GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -7.0 to 0 dBm LNA • O perating voltage range: 2.7 to 4 V • Total current consum ption: 22 m A LO • Adjustable Mixer G ain and IP3 ESD: Electrostatic discharge sensitive device O bserve handling Precautions! Type Marking Ordering code (tape and reel) Package CMH192 H192 Q62705-K608 VQFN-20 Maximum Ratings Supply Voltage DC-Voltage at RF Ports DC-Voltage at GND Ports DC-Voltage at CNTL Ports Power into LO Input Symbol VDD VRF VGND VCNTL Power into RF-IF Ports Pin,LO Pin, RF Operating Temperature Ta Channel Temperature TCh Storage Temperature Tstg Thermal Resistance Channel to Soldering Point (GND) CMH192 – Datasheet (October 1st, 2002) RthChS Value Unit min max 0 6 V - 0.3 0.3 V - 0.3 0.3 V 0 0.3 + VDD V 10 dBm 10 dBm 85 °C 150 °C 150 °C -40 -55 102 °C /W pg. 1/11 Electrical Characteristics Parameter GaAs MMIC CMH192 min typ max Unit 1930 - 1990 MHz 1780 - 1940 MHz 1840 - 1870 MHz 1590 - 1820 MHz 50 - 250 MHz LO Power Input -7.0 - 0.0 dBm Supply Voltage (Vdd) 2.7 - 4.0 V High Logic Level (H) VDD – 0.2 - VDD V 0.0 - 0.2 V RF – Frequency / US LO – Frequency / US (1) RF – Frequency / Korean LO – Frequency / Korean (1) IF Frequency range Low Logic Level (L) 1) High-side LO is also supported LNA – Performance of LNA Test conditions: Ta = 25°C, VDD= 2.7 V, PRF= -22 dBm, fRF = 1960 MHz, LOW=GND, HIGH=Vdd Mode – High Gain, High Linearity min Operating Current typ max Unit 7 mA Noise Figure 1.1 dB Gain 12.5 dB Input / Output return loss 10 dB 3rd Order Input Intercept Point 8.5 dBm Mode – High Gain, Reduced Current min Operating Current Typ max Unit 5 mA Noise Figure 1.2 dB Gain 12.3 dB Input / Output return loss 10 dB 3rd Order Input Intercept Point 7.5 dBm Mode – Low Gain, By-Pass Mode Operating Current min Typ max Unit 0 mA 4.5 dB Gain 5 dB Input / Output return loss 10 dB 3rd Order Input Intercept Point 25 dBm Noise Figure CMH192 – Datasheet (October 1st, 2002) pg. 2/11 GaAs MMIC CMH192 MIXER - Electrical Characteristics of Mixer section Test conditions: Ta = 25°C; VDD= 2.7V, PLO = -7 dBm,PRF=-22 dBm, fRF = 1960 MHz, fLO = fRF - f IF, fIF = 210MHz, LOW=GND, HIGH=Vdd Mode – High Linearity min typ max Unit Operating Current 15 mA Conversion Gain 15.0 dB Noise Figure 3.5 dB 3rd Order Input Intercept Point 5.5 dBm RF Input return loss 10 dB 10 dB 350 - j*515 Ω LO Input return loss IF Output Impedance (1) Mode – Reduced Current min typ max Unit Operating Current 12 mA Conversion Gain 14.5 dB Noise Figure 3.8 dB 3rd Order Input Intercept Point 4 dBm RF Input return loss 10 dB 10 dB 350 - j*515 Ω LO Input return loss IF Output Impedance (1) 1) IF Output externally tuned to desired impedance FULL CHAIN – LNA/Downconverter Characteristics Test conditions: Ta = 25°C; VDD= 2.7V, PLO = -7 dBm, PRF=-22 dBm, fRF = 1960 MHz, fLO = fRF - f IF, fIF = 210MHz, LOW=GND, HIGH=Vdd Mode – High Gain, High Linearity Total operating Current min typ max Unit 22.0 mA 24.5 dB Noise Figure 1.7 dB Input IP3 -4.5 dBm Conversion Gain (1) LNA Input IP3 10.0 dBm 1) Assumes 3 dB loss for image filter, value is calculated based on gain measurement of LNA and downconverter CMH192 – Datasheet (October 1st, 2002) pg. 3/11 GaAs MMIC CMH192 FULL CHAIN – LNA/Downconverter Characteristics (continued) Test conditions: Ta = 25°C; VDD= 2.7V, PLO = -7 dBm, PRF=-22 dBm, fRF = 1960 