High Power SP5T Antenna Switch MMIC for GSM/UMTS Dual Mode CXG1195XR Description The CXG1195XR is a SP5T antenna switch for GSM/UMTS applications. The low insertion loss on transmit means increased talk time as the Tx power amplifier can be operated at a lower output level. On chip logic reduces component count and simplifies PCB layout by allowing direct connection of the switch to digital base band control lines with the CMOS logic levels. It requires 3 CMOS control lines. The Sony GaAs JPHEMT MMIC process is used for low insertion loss. (Applications: GSM/UMTS dual mode handsets) Features Insertion loss (Tx) : 0.40dB (Typ.) at 34dBm (GSM900) 0.50dB (Typ.) at 32dBm (GSM1800) 0.50dB (Typ.) at 29dBm (UMTS2100) Package Small and low height package size: 20-pin XQFN (2.7mm × 2.7mm × 0.35mm (Typ.)) Structure GaAs JPHEMT MMIC This IC is ESD sensitive device. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E05X14A66 CXG1195XR Absolute Maximum Ratings (Ta = 25°C) Bias voltage VDD 7 V Control voltage Vctl 5 V Input power max. [Tx1] 35 dBm (Duty cycle = 12.5 to 50%) Input power max. [Tx2] 33 dBm (Duty cycle = 12.5 to 50%) Input power max. [TRx] 32 dBm Input power max. [all_Rx] 13 dBm Operating temparature Topr –35 to +85 °C Storage temperature Tstg –65 to +150 °C Maximum power dissipation PD 750 mW ・Copper-clad lamination of glass board (4 layers) : 30mm square, t = 0.8mm, FR-4. Note) Use this product without exceeding the PD value specified in this specification. If it is used with exceeding the PD value even for a moment, the heat generated by the operation may cause the degradation or breakdown of the product. Block Diagram F1 ANT Tx1 (GSM850/900) F6 F2 Tx2 (GSM1800/1900) F7 F3 Rx1 F8 F9 F4 Rx2 F5 TRx (UMTS) F10 -2- CXG1195XR GND Tx1 GND Tx2 GND Pin Configuration 10 9 8 7 6 4 GND GND 13 3 Rx2 GND 14 2 GND ANT 15 1 GND 17 18 19 20 CTLC GND 16 CTLB TRx 12 CTLA 5 Rx1 VDD GND 11 Truth Table State ON Path CTLA CTLB CTLC F1 F2 F3 1 ANT – Tx1 H H L ON 2 ANT – Tx2 H L L OFF 3 ANT – Rx1 L L/H L OFF OFF 4 ANT – Rx2 L L/H H OFF OFF OFF 5 ANT – TRx H L H F4 F5 F6 F7 F8 F9 F10 OFF OFF OFF OFF OFF ON ON ON ON ON OFF OFF OFF ON OFF ON ON ON ON OFF OFF ON ON OFF ON ON ON OFF ON ON ON OFF ON OFF OFF OFF OFF ON ON ON ON ON OFF -3- CXG1195XR Electrical Characteristics (Ta = 25°C) Item Insertion loss Symbol IL Port Min. Typ. Max. Unit Tx1 – ANT *1 Condition — 0.35 0.50 dB Tx2 – ANT *2 — 0.45 0.60 dB TRx (Tx) – ANT *3 — 0.45 0.60 dB ANT – Rx1 *4 — 0.5 0.65 dB ANT – Rx2 *5 — 0.65 0.80 dB ANT – TRx (Rx) *6 — 0.5 0.65 dB 25 — dB 25 — dB 25 — dB 1760 to 1830MHz 25 — dB *1 25 — dB 25 — dB 25 — dB 25 — dB 25 — dB 25 — dB Active path: Tx1 ANT – Rx1 ANT – Rx2 ANT – Tx2 ANT – TRx *1 Active path: Tx2 ANT – Rx1 ANT – Rx2 *2 ANT – TRx Isolation ISO. Active path: TRx ANT – Rx1 *3 ANT – Rx2 Tx1 – ANT *1 25 — dB Tx2 – ANT *2 25 — dB Tx1 – ANT *1 20 — dB Tx2 – ANT *2 20 — dB Tx1 – ANT *1 20 — dB Tx2 – ANT *2 20 — dB Active path: Rx1 Active path: Rx2 VSWR VSWR 2fo 3fo Harmonics 2fo 3fo 2fo 3fo 1.2 Tx1 – ANT *1 Tx2 – ANT *2 TRx – ANT *3 — — –45 –35 dBm — –35 –30 dBm — –38 –33 dBm — –33 –30 dBm — –40 –35 dBm — –35 –30 dBm Control current Ictl Vctl = 2.8V — 20 50 μA Supply current IDD VDD = 2.8V — 0.2 0.5 mA Switching speed Swt — 5 10 μs -4- CXG1195XR Note) Electrical Characteristics are measured with all RF ports terminated in 50Ω. *1 *2 *3 *4 *5 *6 Power incident on Tx1, Pin = +34dBm (CW), 824 to 915MHz, VDD = 2.8V, Tx1 enabled Power incident on Tx2, Pin = +32dBm (CW), 1710 to 1910MHz, VDD = 2.8V, Tx2 enabled Power incident on TRx, Pin= +29dBm (CW), 1920 to 1980MHz, VDD = 2.8V, TRx enabled Power incident on ANT, Pin = –5dBm, 869 to 894MHz, 925 to 960MHz, VDD = 2.8V, Rx1 enabled Power incident on ANT, Pin = –5dBm, 1805 to 1880MHz, 1930 to 1990MHz, VDD = 2.8V, Rx2 enabled Power incident on ANT, Pin = –5dBm, 2110 to 2170MHz, VDD = 2.8V, TRx enabled DC Bias Condition (Ta = 25°C) Item Min. Typ. Max. Unit Vctl (H) 2.0 2.8 3.6 V Vctl (L) 0 — 0.4 V 2.6 2.8 3.6 V VDD -5- CXG1195XR Recommended Circuit Tx1 GND 10 GND Tx2 GND CRF (100pF) 9 8 GND CRF (100pF) 7 6 11 5 Rx1 CRF (100pF) TRx 12 4 13 3 GND CRF (100pF) GND Rx2 CRF (100pF) GND ANT CRF (100pF) 14 2 GND 15 1 GND 16 GND 17 18 19 20 Cbypass Cbypass Cbypass Cbypass (100pF) (100pF) (100pF) (100pF) VDD CTLA CTLB CTLC When using this IC, the following external components should be used: CRF: This capacitor is used for RF decoupling and must be used for all applications. 100pF is recommended. Cbypass: This capacitor is used for DC line filtering. 100pF is recommended. -6- CXG1195XR Package Outline (Unit: mm) LEAD PLATING SPECIFICATIONS ITEM LEAD MATERIAL SPEC. COPPER ALLOY SOLDER COMPOSITION Sn-Bi Bi:1-4wt% PLATING THICKNESS 5-18µm -7- Sony Corporation