3
UM9601 – UM9608
FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
C
O S O S
AND MICROWAVE APPLICATIONS
PULSE THERMAL IMPEDANCE (C/W)
WWW . Microsemi .C OM
PULSE THERMAL IMPEDANCE
TYPICAL
104
103
102
UM9605 - UM9608
101
UM9601 - UM9604
100
10-1
10-6
10-5
10-4
10-3
10-2
10-1
100
PULSE WIDTH (sec)
Rp VERSUS VOLTAGE AND FREQUENCY
UM9601 - UM9604
3
10
F=100 MHz
102
F=500 MHz
F=1 GHz
101
ELECTRICALS
PARALLEL RESISTANCE (kOhms))
TYPICAL
F=3 GHz
100
100
101
102
103
REVERSE VOLTAGE (V)
Copyright  2005
Rev. 0, 2006-01-17
Microsemi
Page 4
UM9601 – UM9608
FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
C
O S O S
AND MICROWAVE APPLICATIONS
WWW . Microsemi .C OM
POWER RATING
TYPICAL
PD MAX POWER DISSIPATION (W)
12
10
UM9601 - UM9604
8
6
4
2
UM9605 - UM9608
0
0
25
50
75
100
125
150
175
HEAT SINK TEMPERATURE (C)
Rp vs VOLTAGE AND FREQUENCY
UM9605-UM9608
100 MHz
TYPICAL
2
10
500 MHz
1 GHz
ELECTRICALS
PARALLEL RESISTANCE (kOhms)
103
3 GHz
101
0
10
0
10
1
10
2
10
3
10
REVERSE VOLTAGE (Vr)
Copyright  2005
Rev. 0, 2006-01-17
Microsemi
Page 5
UM9601 – UM9608
FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
C
O S O S
AND MICROWAVE APPLICATIONS
WWW . Microsemi .C OM
DISTORTION BELOW CARRIER (dB)
FORWARD BIAS INTERMODULATION DISTORTION VERSUS
NOMINAL CARRIER FREQUENCY AT 20 dBm PER CHANNEL
TYPICAL
120
110
SECOND ORDER
100
90
80
70
THIRD ORDER
60
50
If = 10 mA
40
100
101
102
F (MHz)
TYPICAL
120
110
Fa = 43 MHz Fb = 44 MHz
100
90
Fa = 7.4 MHz Fb = 7.6 MHz
80
ELECTRICALS
DISTORTION BELOW CARRIER (dB)
THIRD ORDER INTERMODULATION DISTORTION VERSUS
FORWARD BIAS CURRENT AT 20 dBm PER CHANNEL
70
60
50
40
0
10
1
10
2
10
If (mA)
Copyright  2005
Rev. 0, 2006-01-17
Microsemi
Page 6
UM9601 – UM9608
FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
C
O S O S
AND MICROWAVE APPLICATIONS
WWW . Microsemi .C OM
DISTORTION BELOW CARRIER (dBm)
TYPICAL FORWARD BIAS THIRD ORDER INTERMODULATION
DISTORTION vs INPUT POWER PER CHANNEL
110
R 2ab/a
100
Fa = 43 MHz
90
Fb = 44 MHz
80
Fa = 7.4 MHz
70
Fb = 7.6 MHz
60
50
40
30
20
0
10
20
30
40
INPUT POWER PER CHANNEL (dBm)
REVERSE BIAS INTERMODULATION DISTORTION
TYPICAL
100
THIRD ORDER
90
SECOND ORDER
80
70
ELECTRICALS
DISTORTION BELOW CARRIER (dB)
110
60
Fa = 43 MHz
50
Fb = 44 MHz
P = 20dBm PER CHANNEL
40
30
20
1
10
50
REVERSE VOLTAGE (Vr)
Copyright  2005
Rev. 0, 2006-01-17
Microsemi
Page 7
UM9601 – UM9608
FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
C
O S O S
AND MICROWAVE APPLICATIONS
WWW . Microsemi .C OM
UM9601 UM9602
UM9603 UM9604
UM9605 UM9606
UM9607 UM9608
MECHANICAL
Copyright  2005
Rev. 0, 2006-01-17
Microsemi
Page 8
UM9601 – UM9608
FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
C
O S O S
AND MICROWAVE APPLICATIONS
WWW . Microsemi .C OM
Microwave Characterization
The UM9601-UM9608 series has been designed and
characterized as shunt switch elements at frequencies to 4 GHz
in microstrip circuits. Performance curves are given which
demonstrate switch performance in 0.025” (.635mm) alumina
microstrip.
