CMT9926G N-CHANNEL ENHANCEMENT MODE POWER MOSFET GENERAL DESCRIPTION FEATURES 20V N-Channel Enhancement-Mode MOSFET Advanced trench process technology Vds=20V High Density Cell Design For Ultra Low On-Resistance RDS(ON)=30 mΩ (TYP.) , VGS @2.5V, [email protected] High Power and Current handing capacity RDS(ON)=22 mΩ (TYP.), VGS @4.5V, Ids@6A Fully Characterized Avalanche Voltage and Current Ideal for Li ion battery pack applications APPLICATIONS Power Management in Notebook Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter PIN CONFIGURATION SYMBOL 8-PIN SOP (S08) Top View N-Channel MOSFET ORDERING INFORMATION Part Number CMT9926G Package SOP-8 *Note: G : Suffix for Pb Free Product 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 1 CMT9926G N-CHANNEL ENHANCEMENT MODE POWER MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25℃ unless otherwise notes) Rating Symbol Value Unit Drain- to- Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±12 V Continuous Drain Current (TJ=150℃) (TA=25℃) ID 6 A Pulsed Drain Current IDM 20 A TA=25℃ PD 2.0 W TA=75℃ PD 1.3 W TJ -55 to150 ℃ TSTG -55 to 150 ℃ Rthj-a 62.5 ℃/W Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Thermal Resistance Junction-ambient (PCB mount) Note : 1. Repetitive Rating : Pulse width limited by the Maximum junction temperation 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design ; not subject to production testing 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 2 CMT9926G N-CHANNEL ENHANCEMENT MODE POWER MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise notes) Symbol Parameter Test Conditions Min. Typ. Max. Units 20 - - V VGS=4.5V, ID=6A - 22 28 mΩ VGS=2.5V, ID=5.2A - 30 40 mΩ 0.6 - - V BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistancem VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA gfs Forward Transconductance VDS=10V, ID=6A 7 13 - S IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA IGSS Gate-Source Forward Leakage VGS=12V - - 100 nA Gate-Source Reverse Leakage VGS=-12V - - -100 nA Qg Total Gate Charge - 4.86 - nC Qgs Gate-Source Charge - 0.92 - nC Qgd Gate-Drain ("Miller") Charge ID=6A VDS=10V VGS=4.5V - 1.4 - nC td(on) Turn-on Delay Time - 8.1 - ns tr Rise Time - 9.95 - ns td(off) Turn-off Delay Time - 21.85 - ns tf Fall Time VDD=10V ID=1A RG=6Ω VGEN=4.5V - 5.35 - ns Ciss Input Capacitance - 562 - pF Coss Output Capacitance - 106 - pF Crss Reverse Transfer Capacitance VGS=0V VDS=8V f=1.0MHz - 75 - pF Min. Typ. Max. Units - - 1.2 V - - 1.7 A VGS=0V, ID=-250uA Source-Drain Diode Symbol Parameter VSD Diode Forward Voltage Is Max. Diode Forward Current Test Conditions Tj=25℃ , IS=1.7A, VGS=0V Notes: Pulse test : Pulse width <300us , duty cycle <2%. 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 3 CMT9926G N-CHANNEL ENHANCEMENT MODE POWER MOSFET TYPICAL CHARACTERISTICS 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 4 CMT9926G N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 5 CMT9926G N-CHANNEL ENHANCEMENT MODE POWER MOSFET PACKAGE DIMENSION 8-PIN SOP (S08) 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 6 CMT9926G N-CHANNEL ENHANCEMENT MODE POWER MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 T E L : +886-2-2788 0558 F A X : +886-2-2788 2985 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 7