SIRECTIFIER SID100S12

SID100S12
SPT IGBT Modules
Dimensions in mm (1mm = 0.0394")
TC = 25oC, unless otherwise specified
Absolute Maximum Ratings
Symbol
IGBT
VCES
IC
ICRM
VGES
TVj,(Tstg)
Conditions
o
TC= 25(80) C
TC= 25(80)oC, tP =1ms
_ Tstg
TOPERATION <
AC, 1min
Visol
Inverse Diode
IF=-IC
TC= 25(80)oC
TC= 25(80)oC, tP =1ms
IFRM
IFSM
tP =10ms; sin.;Tj=150 oC
Values
Units
1200
V
145(105)
290(210)
_
+20
A
A
_ 40...+150(125)
o
V
C
4000
V
95(65)
290(210)
A
A
720
A
SID100S12
SPT IGBT Modules
TC = 25oC, unless otherwise specified
Characteristics
Symbol
IGBT
VGE(th)
ICES
VCE(TO)
rCE
VCE(sat)
Cies
Coes
Cres
LCE
RCC'+EE'
Conditions
VGE = VCE, IC = 3mA
VGE = 0; VCE = VCES; Tj = 25(125)oC
Tj = 25(125)oC
VGE = 20V, Tj = 25(125)oC
IC = 50A; VGE = 15V; chip level
under following conditions
VGE = 0, VCE = 25V, f = 1MHz
min.
4.8
typ.
max.
5.5
6.45
0.1
0.3
1(0.9) 1.15(1.05)
13(16)
16(20)
1.9(2.1) 2.35(2.55)
6.2
25
res., terminal-chip TC = 25(125) C
under following conditions:
VCC = 600V, IC = 50A
RGon = RGoff = 15 , Tj = 125oC
VGE = ± 15V
td(on)
tr
td(off)
tf
Eon(Eoff)
Inverse Diode
under following conditions:
VF = VEC IF = 75A; VGE = 0V; Tj = 25(125)oC
V(TO)
Tj = 25(125)oC
rT
Tj = 25(125)oC
IRRM
IF = 75A; Tj = 125oC
Qrr
di/dt = 3100A/us
Err
VGE = V
Thermal Characteristics
Rth(j-c)
per IGBT
Rth(j-c)D
per Inverse Diode
Rth(c-s)
per module
Mechanical Data
Ms
to heatsink M6
Mt
to terminals M5
w
0.75(1)
nH
m
150
45
560
50
8.5(7.5)
ns
ns
ns
ns
mJ
2(1.8)
1.05
13
105
10.5
2.5
1.3
16
V
V
m
A
uC
mJ
0.21
0.5
K/W
K/W
0.05
K/W
5
5
160
Nm
Nm
g
3.4
3
2.5
V
mA
V
m
V
nF
0.74
0.71
o
Units