ONSEMI MCR12MG

MCR12DG, MCR12MG,
MCR12NG
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave silicon gate−controlled devices are needed.
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SCRs
12 AMPERES RMS
400 thru 800 VOLTS
Features
•
•
•
•
•
•
•
•
Blocking Voltage to 800 Volts
On−State Current Rating of 12 Amperes RMS at 80°C
High Surge Current Capability − 100 Amperes
Rugged, Economical TO−220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT an IH Specified for
Ease of Design
High Immunity to dv/dt − 100 V/msec Minimum at 125°C
These are Pb−Free Devices
G
A
K
MARKING
DIAGRAM
AY WW
MCR12xG
AKA
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR12D
MCR12M
MCR12N
VDRM,
VRRM
On-State RMS Current
(180° Conduction Angles; TC = 80°C)
IT(RMS)
12
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
ITSM
100
A
Circuit Fusing Consideration (t = 8.33 ms)
I2t
41
A2sec
PGM
5.0
W
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
PG(AV)
0.5
W
Average On-State Current
(180° Conduction Angles; TC = 80°C)
IT(AV)
7.8
A
Forward Peak Gate Current
(Pulse Width ≤ 1.0 ms, TC = 90°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
−40 to +125
°C
Storage Temperature Range
Tstg
−40 to +150
°C
Forward Peak Gate Power
(Pulse Width ≤ 1.0 ms, TC = 80°C)
Value
Unit
V
November, 2012 − Rev. 5
2
TO−220
CASE 221A−09
STYLE 3
3
400
600
800
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
© Semiconductor Components Industries, LLC, 2012
1
1
A
Y
WW
x
G
AKA
= Assembly Location
= Year
= Work Week
= D, M, or N
= Pb−Free Package
= Diode Polarity
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
Package
Shipping
MCR12DG
Device
TO−220AB
(Pb−Free)
50 Units / Rail
MCR12MG
TO−220AB
(Pb−Free)
50 Units / Rail
MCR12NG
TO−220AB
(Pb−Free)
50 Units / Rail
Publication Order Number:
MCR12/D
MCR12DG, MCR12MG, MCR12NG
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
Value
Unit
RqJC
RqJA
2.2
62.5
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
−
−
−
−
0.01
2.0
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VD = Rated VDRM and VRRM; Gate Open)
IDRM,
IRRM
TJ = 25°C
TJ = 125°C
mA
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 2) (ITM = 24 A)
VTM
−
−
2.2
V
Gate Trigger Current (Continuous dc) (VD = 12 V; RL = 100 W)
IGT
2.0
8.0
20
mA
Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA)
IH
4.0
20
40
mA
Latch Current (VD = 12 V, IG = 20 mA)
IL
6.0
25
60
mA
VGT
0.5
0.65
1.0
V
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dv/dt
100
250
−
V/ms
Repetitive Critical Rate of Rise of On−State Current
IPK = 50 A, Pw = 40 msec, diG/dt = 1 A/msec, Igt = 50 mA
di/dt
−
−
50
A/ms
Gate Trigger Voltage (Continuous dc) (VD = 12 V; RL =100 W)
DYNAMIC CHARACTERISTICS
2. Indicates Pulse Test: Pulse Width v 2.0 ms, Duty Cycle v 2%.
Voltage Current Characteristic of SCR
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
+ Current
VTM
on state
IH
IRRM at VRRM
+ Voltage
IDRM at VDRM
Reverse Blocking Region
(off state)
Forward Blocking Region
(off state)
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
Reverse Avalanche Region
Anode −
TC , CASE TEMPERATURE (° C)
125
120
115
110
105
dc
100
95
90
30°
0
1
Anode +
60°
90°
180°
2
3
6
7 8
9 10 11
4 5
IT(RMS), RMS ON−STATE CURRENT (AMPS)
12
20
18
180°
16
14
90°
12
10
30°
8
6
4
2
0
0
Figure 1. Typical RMS Current Derating
1
2
6
7
3
4
5
8
9 10 11 12
IT(AV), AVERAGE ON−STATE CURRENT (AMPS)
Figure 2. On−State Power Dissipation
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2
dc
100
20
MAXIMUM @ TJ = 25°C
18
GATE TRIGGER CURRENT (mA)
I T, INSTANTANEOUS ON-STATE CURRENT (AMPS)
MCR12DG, MCR12MG, MCR12NG
MAXIMUM @ TJ = 125°C
10
1
14
12
10
8
6
4
2
0.1
0.5
1.0
1.5
2.0
2.5
0
−40 −25 −10
3.0
5
20
35
50
65
80
95 110 125
VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Typical On−State Characteristics
Figure 4. Typical Gate Trigger Current versus
Junction Temperature
1.0
VGT, GATE TRIGGER VOLTAGE (VOLTS)
100
10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
−40 −25 −10 5
20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
1
−40 −25 −10
5
20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Holding Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
100
IL , LATCHING CURRENT (mA)
IH, HOLDING CURRENT (mA)
16
10
1
−40 −25 −10
5
20
35
50
65
80
95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Latching Current versus
Junction Temperature
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3
MCR12DG, MCR12MG, MCR12NG
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
−T−
B
F
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.036
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.91
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
CATHODE
ANODE
GATE
ANODE
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MCR12/D