MHz, fLO = fRF - f IF, fIF = 210MHz, LOS=GND, HIGH=Vdd min typ max Mode – High Gain, Reduced Current Unit Total operating Current 17 mA 23.5 dB Noise Figure 1.8 dB Input IP3 -5.5 dBm LNA Input IP3 7.5 dBm Conversion Gain (1) Mode – Low Gain (LNA bypass) min Typ Total operating Current Conversion Gain (1) Noise Figure max Unit 12 mA 7.2 dB 11.5 dB Input IP3 11.5 1) Assumes 3.0 dB loss for image filter, value is calculated based on gain measurement of LNA and downconverter dBm Truth Table Control Voltage Operating Mode Gain Ctl Rcv Only High Gain & Linearity H H High Gain, Low Current H L Low Gain L L CMH192 – Datasheet (October 1st, 2002) pg. 4/11 GaAs MMIC CMH192 PIN Assignments & Functional Block Diagram MIXE IF LN RF LO Pin Assignments: PIN Symbol 1 LO in 2 GND 3 LOA Vdd 4 Mix Out Truth5Table: IF Mtch 6 IF In 7 GND 8 IFA src 9 IFA out 10 GND 11 RFA Vdd 12 RFA in 13 Rcv 14 Vdd 15 LNA out 16 LNA Vdd 17 GND 18 LNA in 19 GND 20 Gctl Description LO Input Ground Supply voltage for LO Buffer Amp Mixer IF Output IF input match connection IF amplifier input Ground IF Amplifier FET source ground IF Amplifier output Ground Supply voltage for RFA Mixer input from image filter Current mode control Supply voltage RF output of LNA Supply voltage for LNA Ground RF Input to LNA Ground Gain mode control for LNA CMH192 – Datasheet (October 1st, 2002) pg. 5/11 GaAs MMIC CMH192 Applications Circuit: Component C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 Description CAP, 1 pF CAP, 22 pF CAP, 10K pF CAP, 100 pF CAP, 22 pF CAP, 1000 pF CAP, 10K pF CAP, 3.3 pF CAP, 100 pF CAP, 2 pF CAP, 4 pF Package Type 0402 0402 0402 0402 0402 0402 0402 0402 0402 0402 0402 CMH192 – Datasheet (October 1st, 2002) Component C12 L1 L2 L3 L4 L5 L6 L7 L8 R1 R2 Description CAP, 100 pF IND, 5.6 nH IND, 120 nH IND, 100 nH IND, 82 nH IND, 2.7 nH IND, 5.6 nH IND, 5.6 nH IND, 12 nH RES, 100 KOHM RES,100 KOHM Package Type 0402 0402 0603 0603 0603 0402 0402 0402 0402 0402 0402 pg. 6/11 GaAs MMIC CMH192 Package Outline – VQFN 20 Recommended PCB Layout: 100pF 0402 SMT capacitor, 3 places (Murata GRP1555C7H100JZ01 or equivalent ) CMH192 – Datasheet (October 1st, 2002) pg. 7/11 GaAs MMIC CMH192 Evaluation Board: CMH192 – Datasheet (October 1st, 2002) pg. 8/11 GaAs MMIC CMH192 CMH192 – Application Information DC Biasing: Supply Voltage One regulated voltage source is needed for CMH192. On the evaluation board it is labeled VDD. Minimum LO Power for Proper Biasing For proper biasing of the CMH192, a minimum LO input power is required. If the part is turned ON without any LO drive applied all currents will be extremely high. The minimum LO required is approximately –9 dBm. Operation with LO input powers below the minimum value causes the current to increase in all amplifier stages. For higher LO input power levels the current stays relatively constant over a wide range of LO powers. Proper matching of the LO amplifier is also important to achieve the lowest current consumption and to minimize the required LO input power. Adjustable Current Level The CMH192 can operate in two different current/linearity modes: High Linearity (with higher current) and Reduced Current (lower linearity). To operate with reduced current the voltage on pin 13 (RCV) should be set LOW. Some additional current reduction can be achieved by reducing the voltage