CMT60N06G N-CHANNEL Logic Level Power MOSFET APPLICATION FEATURES DC motor control Low ON Resistance UPS Low Gate Charge Class D Amplifier Peak Current vs Pulse Width Curve Inductive Switching Curves VDSS RDS(ON) Typ. ID 60V 15.8mΩ 60A PIN CONFIGURATION SYMBOL TO-220 D SOURCE DRAIN GATE Front View G S 1 2 N-Channel MOSFET 3 ABSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage (Note 1) Drain to Current － Continuous Tc = 25℃, VGS@10V － Continuous Tc = 100℃, VGS@10V Symbol Value Unit VDSS 60 V ID 60 A ID 43 IDM 241 Gate-to-Source Voltage － Continue VGS ±20 Total Power Dissipation PD 150 W 1.0 W/℃ dv/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, TSTG -55 to 175 ℃ Single Pulse Avalanche Energy L=144μH,ID=40 Amps EAS 500 mJ Maximum Lead Temperature for Soldering Purposes TL 300 ℃ TPKG 260 ℃ IAS 60 A － Pulsed Tc = 25℃, VGS@10V (Note 2) Derating Factor above 25℃ Peak Diode Recovery dv/dt (Note 3) Maximum Package Body for 10 seconds Pulsed Avalanche Rating V THERMAL RESISTANCE Symbol RθJC Parameter Junction-to-case RθJA Junction-to-ambient 2006/03/07 Rev 1.1 Min Typ Max 1.0 Units ℃/W 62 ℃/W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +175℃ 1 cubic foot chamber, free air Champion Microelectronic Corporation Page 1 CMT60N06G N-CHANNEL Logic Level Power MOSFET ORDERING INFORMATION Part Number Package CMT60N06G TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT60N06G Characteristic Symbol Min VDSS 60 Typ Max Units OFF Characteristics Drain-to-Source Breakdown Voltage V (VGS = 0 V, ID = 250 μA) Breakdown Voltage Temperature Coefficient ΔVDSS/ΔTJ 0.069 mV/℃ (Reference to 25℃, ID = 250 μA) Drain-to-Source Leakage Current IDSS μA (VDS = 60 V, VGS = 0 V, TJ = 25℃) 25 (VDS = 48 V, VGS = 0 V, TJ = 150℃) 250 Gate-to-Source Forward Leakage IGSS 100 nA IGSS -100 nA 2.0 3.0 V 15.8 18 (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) ON Characteristics VGS(th) Gate Threshold Voltage 1.0 (VDS = VGS, ID = 250 μA) Static Drain-to-Source On-Resistance RDS(on) (Note 4) (VGS = 10 V, ID = 60A) Forward Transconductance (VDS = 15 V, ID = 60A) (Note 4) mΩ gFS 36 S Ciss 1430 Coss 420 pF pF Crss 88 pF (VDS = 30 V, ID = 60 A, Qg 37.7 VGS = 10 V) (Note 5) Qgs 8.4 nC nC Qgd 9.8 nC td(on) 12.1 trise 64 ns ns td(off) 69 ns tfall 39 ns Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (VGS = 10 V) Gate-to-Source Charge (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Gate-to-Drain (“Miller”) Charge Resistive Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VDD = 30 V, ID = 60 A, VGS = 10 V, RG = 9.1Ω) (Note 5) Source-Drain Diode Characteristics Continuous Source Current IS 60 A A Integral pn-diode in MOSFET (Body Diode) Pulse Source Current (Body Diode) ISM 241 Diode Forward On-Voltage (IS = 60 A, VGS = 0 V) VSD 1.5 Reverse Recovery Time (IF = 60A, VGS = 0 V, trr 55 ns di/dt = 100A/μs) Qrr 110 nC Reverse Recovery Charge V Note 1: TJ = +25℃ to +175℃ Note 2: Repetitive rating; pulse width limited by maximum junction temperature. Note 3: ISD = 60A, di/dt <100A/μs, VDD < BVDSS, TJ = +175℃ Note 4: Pulse width < 250μs; duty cycle<2% Note 5: Essentially independent of operating temerpature. 2006/03/07 Rev 1.1 Champion Microelectronic Corporation Page 2 CMT60N06G N-CHANNEL Logic Level Power MOSFET 2006/03/07 Rev 1.1 Champion Microelectronic Corporation Page 3 CMT60N06G N-CHANNEL Logic Level Power MOSFET 2006/03/07 Rev 1.1 Champion Microelectronic Corporation Page 4 CMT60N06G N-CHANNEL Logic Level Power MOSFET 2006/03/07 Rev 1.1 Champion Microelectronic Corporation Page 5 CMT60N06G N-CHANNEL Logic Level Power MOSFET PACKAGE DIMENSION TO-220 A D c1 PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 E F φ A A1 L1 b b1 c c1 D L E E1 e e1 F L b1 e e1 b A1 c L1 φ Side View Front View 2006/03/07 Rev 1.1 Champion Microelectronic Corporation Page 6 CMT60N06G N-CHANNEL Logic Level Power MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan 2006/03/07 Rev 1.1 T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 Champion Microelectronic Corporation Page 7