SIRECTIFIER SII150N06

SII150N06
NPT IGBT Modules
Dimensions in mm (1mm = 0.0394")
TC = 25oC, unless otherwise specified
Absolute Maximum Ratings
Symbol
Conditions
IGBT Wechselrichter/ IGBT Inverter
VCES
IC
TC= 25(60)oC
ICRM
TC= 60oC, tP =1ms
Ptot
TC= 25oC, Tvj= 150oC
VGES
Diode Wechselrichter/ Diode Inverter
IF
IFRM
tP =1ms
VR=0V, tP =10ms; TVj=125oC
It
Module Isolation/ Module Isolation
VISOL
RMS, f=50Hz, t=1min, NTC connect to Baseplate
2
Values
Units
600
180(150)
300
V
595
_
+20
W
150
300
A
A
2.3
As
2500
V
A
A
V
2
Sirectifier
R
SII150N06
NPT IGBT Modules
TC = 25oC, unless otherwise specified
Characteristics
Symbol
Conditions
IGBT Wechselrichter/ IGBT Inverter
VGEth
VGE = VCE, IC = 3.0mA
ICES
VGE = 0; VCE = 600V, Tj = 25(125)oC
IGES
VCE = 0; VGE=20V
VCE(sat)
Cies
Cres
LCE
Isc
td(on)
tr
td(off)
tf
Eon(Eoff)
min.
typ.
max.
Units
4.5
5.5
1(1000)
6.5
500
400
V
uA
nA
IC =150A; VGE = 15V; Tj = 25(125)oC
under following conditions
VGE = 0, VCE = 25V, f = 1MHz
1.95(2.2) 2.45(-)
o
tP 10uS, VGE 15V, Tvj = 125 C , Vcc = 360V
under following conditions:
VCC = 300V, IC = 150A
RGon = RGoff =1.5 , , Tj = 25(125)oC
VGE = ± 15V
Tj = 25(125)oC, LS = 15nH
RCC'+EE'
RthJC
Diode Wechselrichter/ Diode Inverter
under following condition
VF
IF = 150A; VGE = 0V; Tj = 25(125)oC
IRM
IF = 150A; Tj = 25(125)oC
Qr
-di/dt = 5600A/us
Erec
VGE = -10V, VR=300V
nF
40
675
nH
A
115(125)
28(30)
200(225)
25(35)
ns
ns
ns
ns
2.3(4.6)
mJ
1.0
m
0.21
K/W
1.6(-)
0.4
0.02
-40...+125
150
-40...+125
TVJ
TVJM
Tstg
Mechanical Data
Ms
to heatsink M6
Mt
to terminals M5
w
6.5
0.6
1.25(1.2)
180(215)
11(19)
-(4.7)
RthJC
RthCK
3
2.5
V
V
A
uC
mJ
K/W
o
5
5
325
C
Nm
Nm
g
Sirectifier
R
SII150N06
NPT IGBT Modules
Sirectifier
R
SII150N06
NPT IGBT Modules
Sirectifier
R