at pin 14 by placing a resistor between VDD and pin 14. The current pulled by pin 14 is approximately 1 mA. Higher currents can be realized by using a higher VDD voltage. Tuning LO and IF Amplifiers: The CMH192 can be tuned to utilize either high or low side LO frequencies and allows a wide range of IF frequencies. Depending on the chosen frequency plan the off chip components for the LO and IF amplifiers will need to be optimized. An application circuit with all component values is provided for low side LO injection with IF frequency of 210 MHz (RF freq 1930 – 1960 MHz) Two external components (L6 and L7) are required for tuning the LO. L6 is critical for setting the minimum current and to achieve the constant DC current over the operating band. L7 sets the LO input match. Components L4, C9 and C11 form the input match for the IF amplifiers and will vary depending on the chosen IF frequency. The inductor on pin 8 allows adjustment to the gain of the IF amplifier. Output matching components shown in the application circuit provide a transformation for a 50 Ohm load impedance. The output impedance for the IFA (looking into pin 9) at 210 MHz is approximately (350 - j*515) Ohms. CMH192 – Datasheet (October 1st, 2002) pg. 9/11 GaAs MMIC CMH192 Downconverter Gain Adjustment: The Downconverter gain can be adjusted by changing the source feedback inductor L3 for the IFA. Higher inductance will give lower downconverter gain and typically improve the IIP3. Gain/Current Control Pins: LOW = 0 to 0.2 V HIGH = Vdd to (Vdd – 0.2) V VGAIN – select between high and low gain states in the LNA. VGAIN = HIGH: LNA ON (~12 dB Gain, ~ 6.5 mA current) VGAIN = LOW: LNA bypassed (~ 4 dB Loss, no current) VRCV - selects Current/Linearity mode (changes current in LNA/RFA/IFA) VRCV = LOW selects Reduced Current Mode VRCV = HIGH selects High Linearity Mode. Other Notes: Inductor L1 is critical for setting the Noise Figure of the LNA. A high Q wire wound inductor (e.g. Coilcraft) is recommended to achieve minimum NF. Inductor L5 and Capacitor C10 form a “tank circuit” to terminate the RF in the mixer. These components should be placed in parallel close to pin 4. These elements may require tuning depending on component vendor and board parasitics to achieve flat conversion gain vs. frequency. Inductor L8 is necessary for proper operation of the circuit for ESD protection. Lower RF frequencies (i.e. Korean PCS or GPS) may be accommodated by adding inductance between the LNA and RFA VDD pins and their bypass capacitors. LNA current can be determined by subtracting the current in Low Gain mode from the current in High Gain mode (keeping VRCV and VMODE constant). Control lines (G_CNTL, VRCV and VMODE) have an input impedance of greater than 1 MΩ when Vdd is ON. When VDD is off, they have approximately 20 KΩ input impedance. CMH192 – Datasheet (October 1st, 2002) pg. 10/11 GaAs MMIC CMH192 Published by TriQuint Semiconductor GmbH, Marketing, Konrad-Zuse-Platz 1, D-81829 Munich. Copyright TriQuint Semiconductor GmbH 2002. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery, and prices please contact the Offices of TriQuint Semiconductor in Germany or the TriQuint Semiconductor Companies and Representatives worldwide. Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest TriQuint Semiconductors Office. pg. 11/11