T2800D Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. http://onsemi.com Features • Blocking Voltage to 400 V • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability TRIACS 8 AMPERES RMS, 400 VOLTS • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Four Quadrant Gating • Pb−Free Package is Available* MT2 MT1 G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to +125°C, Gate Open) VDRM, VRRM 400 V On−State RMS Current (All Conduction Angles, TC = +80°C) IT(RMS) 8.0 A Peak Non−Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = +80°C) ITSM 100 A Circuit Fusing Consideration (t = 8.3 ms) I2t 40 A2s PGM 16 W PG(AV) 0.35 W IGM 4.0 A Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Peak Gate Power (Pulse Width = 10 ms, TC = +80°C) Average Gate Power (t = 8.3 ms, TC = +80°C) Peak Gate Current (Pulse Width = 10 ms, TC = +80°C) MARKING DIAGRAM 4 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. T2800DG AYWW TO−220AB CASE 221A STYLE 4 1 2 3 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION Device Package Shipping T2800D TO−220AB 500 Units/Box T2800DG TO−220AB (Pb−Free) 500 Units/Box *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev. 5 1 Publication Order Number: T2800/D T2800D THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RqJC 2.2 °C/W TL 260 °C Thermal Resistance, Junction−to−Case Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Sec ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit − − − − 10 2.0 mA mA − 1.7 2.0 V OFF CHARACTERISTICS IDRM, IRRM Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TC = 25°C TC = 100°C ON CHARACTERISTICS Peak On-State Voltage (Note 2) (IT = "30 A Peak) VTM Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 W) IGT mA MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) − − − − 10 20 15 30 25 60 25 60 Gate Trigger Voltage (Continuous dc) (All Quadrants) (VD = 12 Vdc, RL = 100 W) VGT − 1.25 2.5 V Gate Non−Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W, TC = 100°C) VGD 0.2 − − V Holding Current (VD = 12 Vdc, Initiating Current = "200 mA, Gate Open) IH − 15 30 mA Gate Controlled Turn-On Time (VD = Rated VDRM, IT = 10 A, IGT = 80 mA, Rise Time = 0.1 ms) tgt − 1.6 − ms dv/dt(c) − 10 − V/ms dv/dt 60 − − V/ms DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Commutation Voltage (VD = Rated VDRM, IT(RMS) = 8 A, Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C) Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = 100°C) 2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH VTM Quadrant 1 MainTerminal 2 + on state IH IRRM at VRRM off state IH Holding Current Quadrant 3 MainTerminal 2 − http://onsemi.com 2 VTM + Voltage IDRM at VDRM T2800D Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 Quadrant I (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 Quadrant III (−) MT2 Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. 12 P(AV) , AVERAGE POWER DISSIPATION (WATTS) 100 10 95 FULL CYCLE SINUSOIDAL WAVEFORM 90 85 80 0 2 4 6 8 FULL CYCLE SINUSOIDAL WAVEFORM 8 MAXIMUM TYPICAL 6 4 2 0 0 2 4 6 8 IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 1. Current Derating Figure 2. Power Dissipation http://onsemi.com 3 10 12 T2800D PACKAGE DIMENSIONS TO−220 CASE 221A−07 ISSUE AA −T− B F SEATING PLANE C T S 4 Q A 1 2 3 U H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 4: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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