TPCP8601 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) TPCP8601 High-Speed Switching Applications DC-DC Converter Applications Strobo Flash Applications 0.05 M A 5 8 High DC current gain: hFE = 200 to 500 (IC = −0.6 A) • Low collector-emitter saturation: VCE (sat) = −0.19 V (max) • High-speed switching: tf = 35 ns (typ.) 0.475 1 4 B 0.65 0.05 M B 2.9±0.1 A Maximum Ratings (Ta = 25°C) Characteristic 0.8±0.05 Symbol Rating Unit Collector-base voltage VCBO −20 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −7 V IC −4.0 ICP −7.0 IB −0.5 Collector current DC (Note 1) Pulse (Note 1 ) Base current Collector power dissipation (t = 10s) t = 10s DC Junction temperature Storage temperature range 2.8±0.1 2.4±0.1 • Unit: mm 0.33±0.05 Pc (Note 2) 3.3 1.3 S 0.025 S 0.28 +0.1 -0.11 0.17±0.02 +0.13 1.12 -0.12 1.12 +0.13 -0.12 1.Collector 2.Collector 3.Collector 4.Base A 0.28 +0.1 -0.11 5.Emitter 6.Collector 7.Collector 8.Collector A JEDEC ― W JEITA ― TOSHIBA Tj 150 °C Tstg −55 to 150 °C 2-3V1A Weight: 0.017 g (typ.) Note 1: Ensure that the junction temperature does not exceed 150°C during use of this device. Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 3: ● on the lower left of the marking indicates Pin 1. Figure 1. Circuit Configuration (Top View) 8 7 6 5 * Weekly code (three digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (lowest-order digit of the calendar year) 1 2 3 4 Figure 2. Marking (Note 3) 8 7 6 5 8601 Type * 1 2 3 4 Lot No. (weekly code) 1 2004-12-10 TPCP8601 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −20 V, IE = 0 ⎯ ⎯ −100 nA Emitter cut-off current IEBO VEB = −7 V, IC = 0 ⎯ ⎯ −100 nA Collector-base breakdown voltage V (BR) CBO IC = −1 mA, IB = 0 −20 ⎯ ⎯ V Collector-emitter breakdown voltage V (BR) CEO V IC = −10 mA, IB = 0 −20 ⎯ ⎯ hFE (1) VCE = −2 V, IC = −0.6 A 200 ⎯ 500 hFE (2) VCE = −2 V, IC = −2.0 A 100 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = −2 A, IB = −67 mA ⎯ ⎯ −0.19 V Base-emitter saturation voltage VBE (sat) IC = −2 A, IB = −67 mA ⎯ ⎯ −1.1 V ⎯ 72 ⎯ ⎯ 170 ⎯ ⎯ 35 ⎯ DC current gain Rise time Switching time tr Storage time tstg Fall time tf See Figure 3 circuit diagram VCC ∼ − 12 V, RL = 6 Ω IB1 = −IB2 = −67 mA ns Figure 3. Switching Time Test Circuit & Timing Chart RL VCC IB2 I B1 IB1 Output Input 20μs Duty cycle ＜1% I B2 2 2004-12-10 TPCP8601 IC – VCE hFE – IC 1000 Common emitter Ta = 25°C Single nonrepetitive pulse 25 −30 −20 −15 −3 DC current gain Collector current hFE −4 Ta = 100°C IC (A) −5 −10 −2 −8 −6 −4 −1 −55 100 Common emitter VCE = −2 V Single nonrepetitive pulse IB = −2 mA 0 0 −0.4 −1.2 −0.8 −1.6 Collector−emitter voltage −2.0 VCE 10 0.001 −2.4 0.01 (V) Collector current VCE (sat) – IC Common emitter β = 30 Single nonrepetitive pulse 0.1 Ta = 100°C −55 25 0.01 0.001 0.001 0.01 0.1 −IC 10 (A) −IC (A) Common emitter β = 30 Single nonrepetitive pulse 1 Ta = −55°C 25 100 0.1 0.001 10 1 Collector current 1 VBE (sat) – IC 10 Base−emitter saturation voltage −VBE (sat) (V) Collector−emitter saturation voltage −VCE (sat) (V) 1 0.1 0.01 0.1 Collector current 1 −IC 10 (A) IC – VBE Common emitter VCE = −2 V Single nonrepetitive pulse −3 Collector current IC (A) −4 −2 −1 Ta = 100°C 0 0 −0.4 25 −55 −0.8 Base−emitter voltage −1.2 VBE −1.6 (V) 3 2004-12-10 TPCP8601 rth – tw Transient thermal impedance rth(j-a) (°C/W) 1000 100 10 Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25°C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 1 0.001 0.01 0.1 1 10 Pulse width tw 100 1000 (s) Safe operating area 10 Collector current −IC (A) 100 IC max (Pulse)* IC max (Continuous)* 10 ms* 1 ms* 100 μs* 10 s* 1 100 ms* *: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t 0.1 mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). These characteristic curves must be derated linearly with increase in temperature. 0.01 0.01 0.1 1 DC operation Ta = 25°C VCEO max Collector−emitter voltage 10 100 −VCE (V) 4 2004-12-10 TPCP8601 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2004-12-10