SONY CXG1195XR

High Power SP5T Antenna Switch MMIC for GSM/UMTS Dual Mode
CXG1195XR
Description
The CXG1195XR is a SP5T antenna switch for GSM/UMTS applications. The low insertion loss on transmit
means increased talk time as the Tx power amplifier can be operated at a lower output level. On chip logic
reduces component count and simplifies PCB layout by allowing direct connection of the switch to digital base
band control lines with the CMOS logic levels. It requires 3 CMOS control lines. The Sony GaAs JPHEMT
MMIC process is used for low insertion loss.
(Applications: GSM/UMTS dual mode handsets)
Features
‹ Insertion loss (Tx) : 0.40dB (Typ.) at 34dBm (GSM900)
0.50dB (Typ.) at 32dBm (GSM1800)
0.50dB (Typ.) at 29dBm (UMTS2100)
Package
Small and low height package size: 20-pin XQFN (2.7mm × 2.7mm × 0.35mm (Typ.))
Structure
GaAs JPHEMT MMIC
This IC is ESD sensitive device. Special handling precautions are required.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license
by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating
the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E05X14A66
CXG1195XR
Absolute Maximum Ratings
(Ta = 25°C)
Š Bias voltage
VDD
7
V
Š Control voltage
Vctl
5
V
Š Input power max. [Tx1]
35
dBm
(Duty cycle = 12.5 to 50%)
Š Input power max. [Tx2]
33
dBm
(Duty cycle = 12.5 to 50%)
Š Input power max. [TRx]
32
dBm
Š Input power max. [all_Rx]
13
dBm
Š Operating temparature
Topr
–35 to +85
°C
Š Storage temperature
Tstg
–65 to +150
°C
Š Maximum power dissipation
PD
750
mW
・Copper-clad lamination of glass board (4 layers) : 30mm square, t = 0.8mm, FR-4.
Note) Use this product without exceeding the PD value specified in this specification.
If it is used with exceeding the PD value even for a moment, the heat generated by the operation may
cause the degradation or breakdown of the product.
Block Diagram
F1
ANT
Tx1 (GSM850/900)
F6
F2
Tx2 (GSM1800/1900)
F7
F3
Rx1
F8
F9
F4
Rx2
F5
TRx (UMTS)
F10
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CXG1195XR
GND
Tx1
GND
Tx2
GND
Pin Configuration
10
9
8
7
6
4 GND
GND 13
3 Rx2
GND 14
2 GND
ANT 15
1 GND
17
18
19
20
CTLC
GND
16
CTLB
TRx 12
CTLA
5 Rx1
VDD
GND 11
Truth Table
State
ON Path
CTLA CTLB CTLC
F1
F2
F3
1
ANT – Tx1
H
H
L
ON
2
ANT – Tx2
H
L
L
OFF
3
ANT – Rx1
L
L/H
L
OFF OFF
4
ANT – Rx2
L
L/H
H
OFF OFF OFF
5
ANT – TRx
H
L
H
F4
F5
F6
F7
F8
F9
F10
OFF OFF OFF OFF OFF
ON
ON
ON
ON
ON
OFF OFF OFF
ON
OFF
ON
ON
ON
ON
OFF OFF
ON
ON
OFF
ON
ON
ON
OFF
ON
ON
ON
OFF
ON
OFF OFF OFF OFF
ON
ON
ON
ON
ON
OFF
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CXG1195XR
Electrical Characteristics
(Ta = 25°C)
Item
Insertion loss
Symbol
IL
Port
Min.
Typ.
Max.
