S9012LT1 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 V CEO Value -25 -40 -5 -500 300 2.4 417 S9012LT1=2T1 -25 -0.1 -40 -100 -5.0 -100 E=-20Vdc, I E= 0 -40 -5.0 WEITRON http://www.weitron.com.tw ) O -0.1 u -0.1 u -0.1 u S9012LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Unit Min Max 120 350 40 - - ON CHARACTERISTICS DC Current Gain (IC=-50 mAdc, VCE=-1.0 Vdc) (IC=-500 mAdc, VCE=-1.0 Vdc) hFE (1) hFE (2) Collector-Emitter Saturation Voltage (IC=-500 mAdc, IB=-50mAdc) VCE(sat) - -0.6 Vdc Base-Emitter Saturation Voltage (IC=-500 mAdc, IB=-50mAdc) VBE(sat) - -1.2 Vdc VEBF - -1.4 Vdc fT 150 Base-Emitter Voltage ( I E=-100mA) SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (IC=-20 mAdc, VCE=-6 Vdc, f=30MHz) - CLASSIFICATION OF hFE Rank Range WEITRON http://www.weitron.com.tw L 120-200 H 200-350 MHz S9012LT1 1000 VCE = -1V IB=-300uA IB=-250uA -40 hFE, DC CURRENT GAIN I C , CO LLECTOR CURRENT (mA) -50 IB=-200uA -30 IB=-150uA IB=-100uA -20 IB=-50uA 100 -10 0 0 -10 -20 -30 -40 10 -10 -50 -100 I C , CO LLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VoLTS) Figure 2. DC c urrent Gain -1000 V BE(sat) VCE (sat) I C=10I B -10 10 100 1000 I C , COLLECTOR CURRENT (mA) Fig ure 3. Base-Emitter Saturation Voltage Co llector-Emitter Saturation Vo ltage WEITRON http://www.weitron.com.tw f T , CURRENT GAIN-BANDWIDTH PRODUCT (MHz) VBE(s at), VCE(s at) , SATURATION VOLTAGE (mA) Figure 1. St atic Characteristic -100 -1000 1000 VCE = - 6V 100 10 1 1 10 100 1000 10000 I C , COLLECTOR CURRENT Figure 4. Curre nt Gain Bandwidth Product