The performance data were derived by evaluating externally
biased microstrip circuits in which a UM9601 diode was
installed. Each circuit consisted of a 1 inch length of 50 Ohm
nominal impedance 0.025” (.635mm) thick alumina microstrip
and two SMA connectors. The data shown include the board
and connector loss. Measurements performed using 00.050”
(1.27mm) alumina substrates show similar performance at
frequencies to1.5 GHz
Copyright  2005
Rev. 0, 2006-01-17
These circuits simulate SPST switches. Many designs
require multi-throw switches. It is important to recognize that a
multi-throw switch will have 6dB higher isolation than
indicated for SPST switches. Also, a multi-throw switch using
shunt mounted PIN diodes require the diodes be placed a
quarter-wavelength from the common port.
A further improvement in switch performance may be
achieved by using 2 shunt PIN diodes in each arm spaced a
quarter-wavelength from each other. In this case the isolation of
each section will be twice the dB value of the switch. The
insertion loss due to the diodes should be less than twice the
insertion loss of an SPST section due to the transforming effect
of the quarter-wave line on the capacitance of a single diode.
Microsemi
Page 9
UM9601 – UM9608
FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
C
O S O S
AND MICROWAVE APPLICATIONS
WWW . Microsemi .C OM
ISOLATION vs FREQUENCY .025" (.635mm) ALUMINA
MICROSTRIP SPST SWITCH DIODE CURRENT = 100 mA
TYPICAL
1.6
1.4
ISOLATION (dBm)
1.2
UM9601 - UM9604
1.0
0.8
0.6
0.4
UM9605 - UM9608
0.2
0.0
0
1
2
3
4
5
6
FREQUENCY (GHz)
ISOLATION vs FREQUENCY .025" (.635mm) ALUMINA
MICROSTRIP SPST SWITCH DIODE CURRENT = 100 mA
TYPICAL
30
ISOLATION (dBm)
25
UM9601 - UM9604
20
15
UM9605 - UM9608
10
5
0
0
1
2
3
4
FREQUENCY (GHz)
Copyright  2005
Rev. 0, 2006-01-17
Microsemi
Page 10
UM9601 – UM9608
FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
C
O S O S
AND MICROWAVE APPLICATIONS
WWW . Microsemi .C OM
ISOLATION vs FREQUENCY AND DIODE CURRENT
0.025" (0.635mm) ALUMINA MICROSTRIP SPST SWITCH
TYPICAL
28
UM9601 - UM9604
26
1 GHz
24
ISOLATION (dB)
UM9605 - UM9608
22
20
UM9601 - UM9604
18
3 GHz
16
UM9605 - UM9608
14
12
10
8
6
10
100
1000
DIODE CURRENT (mA)
Installation in Microstrip
The cup type flange on the UM9601, UM9602, UM9605, and
UM9606 is designed to be affixed to the ground plane surface
of a microstrip board. The UM9603, UM9604, UM9607, and
UM9608 were designed to be affixed to a backing plate as
shown. It was experimentally determined that at frequencies
greater than 2 GHz the anode of the diode should be
approximately 0.010” (.254mm) above the top surface of the
microstrip for lowest insertion loss.
Figure: UM9601/UM9602 Microstrip Mount
Copyright  2005
Rev. 0, 2006-01-17
Microsemi
Page 11
MECHANICAL
Design Example – 900 MHz Antenna Switch
An example of a practical circuit design using a UM9601
diode is a quarter-wave antenna switch covering the frequency
of 800-900 MHz. The circuit design for this switch is shown
and was constructed using 0.025” (0.645mm) alumina
microstrip.
This antenna switch uses a series mounted diode and a shunt
mounted diode. The UM9601 was selected for shunt mounted
device (SPST performance at 1 GHz: 0.2dB insertion loss and
25dB isolation) and because it is the lowest cost diode in the
UM9601-UM9608 series. A UM9401 axial lead diode was
chosen for the series mounted device.
The performance of this switch is displayed in the graphs
and in the following table. It should be noted that the loss
values are actual measured numbers including losses due to the
capacitors, bias networks, connectors, as well as the board. In a
typical radio application where the antenna switch circuit board
is integrated in the same microstrip board that contains
transmitter and receiver elements the connector loss is
eliminated. This will result in lower overall insertion loss values
than indicated here.
For solder adhesion the microstrip may be heated to solder
melting temperature (up to 300 oC) with no damage to the
diode. Conductive epoxy may also be employed. The thermal
resistance of solder mounted UM9601-UM9604 in their test
boards was less than 20 oC/W; for the UM9605-UM9608
thermal resistance was less than 30 oC/W.
