CMT55N03G
25V N-CHANNEL ENHANCEMENT-MODE MOSFET
APPLICATION
FEATURES
Vds=25V
Advanced trench process technology
RDS(ON)=6 mΩ (Max.) , VGS @10V, Ids@30A
High Density Cell Design For Ultra Low On-Resistance
RDS(ON)=9 mΩ (Max.), VGS @4.5V, Ids@30A
Specially Designed for DC/DC Converters and Motor
Drivers
PIN CONFIGURATION
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
SYMBOL
TO-252
D
GATE
DRAIN
SOURCE
Front View
1
2
3
G
S
N-Channel MOSFET
Maximum Ratings and Thermal Characteristics
(TA=25℃ unless otherwise notes)
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDS
25
V
Gate -Source Voltage
VGS
±20
V
ID
55
A
IDM
100
A
TA=25℃
PD
70
W
TA=75℃
PD
42
W
TJ / TSTG
-55 to150
℃
RθJC
1.8
℃/W
RθJA
50
℃/W
Continuous Drain Current
Pulsed Drain Current
1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Junction – to –Case Thermal Resistance
2)
Junction – to Ambient Thermal Resistance (PCB mount)
Note : 1. Repetitive Rating : Pulse width limited by the Maximum junction temperation
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design ; not subject to production testing
2007/03/15 Rev1.0
Champion Microelectronic Corporation
Page 1
CMT55N03G
25V N-CHANNEL ENHANCEMENT-MODE MOSFET
ORDERING INFORMATION
Part Number
Package
CMT55N03GN252
TO-252
ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise notes)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VGS=0V, ID=-250uA
25
-
-
V
VGS=4.5V, ID=30A
-
7.5
9.0
mΩ
VGS=10V, ID=30A
-
4.5
6.0
mΩ
1.3
1.9
3
V
Static
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Drain-Source On-State Resistancem
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=15V, ID=15A
-
-
-
S
IDSS
Zero Gate Voltage Drain Current
VDS=25V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Forward Leakage
VGS=±20V , VDS=0V
-
-
±100
nA
Gate Resistance
VDS=0V , VGS=1V at 1MHz
Qg
Total Gate Charge
-
16.8
-
nC
Qgs
Gate-Source Charge
-
6.08
-
nC
Qgd
Gate-Drain ("Miller") Charge
ID=20A
VDS=15V
VGS=5V
-
4.93
-
nC
td(on)
Turn-on Delay Time
-
15.13
-
ns
tr
Rise Time
-
4
-
ns
td(off)
Turn-off Delay Time
-
45.27
-
ns
tf
Fall Time
-
7.6
-
ns
Ciss
Input Capacitance
-
2325.9
-
pF
Coss
Output Capacitance
-
330.55
-
pF
Crss
Reverse Transfer Capacitance
VDD=15V
ID=1A
RG=6Ω
RL=15Ω
VGEN=10V
VGS=0V
VDS=15V
f=1.0MHz
-
173.91
-
pF
Min.
Typ.
Max.
Units
-
0.85
1.3
V
-
-
20
A
Rg
3
Ω
3)
Dynamic
Source-Drain Diode
Symbol
Parameter
VSD
Diode Forward Voltage
Is
Max. Diode Forward Current
Test Conditions
IS=20A, VGS=0V
Notes:
Pulse test : Pulse width <300us , duty cycle <2%.
2007/03/15 Rev1.0
Champion Microelectronic Corporation
Page 2
CMT55N03G
25V N-CHANNEL ENHANCEMENT-MODE MOSFET
TYPICAL
CHARACTERISTICS
2007/03/15 Rev1.0
Champion Microelectronic Corporation
Page 3
CMT55N03G
25V N-CHANNEL ENHANCEMENT-MODE MOSFET
2007/03/15 Rev1.0
Champion Microelectronic Corporation
Page 4
CMT55N03G
25V N-CHANNEL ENHANCEMENT-MODE MOSFET
PACKAGE DIMENSION
TO-252
C
B
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
E
V
R
S
A
4
2
3
U
K
1
L
D
G
2007/03/15 Rev1.0
J
H
Champion Microelectronic Corporation
Page 5
CMT55N03G
25V N-CHANNEL ENHANCEMENT-MODE MOSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F-1, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
7F-6, No.32, Sec. 1, Chenggong Rd., Nangang
District, Taipei City 115, Taiwan
2007/03/15 Rev1.0
T E L : +886-2-2788 0558
F A X : +886-2-2788 2985
Champion Microelectronic Corporation
Page 6