ETC DFM1200NXM33-A

DFM1200NXM33-A000
DFM1200NXM33-A000
Fast Recovery Diode Module
DS5472-1.3 October 2001
FEATURES
■ Low Reverse Recovery Charge
■ High Switching Speed
■ Low Forward Voltage Drop
KEY PARAMETERS
VRRM
VF
(typ)
(max)
IF
(max)
IFM
3300V
2.5V
1200A
2400A
■ Isolated Base
■ Dual Diodes Can Be Paralleled for 2400A Rating
■ MMC Baseplate With AlN Substrates
External connection
C1(K1)
C2(K2)
E1(A1)
E2(A2)
APPLICATIONS
■ Brake Chopper Diode
■ Boost and Buck Converters
■ Free-wheel Circuits
■ Motor Drives
■ Resonant Converters
■ Induction Heating
■ Multi-level Switch Inverters
External connection
External connection for single 2400A diode application
Fig. 1 Circuit diagram
The DFM1200NXM33-A000 is a dual 3300 volt, fast
recovery diode (FRD) module. Designed for low power
loss, the module is suitable for a variety of high voltage
applications in motor drives and power conversion.
Fast switching times and low reverse recovery losses
allow high frequency operation making the device suitable
for the latest drive designs employing pwm and high
frequency switching.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise grounded
heat sinks for safety.
E1
E2
C1
C2
ORDERING INFORMATION
Order As:
DFM1200NXM33-A000
Note: When ordering, please use the complete part number.
Outline type code: N
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
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DFM1200NXM33-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Test Conditions
Parameter
Max.
Units
Repetitive peak reverse voltage
Tvj = 125˚C
3300
V
IF
Forward current (per arm)
DC, Tcase = 70˚C
1200
A
IFM
Max. forward current
Tcase = 115˚C, tp = 1ms
2400
A
I2t
I2t value fuse current rating
VR = 0, tp = 10ms, Tvj = 125˚C
720
kA2s
Pmax
Maximum power dissipation
Tcase = 25˚C, Tvj = 125˚C
5880
W
Visol
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
6
kV
Qpd
Partial discharge
IEC1287. V1 = 2450V, V2 = 1800V, 50Hz RMS
10
pC
VRRM
THERMAL AND MECHANICAL RATINGS
Internal insulation:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
Parameter
Symbol
Rth(j-c)
AlN
AlSiC
33mm
20mm
175
Thermal resistance - diode (per arm)
Test Conditions
Continuous dissipation -
Min.
Typ.
Max.
Units
-
-
17
˚C/kW
-
-
6
˚C/kW
junction to case
Rth(c-h)
Tj
Tstg
-
Thermal resistance - case to heatsink
Mounting torque 5Nm
(per module)
(with mounting grease)
Junction temperature
-
-
-
125
˚C
Storage temperature range
-
–40
-
125
˚C
Mounting - M6
-
-
5
Nm
Electrical connections - M8
-
-
10
Nm
Screw torque
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DFM1200NXM33-A000
STATIC ELECTRICAL CHARACTERISTICS - PER ARM
Tvj = 25˚C unless stated otherwise.
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Units
IRM
Peak reverse current
VR = 3300V, Tvj = 125˚C
-
-
90
mA
VF
Forward voltage
IF = 1200A
-
2.5
-
V
IF = 1200A, Tvj = 125˚C
-
2.5
-
V
-
25
-
nH
Test Conditions
Min.
Typ.
Max.
Units
IF = 1200A,
-
1000
-
A
L
Inductance
-
DYNAMIC ELECTRICAL CHARACTERISTICS - PER ARM
Tvj = 25˚C unless stated otherwise.
Parameter
Symbol
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
dIF/dt = 5600A/µs,
-
650
-
µC
Erec
Reverse recovery energy
VR = 1800V
-
750
-
mJ
Test Conditions
Min.
Typ.
Max.
Units
IF = 1200A,
-
1050
-
A
Tvj = 125˚C unless stated otherwise.
Symbol
Parameter
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
dIF/dt = 4500A/µs,
-
1000
-
µC
Erec
Reverse recovery energy
VR = 1800V
-
1250
-
mJ
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DFM1200NXM33-A000
TYPICAL CHARACTERISTICS
100
2400
Tj = 25˚C
Tj = 125˚C
Transient thermal impedance, Zth (j-c) - (°C/kW )
2200
2000
1800
Forward current, IF - (A)
1600
1400
1200
1000
800
600
400
Diode
10
1
200
Diode
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.1
0.001
4.0
0.01
Forward voltage, VF - (V)
Fig. 2 Diode typical forward characteristics
Ri (˚C/KW)
τi (ms)
1
0.4646
0.0843
2
3
4
2.46 3.4987 10.5854
3.7205 33.2138 236.5275
0.1
Pulse width, tp - (s)
10
1
Fig. 4 Transient thermal impedance
2000
6000
5500
1800
5000
1600
1400
DC forward current - IF - (A)
Power Dissipation - Ptot (W)
4500
4000
1200
3500
1000
3000
2500
2000
800
600
1500
400
1000
200
500
0
25
50
75
100
Case temperature, Tcase - (°C)
Fig. 5 Power dissipation
125
150
0
0
25
50
75
100
Case temperature, Tcase - (°C)
125
150
Fig. 6 DC current rating vs case temperature
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DFM1200NXM33-A000
2100
Tj = 125˚C
Reverse recovery current, Irr - (A)
1800
1500
1200
900
600
300
0
0
500
1000
1500
2000
2500
Reverse voltage, VR - (V)
3000
3500
Fig. 7 RBSOA
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DFM1200NXM33-A000
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
62
62
20
20
C1
E2
43.5
57
65
18
57
65
E1
C2
20
6x Ø7
38
31.5
4x M8
5
140
Nominal weight: 1000g
Module outline type code: N
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
Datasheet Annotations:
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Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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