WEITRON S9012LT1

S9012LT1
PNP General Purpose Transistors
3
P b Lead(Pb)-Free
1
2
SOT-23
V CEO
Value
-25
-40
-5
-500
300
2.4
417
S9012LT1=2T1
-25
-0.1
-40
-100
-5.0
-100
E=-20Vdc, I E= 0
-40
-5.0
WEITRON
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)
O
-0.1
u
-0.1
u
-0.1
u
S9012LT1
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
120
350
40
-
-
ON CHARACTERISTICS
DC Current Gain
(IC=-50 mAdc, VCE=-1.0 Vdc)
(IC=-500 mAdc, VCE=-1.0 Vdc)
hFE (1)
hFE (2)
Collector-Emitter Saturation Voltage
(IC=-500 mAdc, IB=-50mAdc)
VCE(sat)
-
-0.6
Vdc
Base-Emitter Saturation Voltage
(IC=-500 mAdc, IB=-50mAdc)
VBE(sat)
-
-1.2
Vdc
VEBF
-
-1.4
Vdc
fT
150
Base-Emitter Voltage
( I E=-100mA)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(IC=-20 mAdc, VCE=-6 Vdc, f=30MHz)
-
CLASSIFICATION OF hFE
Rank
Range
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L
120-200
H
200-350
MHz
S9012LT1
1000
VCE = -1V
IB=-300uA
IB=-250uA
-40
hFE, DC CURRENT GAIN
I C , CO LLECTOR CURRENT (mA)
-50
IB=-200uA
-30
IB=-150uA
IB=-100uA
-20
IB=-50uA
100
-10
0
0
-10
-20
-30
-40
10
-10
-50
-100
I C , CO LLECTOR CURRENT (mA)
VCE , COLLECTOR-EMITTER VOLTAGE (VoLTS)
Figure 2. DC c urrent Gain
-1000
V BE(sat)
VCE (sat)
I C=10I B
-10
10
100
1000
I C , COLLECTOR CURRENT (mA)
Fig ure 3. Base-Emitter Saturation Voltage
Co llector-Emitter Saturation Vo ltage
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f T , CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
VBE(s at), VCE(s at) , SATURATION VOLTAGE (mA)
Figure 1. St atic Characteristic
-100
-1000
1000
VCE = - 6V
100
10
1
1
10
100
1000
10000
I C , COLLECTOR CURRENT
Figure 4. Curre nt Gain Bandwidth Product