POWERINT DI-122

Design Idea DI-122
®
TinySwitch-III
13 W (17.2 W Peak) Non-Isolated Power Supply
for White Goods: <150 mW No-load Power Consumption
Application
Device
Power Output
White Goods TNY279P 13 W / 17.2 W Pk
Input Voltage
Output Voltage
Topology
85-265 VAC
-5 V, 2.0 A / -12 V, 0.25 A / 0.6 A Pk
Flyback
Design Highlights
Feedback is taken directly from the -5 V output. Once the
output exceeds the voltage defined by the VBE of Q1 and
rating of VR1, Q1 is biased on. This pulls current out of the
EN/UV pin of U1 and disables the next switching cycle. By
adjusting the number of enabled to disabled cycles, output
regulation is maintained.
• Low cost, low component count solution
• Impedance free path from Neutral to output RTN, ideal
for applications driving triacs
• <150 mW no-load consumption at 230 VAC input
• Both outputs exhibit good cross regulation
• Maximum ambient temperature of up to 70 °C
• Meets CISPR-22 Class B/EN55022 B EMI limits
without an input common mode choke
The value of R7 sets the bias current through VR1, operating
the Zener closer to its specified test current. Resistor R6 limits
the base current of Q1, R5 and C8 roll-off of high frequency
gain and R3 limits the current out of the EN/UV pin.
Operation
The non-isolated flyback converter shown in Figure 1 uses a
TNY279 to provide two output voltages: -5 V at 2 A and -12 V
at 250 mA continuous and 600 mA peak.
Diode D3 ensures the EN/UV pin is clamped to > -0.3 V with
respect to the SOURCE pin of U1.
Power Integrations E-Shield™ transformer construction
techniques, the RCD clamp, a simple π filter (C4, C5 and
L1), small X-type (C1) and Y-type (C2) capacitors and the
frequency jitter function of the TinySwitch-III family, provide
good EMI margin (see Figure 3). Using a one square inch
metal shield, located underneath U1 and T1 (connected
to the SOURCE pin of U1) can further reduce EMI noise
generation.
The MOSFET integrated within U1 switches the primary of
transformer T1. Each time it turns on, the primary current
ramps until it reaches an internal current limit and the MOSFET
is turned off. During the off time, the energy stored in T1
transfers to the secondary where it is rectified and filtered by
D4 and C11 and D5 and C9. The primary side RCD clamp
(D2, C6, R1 and R2) limits the peak DRAIN voltage spike
caused by transformer leakage inductance.
D1
1N4007
F1
3.15 A
Line
L1
1000 µH
1
T1
EF20
R1
200 kΩ
0.5 W
C6
1 nF
1 kV
8
C2
1 nF
250 VAC
R2
200 Ω
*
D2
1N4007GP
Safety Earth
Ground
C1
47 nF
275 VAC
**
C4
33 µF
400 V
**
C5
33 µF
400 V
D
7
D4
SB530
D5
SB3100
C11
2200 µF
10 V
C9
470 µF
25 V
C10
47 µF
25 V
-5 V, 2 A
-12 V, 250 mA
(600 mA pk)
R4
47 Ω
R3
4.7 kΩ
Q1
PN2222A
BP/M
R6
5.1 kΩ
S
C7
100 nF
50 V
C12
47 µF
16 V
L3
3.3 µH
3
TinySwitch-III
U1
TNY279P
EN/UV
RTN
10
D3
1N5817
R5
1 kΩ
C8
100 nF
50 V
VR1
BZX79-B4V7
4.7 V, 2%
R7
620 Ω
Neutral
*One square inch metal shield (connected to the S pin of U1) under U1 and T1 eliminates the need for C2.
**For high-line only operation (180 VAC input, minimum), 10 µF (400 V) capacitors can be used for C4 and C5.
PI-4498-112906
Figure 1. TinySwitch-III 13/17.2 W White Good Power Supply.
DI-122
January 2007
DI-89 DI-122
• The secondary side bias current, set by R7, should be kept
low to minimize light load and no-load power consumption.
• The output voltage that is reflected across the transformer
(VOR) should be kept low to minimize the losses in the
primary side RCD clamp.
• Optimize the turns ratio of the two outputs for voltage
centering.
• For good output cross regulation, design for continuous
conduction mode (minimize the value of KP in the PI Xls spreadsheet).
• Use a Schottky diode for D3 to limit EN/UV pin > -0.3 V.
• As the forward drop of D3 is a function of temperature, diode
type and current, use a schottky diode. Do not reduce the
value of R3, and verify EN/UV pin absolute maximum
ratings are observed at low temperatures (~ <-10 °C).
-12 V
-5.05 V
-11.49 V
100% on -5 V,
20% on -12 V
-5.03 V
-12.95 V
100% on -5 V,
5% on -12 V
-5.02 V
-13.90 V
EN55022B Limits
QP
60
AV
50
40
30
QP
20
AV
10
0
Table 1. Worst Case Cross Regulation at 85 VAC.
-10
PI-4499-090606
82
80
Efficiency (%)
70
dBµV
-5 V
20% on -5 V,
100% on -12 V
80
PI-4500-090706
• The value of R4 can be used to make small output
voltage adjustments.
• The regulation point is the sum of the voltage rating of
VR1, VBE(Q1) and the voltage across R4 ((VBE(Q1) /R7) × R4).
• Biasing the Zener below its test current lowers its
voltage drop, in this case to ~4.3 V.
• Select transformer wire gauge sizes so that each winding
layer occupies the entire bobbin width (lowers leakage
inductance and improves output cross regulation).
• Use option to add E-Shield windings in PI Transformer
Designer software to reduce conducted EMI noise
generation.
• No-load power consumption can be lowered by adding a
bias winding to feed the supply current of U1 into the BP pin.
Key Design Points
-20
0.15
1.0
10.0
70.0
MHz
Figure 3. Conducted EMI at 230 VAC, Full Load.
78
TRANSFORMER PARAMETERS
EF20 TDK PC40, or equivalent
Core Material
ALG of 142 nH/T2
76
74
Bobbin
Nominal Load
72
Winding Details
70
85
115
145
175
205
AC Input Voltage (V)
Figure 2. Full Load Efficiency vs. Input Voltage.
235
265
Primary
Inductance
EF20, 10 pin (5 + 5)
Shield: 23T, Primary: 95T
Shield: 9T (trifilar), –5 V: 5T,
–12 V: 7T
1.28 mH ±10%
Table 2. Transformer Construction Information.
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Rev. A 1/07