TPCP8901 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8901 Portable Equipment Applications Switching Applications Unit: mm 0.33±0.05 0.05 M A 5 8 Small footprint due to small and thin package • High DC current gain : PNP hFE = 200 to 500 (IC = −0.1 A) • Low collector-emitter saturation : PNP VCE (sat) = −0.20 V (max) :NPN hFE = 400 to 1000 (IC = 0.1 A) : NPN • 0.475 1 4 tf = 70 ns (typ.) : NPN tf = 85 ns (typ.) B 0.65 A 0.8±0.05 S 0.025 S 0.28 +0.1 -0.11 0.17±0.02 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol +0.13 1.12 -0.12 1.12 +0.13 -0.12 Rating PNP NPN Unit Collector-base voltage VCBO −50 100 V Collector-emitter voltage VCEO −50 50 V Emitter-base voltage VEBO −7 7 V (Note 1) IC −0.8 1.0 Pulse (Note 1 ) ICP −5.0 5.0 IB −100 100 Collector current DC Base current Collector power dissipation (t = 10s) Collector power dissipation (DC) Single-device operation Single-device value at dual operation Junction temperature Storage temperature range A mA 1.Emitter1 2.Base1 3.Emitter2 4.Base2 0.28 +0.1 -0.11 5.Collector2 6.Collector2 7.Collector1 8.Collector1 JEDEC ― JEITA ― TOSHIBA 2-3V1C Weight: 0.017 g (typ.) 1.48 PC (Note 2) W 0.80 Single-device operation Single-device value at dual operation 0.05 M B 2.9±0.1 VCE (sat) = 0.17 V (max) High-speed switching : PNP 2.8±0.1 2.4±0.1 • 0.83 PC (Note 2) W 0.48 Tj 150 °C Tstg −55 to 150 °C Note 1: Please use devices on condition that the junction temperature is below 150℃. Icp=±5A (@ t≦100μs) 2 Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm ) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-13 TPCP8901 Figure 1. Circuit configuration (top view) 8 7 6 Figure 2. Marking (Note 4) 8 7 5 6 5 8901 Q2 Q1 Type ※ 1 2 3 1 2 3 4 4 Note 4: ● on lower left on the marking indicates Pin 1. ※ Weekly code: (Three digits) Lot No. (Weekly code) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) Electrical Characteristics (Ta = 25°C) PNP Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −50 V, IE = 0 ⎯ ⎯ −100 nA Emitter cut-off current IEBO VEB = −7 V, IC = 0 ⎯ ⎯ −100 nA V (BR) CEO IC = −10 mA, IB = 0 −50 ⎯ ⎯ V hFE (1) VCE = −2 V, IC = −0.1 A 200 ⎯ 500 hFE (2) VCE = −2 V, IC = −0.3 A 125 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = −0.3 A, IB = −0.01 A ⎯ ⎯ −0.20 V Base-emitter saturation voltage VBE (sat) IC = −0.3 A, IB = −0.01 A ⎯ ⎯ −1.10 V VCB = −10 V, IE = 0, f = 1MHz ⎯ 8 ⎯ pF ⎯ 60 ⎯ ⎯ 280 ⎯ ⎯ 70 ⎯ Min Typ. Max Unit Collector-emitter breakdown voltage DC current gain Collector output capacitance Rise time Switching time Storage time Fall time Cob tr tstg tf See Figure 3 circuit diagram VCC ∼ − −30 V, RL = 100 Ω −IB1 = IB2 = −10 mA ns NPN Characteristics Symbol Test Condition Collector cut-off current ICBO VCB = 100 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 100 nA V (BR) CEO IC = 10 mA, IB = 0 50 ⎯ ⎯ V hFE (1) VCE = 2 V, IC = 0.1 A 400 ⎯ 1000 hFE (2) VCE = 2 V, IC = 0.3 A 200 ⎯ ⎯ Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage VCE (sat) IC = 300 mA, IB = 6 mA ⎯ ⎯ 0.17 V Base-emitter saturation voltage VBE (sat) IC = 300 mA, IB = 6 mA ⎯ ⎯ 1.10 V VCB = 10 V, IE = 0, f = 1MHz ⎯ 5 ⎯ pF ⎯ 35 ⎯ ⎯ 680 ⎯ ⎯ 85 ⎯ Collector output capacitance Rise time Switching time Storage time Fall time Cob tr tstg tf See Figure 4 circuit diagram VCC ∼ − 30 V, RL = 100 Ω IB1 = −IB2 = 10 mA 2 ns 2006-11-13 TPCP8901 Figure 3. Switching Time Test Circuit & Timing Chart 20μs Figure 4. Switching Time Test Circuit & Timing Chart 20μs Output IB1 Input IB2 IB1 I B2 RL IB1 RL I B2 VCC VCC Input IB1 Output Duty cycle ＜1% Duty cycle ＜1% IB2 3 2006-11-13 TPCP8901 NPN IC – VCE hFE – IC 1.0 20 10000 10 15 hFE 4 0.6 DC current gain Collector current Ta = 100°C 6 IC (A) 8 0.8 2 IB = 1 mA 0.4 0.2 0.2 0.4 0.6 0.8 Collector−emitter voltage 1.0 VCE 10 1 0.001 1.2 0.01 Base-emitter saturation voltage VBE (sat) (V) Collector−emitter saturation voltage VCE (sat) (V) Ta = 100°C −55°C 25°C 0.01 0.001 0.01 0.1 Collector current IC IC 1 (A) VBE (sat) – IC 10 Common emitter β = 50 Single nonrepetitive pulse 0.1 0.1 Collector current (V) VCE (sat) – IC 1 −55°C 25°C 100 Common emitter VCE = 2 V Single nonrepetitive pulse Common emitter Ta = 25°C Single nonrepetitive pulse 0 0 1000 Common emitter β = 50 Single nonrepetitive pulse Ta = −55°C 1 100°C 25°C 0.1 0.001 1 (A) 0.01 0.1 Collector current IC 1 (A) Safe Operation Area 10 IC max (Pulsed) ※ 100 μs※ IC – VBE (A) Collector current 0.6 Ta = 100°C −55°C 0.4 0.2 0 0 25°C 0.2 0.4 0.6 0.8 Base−emitter saturation voltage 1.0 VBE 1.2 (V) 1 IC max (Continuous)* 100 ms※* 10 s※* DC operation Ta = 25°C *: Single nonrepetitive pulse Ta = 25°C 0.1 Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). Single-device operation These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1 Collector-emitter voltage 4 10 μs※ 10 ms※ 1 ms※ VCEO max IC Collector current 0.8 Common emitter VCE = 2 V Single nonrepetitive pulse IC (A) 1.0 IC max (Pulsed) ※ 10 100 VCE (V) 2006-11-13 TPCP8901 PNP IC – VCE 1.0 −100 hFE – IC −50 10000 −40 DC current gain −10 0.6 Collector current hFE −20 −15 −IC (A) 0.8 −5 0.4 −2 IB = −1 mA 0.2 Common emitter VCE = −2 V Single nonrepetitive pulse −30 1000 Ta = 100°C 100 −55°C 25°C 10 Common emitter Ta = 25°C Single nonrepetitive pulse 0 0 0.2 0.6 0.4 0.8 1.0 −VCE Collector−emitter voltage 1 0.001 1.2 0.01 Collector current (V) VCE (sat) – IC Common emitter β = 30 Single nonrepetitive pulse 1 Ta = 100°C 0.1 −55°C 25°C 0.01 0.001 0.001 0.01 0.1 Collector current 1 −IC (A) VBE (sat) – IC 10 Base−emitter saturation voltage −VBE (sat) (V) Collector−emitter saturation voltage −VCE (sat) (V) 10 0.1 −IC Common emitter β = 30 Single nonrepetitive pulse Ta = −55°C 1 100°C 25°C 0.1 0.001 1 (A) 0.01 0.1 Collector current 1 −IC (A) Safe operation area 10 IC max (Pulse) ※ 100 μs※ IC – VBE 0.6 Ta = 100°C −55°C 0.4 0.2 25°C 0 0 0.2 0.4 10 μs※ 1 ms※ 0.6 0.8 Base−emitter saturation voltage 1.0 −VBE 1.2 (V) 1 IC max (Continuous)* 100 ms※* 10 s※* *: Single nonrepetitive pulse Ta = 25°C 0.1 Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). Single-device operation These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1 DC operation Ta = 25°C Collector−emitter voltage 5 VCEO max −IC VCE = −2 V Single nonrepetitive pulse 0.8 10 ms※ (A) Common emitter Collector current Collector current −IC (A) 1.0 IC max (Pulse) ※ 10 100 −VCE (V) 2006-11-13 TPCP8901 Common rth – tw 100 10 1 0.001 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Single-device operation 0.01 0.1 1 10 Pulse width tw 100 1000 (s) Permissible Power Dissipation for Simultaneous Operation Permissible power dissipation for Q2 PC (W) Transient thermal resistance rth(j-a) (°C/W) 1000 1.0 DC operation Ta = 25°C Mounted on an FR4 board glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 Permissible power dissipation for Q1 PC (W) Collector power dissipation at the single-device operation is 0.83W. Collector power dissipation at the single-device value at dual operation is 0.48W. Collector power dissipation at the dual operation is set to 0.96W. 6 2006-11-13 TPCP8901 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-13