MAC12SM, MAC12SN Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. • Sensitive Gate Allows Triggering by Microcontrollers and other Logic Circuits • Blocking Voltage to 800 Volts • On-State Current Rating of 12 Amperes RMS at 70°C • High Surge Current Capability - 90 Amperes • Rugged, Economical TO220AB Package • Glass Passivated Junctions for Reliability and Uniformity • Maximum Values of IGT, VGT and IH Specified for Ease of Design • High Commutating di/dt - 8.0 A/ms Minimum at 110°C • Immunity to dV/dt - 15 V/sec Minimum at 110°C • Operational in Three Quadrants: Q1, Q2, and Q3 • Device Marking: Logo, Device Type, e.g., MAC12SM, Date Code http://onsemi.com TRIACS 12 AMPERES RMS 600 thru 800 VOLTS MT2 MT1 G MARKING DIAGRAM 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12SM MAC12SN VDRM, VRRM On-State RMS Current (All Conduction Angles; TC = 70°C) IT(RMS) 12 A Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 110°C) ITSM 90 A I2t 33 A2sec PGM 16 W Circuit Fusing Consideration (t = 8.33 ms) Peak Gate Power (Pulse Width = 1.0 sec, TC = 70°C) Average Gate Power (t = 8.3 msec, TC = 70°C) MAC12xx ALYWW Unit V 1 600 800 PG(AV) 0.35 W Operating Junction Temperature Range TJ - 40 to 110 °C Storage Temperature Range Tstg - 40 to 150 °C 1. (VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2 3 TO-220AB CASE 221A Style 4 xx A L Y WW = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION Device Package Shipping MAC12SM TO220AB 50 Units/Rail MAC12SN TO220AB 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2003 April, 2003 - Rev. 2 1 Publication Order Number: MAC12SM/D MAC12SM, MAC12SN THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Symbol Value Unit RJC RJA 2.2 62.5 °C/W TL 260 °C Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Symbol Characteristic Min Typ Max Unit - - 0.01 2.0 - - 1.85 - 1.5 2.5 2.7 5.0 5.0 5.0 - 2.5 10 - 3.0 5.0 3.0 15 20 15 0.45 0.45 0.45 0.68 0.62 0.67 1.5 1.5 1.5 (di/dt)c 8.0 10 - A/ms dV/dt 15 40 - V/s di/dt - - 10 A/s OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 110°C IDRM, IRRM mA ON CHARACTERISTICS Peak On-State Voltage(1) (ITM = ± 17 A) VTM Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) IGT Holding Current (VD = 12 V, Gate Open, Initiating Current = ±200 mA) IH Latching Current (VD = 12 V, IG = 5 mA) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) IL Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) V mA mA mA VGT V DYNAMIC CHARACTERISTICS Critical Rate of Change of Commutating Current (VD = 400 V, ITM = 3.5 A, Commutating dV/dt = 10 V/s, Gate Open, TJ = 110°C, f = 500 Hz, Snubber: Cs = 0.01 f, Rs = 15 ) Critical Rate of Rise of Off-State Voltage (VD = 67% VDRM, Exponential Waveform, RGK = 1 K, TJ = 110°C) Repetitive Critical Rate of Rise of On-State Current IPK = 50 A; PW = 40 sec; diG/dt = 1 A/sec; Igt = 100 mA; f = 60 Hz 2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 MAC12SM, MAC12SN Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VTM VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current on state IH IRRM at VRRM off state IH Quadrant 3 MainTerminal 2 - VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II Quadrant I (+) IGT GATE (-) IGT GATE MT1 MT1 REF REF IGT - + IGT (-) MT2 (-) MT2 Quadrant III Quadrant 1 MainTerminal 2 + Quadrant IV (+) IGT GATE (-) IGT GATE MT1 MT1 REF REF MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 + Voltage IDRM at VDRM MAC12SM, MAC12SN 0.90 VGT, GATE TRIGGER VOLTAGE (VOLTS) IGT, GATE TRIGGER CURRENT (mA) 100 Q2 10 Q3 Q1 1 0.1 - 40 - 25 - 10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 Q1 0.85 0.80 Q3 0.75 Q2 0.70 0.65 0.60 0.55 0.50 0.45 0.40 - 40 - 25 - 10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) Figure 2. Typical Gate Trigger Voltage versus Junction Temperature Figure 1. Typical Gate Trigger Current versus Junction Temperature 100 IH, HOLDING CURRENT (mA) IL , LATCHING CURRENT (mA) 100 Q1 10 Q2 Q3 1 0.1 - 40 - 25 - 10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 10 MT2 Positive 1 MT2 Negative 0.1 - 40 - 25 - 10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 110 P(AV), AVERAGE POWER DISSIPATION (WATTS) TC , CASE TEMPERATURE (°C) 110 100 30°, 60° 90 90° 80 180° 70 DC 0 95 110 Figure 4. Typical Holding Current versus Junction Temperature Figure 3. Typical Latching Current versus Junction Temperature 60 95 110 2 4 6 8 10 IT(RMS), RMS ON-STATE CURRENT (AMPS) 12 25 DC 20 180° 120° 90° 15 60° 10 30° 5 0 0 Figure 5. Typical RMS Current Derating 2 6 8 4 10 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 6. On-State Power Dissipation http://onsemi.com 4 12 IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 100 Typical @ TJ = 25°C Maximum @ TJ = 110°C Maximum @ TJ = 25°C 10 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MAC12SM, MAC12SN 1 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1000 Figure 8. Typical Thermal Response 0.1 0.5 1.5 2.5 3.5 4.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 7. Typical On-State Characteristics http://onsemi.com 5 10000 MAC12SM, MAC12SN PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -TB SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 4: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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