AVICTEK 2T1

@vic
SOT-23 Plastic-Encapsulate Transistors
SOT-23
AV9012LT1
1. BASE
TRANSISTOR (PNP)
2. EMITTER
3. COLLECTOR
1. 0
FEATURES
Power dissipation
2. 4
1. 3
W (Tamb=25℃)
0. 95
0. 4
2. 9
Collector current
ICM:
-0.5
A
Collector-base voltage
V(BR)CBO:
-40
V
Operating and storage junction temperature range
0. 95
0.3
1. 9
PCM:
Unit: mm
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= -100µA, IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic= -1mA, IB=0
-25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-40 V, IE=0
-0.1
µA
Collector cut-off current
ICEO
VCE=-20V, IB=0
-0.1
µA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-0.1
µA
hFE(1)
VCE=-1V, IC= -50mA
120
hFE(2)
VCE=-1V, IC=-500mA
40
Collector-emitter saturation voltage
VCE(sat)
IC=-500 mA, IB= -50mA
-0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=-500 mA, IB= -50mA
-1.2
V
400
DC current gain
fT
Transition frequency
CLASSIFICATION OF hFE(1)
Rank
Range
DEVICE MARKING
VCE=-6V, IC= -20mA
f=30MHz
150
MHz
L
H
J
120-200
200-350
300-400
S9012LT1=2T1
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Website http://www.avictek.com