@vic SOT-23 Plastic-Encapsulate Transistors SOT-23 AV9012LT1 1. BASE TRANSISTOR (PNP) 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range 0. 95 0.3 1. 9 PCM: Unit: mm TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100µA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-40 V, IE=0 -0.1 µA Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 µA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 µA hFE(1) VCE=-1V, IC= -50mA 120 hFE(2) VCE=-1V, IC=-500mA 40 Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500 mA, IB= -50mA -1.2 V 400 DC current gain fT Transition frequency CLASSIFICATION OF hFE(1) Rank Range DEVICE MARKING VCE=-6V, IC= -20mA f=30MHz 150 MHz L H J 120-200 200-350 300-400 S9012LT1=2T1 Copyright @vic Electronics Corp. Website http://www.avictek.com