Unit
Tx1 – ANT
*1
Condition
—
0.35
0.50
dB
Tx2 – ANT
*2
—
0.45
0.60
dB
TRx (Tx) – ANT
*3
—
0.45
0.60
dB
ANT – Rx1
*4
—
0.5
0.65
dB
ANT – Rx2
*5
—
0.65
0.80
dB
ANT – TRx (Rx)
*6
—
0.5
0.65
dB
25
—
dB
25
—
dB
25
—
dB
1760 to 1830MHz
25
—
dB
*1
25
—
dB
25
—
dB
25
—
dB
25
—
dB
25
—
dB
25
—
dB
Active path: Tx1
ANT – Rx1
ANT – Rx2
ANT – Tx2
ANT – TRx
*1
Active path: Tx2
ANT – Rx1
ANT – Rx2
*2
ANT – TRx
Isolation
ISO.
Active path: TRx
ANT – Rx1
*3
ANT – Rx2
Tx1 – ANT
*1
25
—
dB
Tx2 – ANT
*2
25
—
dB
Tx1 – ANT
*1
20
—
dB
Tx2 – ANT
*2
20
—
dB
Tx1 – ANT
*1
20
—
dB
Tx2 – ANT
*2
20
—
dB
Active path: Rx1
Active path: Rx2
VSWR
VSWR
2fo
3fo
Harmonics
2fo
3fo
2fo
3fo
1.2
Tx1 – ANT
*1
Tx2 – ANT
*2
TRx – ANT
*3
—
—
–45
–35
dBm
—
–35
–30
dBm
—
–38
–33
dBm
—
–33
–30
dBm
—
–40
–35
dBm
—
–35
–30
dBm
Control current
Ictl
Vctl = 2.8V
—
20
50
μA
Supply current
IDD
VDD = 2.8V
—
0.2
0.5
mA
Switching speed
Swt
—
5
10
μs
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CXG1195XR
Note) Electrical Characteristics are measured with all RF ports terminated in 50Ω.
*1
*2
*3
*4
*5
*6
Power incident on Tx1, Pin = +34dBm (CW), 824 to 915MHz, VDD = 2.8V, Tx1 enabled
Power incident on Tx2, Pin = +32dBm (CW), 1710 to 1910MHz, VDD = 2.8V, Tx2 enabled
Power incident on TRx, Pin= +29dBm (CW), 1920 to 1980MHz, VDD = 2.8V, TRx enabled
Power incident on ANT, Pin = –5dBm, 869 to 894MHz, 925 to 960MHz, VDD = 2.8V, Rx1 enabled
Power incident on ANT, Pin = –5dBm, 1805 to 1880MHz, 1930 to 1990MHz, VDD = 2.8V, Rx2 enabled
Power incident on ANT, Pin = –5dBm, 2110 to 2170MHz, VDD = 2.8V, TRx enabled
DC Bias Condition
(Ta = 25°C)
Item
Min.
Typ.
Max.
Unit
Vctl (H)
2.0
2.8
3.6
V
Vctl (L)
0
—
0.4
V
2.6
2.8
3.6
V
VDD
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CXG1195XR
Recommended Circuit
Tx1
GND
10
GND
Tx2
GND
CRF
(100pF)
9
8
GND
CRF
(100pF)
7
6
11
5
Rx1
CRF
(100pF)
TRx
12
4
13
3
GND
CRF
(100pF)
GND
Rx2
CRF
(100pF)
GND
ANT
CRF
(100pF)
14
2
GND
15
1
GND
16
GND
17
18
19
20
Cbypass Cbypass Cbypass Cbypass
(100pF) (100pF) (100pF) (100pF)
VDD
CTLA
CTLB
CTLC
When using this IC, the following external components should be used:
CRF: This capacitor is used for RF decoupling and must be used for all applications.
100pF is recommended.
Cbypass: This capacitor is used for DC line filtering. 100pF is recommended.
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CXG1195XR
Package Outline
(Unit: mm)
LEAD PLATING SPECIFICATIONS
ITEM
LEAD MATERIAL
SPEC.
COPPER ALLOY
SOLDER COMPOSITION
Sn-Bi Bi:1-4wt%
PLATING THICKNESS
5-18µm
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Sony Corporation