UM9601 – UM9608
FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
C
O S O S
AND MICROWAVE APPLICATIONS
where σ = maximum antenna SWR
The CW power handling capacity is determined by the
allowable power dissipation of the series mounted UM9401.
Using a gap in the line of 0.190” (4.82mm) and lead soldered
attached spacing of 0.250” (6.35mm) the power rating of the
UM9401 is 6 watts at a 25 oC ambient. This was determined by
performing a thermal resistance measurement on the circuit
mount UM9401. The relationship that derives the maximum
transmitter power, PT is:
P
 σ + 1
PT = DISS Zo

Rs
 2σ 
2
MAXIMUM TRANSMITTER POWER (W)
MAX. TRANSMITTER POWER vs FORWAD CURRENT FOR
UM9601/UM9401 900 MHz MICROSTRIP ANTENNA SWITCH
TYPICAL
103
Zo = 50 Ohms
SWR = INFINITE
102
200mA
100 mA
50 mA
101
20 mA
10 mA
100
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE
Copyright  2005
Rev. 0, 2006-01-17
Microsemi
Page 12
WWW . Microsemi .C OM
Using resistance values for UM9401 and UM9601 the
maximum transmitter power curve is given and shows that this
circuit is able to handle 100 watts of transmitter power at 100
mA forward bias and totally mismatched antenna at an ambient
temperature of 60 oC. For a perfectly match antenna the power
handling increases to 400 watts under the same bias and
ambient conditions.
Distortion is an important consideration in the selection of a
PIN diode antenna switch design. The UM9401 and UM9601
PIN diodes are designed for low distortion applications. The
level of distortion produced by this 900 MHz antenna switch
when operated in the transmit state (forward bias of 100 mA) is
expected to be at least 90 dB below the carrier for a 50 watt
transmitter level. In the receiver
state (zero bias) the intermodulation distortion
caused by two in-band signals at 0 dBm are estimated to be at
least 100 dB below this level
UM9601 – UM9608
FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
C
O S O S
AND MICROWAVE APPLICATIONS
WWW . Microsemi .C OM
Antenna Switch Performance
Frequency Range
800-900 MHz
1. Transmit State
(I = 100 mA, TA = 60 oC)
A. Maximum Transmitter Power 100 watts
(antenna SWR = ∞)
B. Maximum Transmitter Power 40 watts
(antenna SWR = 1)
C. Transmitter Insertion Loss 0.4 dB
D. Receiver Isolation 31 dB
E. Harmonic Distortion -90 dB
(PT = 100 watts)
Copyright  2005
Rev. 0, 2006-01-17
II. Receive State
(zero Bias)
A. Receiver Isolation Loss 0.6-0.7 dB
B. Intermodulation Distortion -100 dB
PIN = 0 dBm
Microsemi
Page 13
UM9601 – UM9608
FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
C
O S O S
AND MICROWAVE APPLICATIONS
WWW . Microsemi .C OM
ANTENNA SWITCH INSERTION LOSS
TYPICAL
1.0
INSERTION LOSS (dB)
RECEIVER INSERTION
0.8
LOSS (If=0)
0.6
If=20 mA
If=50 mA
0.4
TRANSMITTER
INSERTION LOSS
(If=100 mA)
0.2
0.0
700
750
800
850
900
950
1000
FREQUENCY (MHz)
RECEIVER ISOLATION vs FREQUENCY AND DIODE CURRENT
TYPICAL
35
100 mA
50 mA
20 mA
ISOLATION (dB)
30
10 mA
25
20
15
10
700
750
800
850
900
950
1000
FREQUENCY (MHz)
Copyright  2005
Rev. 0, 2006-01-17
Microsemi
Page 14
UM9601 – UM9608
FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
C
O S O S
AND MICROWAVE APPLICATIONS
WWW . Microsemi .C OM
Figure: Substrate Drawing
Figure: Assembly Drawing
Parts list
F1
C1-C4
D1
D2
J1-J3
Copyright  2005
Rev. 0, 2006-01-17
5000 pF Feed Through Filter
30 pF Chip Capacitor
PIN Diode
PIN Diode
SMA Connector
Substrate
Erie 1270-016
Vitramon VJ0805A300KF
Microsemi UM9401
Microsemi UM9601
Cableware 971-028
Vectronics Microwave 79-9081-0401
Microsemi
Page 15
UM9601 – UM9608
FOR MICROSTRIP 900 MHz ANTENNNA SWITCHES
C
O S O S
AND MICROWAVE APPLICATIONS
Copyright  2005
Rev. 0, 2006-01-17
Microsemi
WWW . Microsemi .C OM
NOTES:
Page 16