BC808 PNP Transistor Surface Mount COLLECTOR 3 P b Lead(Pb)-Free SOT-23 3 1 BASE FEATURES: * Suitable for AF-Driver stages and low power output stages * Complement to BC818 1 2 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -25 -30 -5 -0.8 Symbol Max Unit Maximum Power Dissipation Total Power Dissipation (Ta=25°C) PD 300 mW Junction Temperature TJ 150 °C Storage Temperature Tstg -65 -150 °C Unit V V V A Thermal Characteristics Characteristics Electrical Characteristics (TA=25°C Unless Otherwise noted) Characteristics Symbol Min Max Unit Collector-Emitter BreakdownVoltage (IC=-10mA, IB=0) V(BR)CEO -25 - V Collector-Base Breakdown Voltage (IC=-100μA, IE=0) V(BR)CBO -30 - V Emitter-Base Breakdown Voltage (IE=-100 μA, IC=0) V(BR)EBO -5 - V Off Characteristics Collect Cut-off Current (VCB= -25V, IE=0) I CBO - -0.1 μA Emitte Cut-off Current (VEB=-4V, IC=0) I EBO - -0.1 μA WEITRON http://www.weitron.com.tw 1/4 09-Jul-07 BC808 Electrical Characteristics (TA=25˚C unless otherwise noted) (Countinued) Symbol MIN DC Current Gain (VCE=-1V, IC= -100mA) (VCE=-1V, IC= -300mA) h FE(1) h FE(2) 100 60 - Collector-Emitter Saturation Voltage (IC = -500mA,IB= -50mA) VCE(sat) Characteristics TYP UNIT MAX On Characteristics Base-Emitter Voltage (VCE=-1V, IC= -300mA) Transition frequency (VCE = -5V, IC=-10mA, f=50MHz) Collector output Capacitance (VCB = -10 V, IE=0, f=1 MHz) CLASSIFICATION OF - - 630 - - - 0.7 V VBE - - -1.2 V fT - 100 - MHz Cob - 12 - pF - hFE Rank Range hFT(1) Marking WEITRON http://www.weitron.com.tw 16 25 40 100-250 160-400 250-630 5E 5F 5G 2/4 09-Jul-07 BC808 Characteristics Curve -20 -400 -300 E -200 IE = - 1.0mA Pr = 600 mW IE = - 0.5mA -100 -0 IE = mA - 5.0 A I E = - 4.5m A = I E - 4.0m I E = 3.5mAA I E = - 3.0m A I E = - 2.5m IE = 0mA - 2. IE = A 1.5m I =- IC[mA],COLLECTOR CURRENT IC[mA],COLLECTOR CURRENT -500 -16 IE = µA - 50 -12 IE = µA - 40 µA - 30 IE = -8 IE = - 0µA IE = - 1 IE = 0 -0 -1 -2 -3 -0 -5 -4 IE = 0µA -0 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE VCE = - 2.0V 100 - 1.0V 10 -10 -20 -30 -50 -40 VCE[V], COLLECTOR-EMITTER VOLTAGE PULSE -1 -10 Figure 2. Static Characteristic 1000 1 -0.1 20µA -4 Figure 1. Static Characteristic hFE, DC CURRENT GAIN Pr = 60 0m W µA - 60 IE = VCE[V], COLLECTOR-EMITTER VOLTAGE -1000 -100 -10 IC = 101E PULSE VCE(sat) -1 -0.1 VCE(sat) -0.01 -0.1 IC[mA], COLLECTOR CURRENT -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 -1000 f = 1.0MHz VCE = - 1V PULSE CO, Cob[pF], CAPACITANCE IC[mA] COLLECTOR CURRENT µA - 80 µA - 70 IE = -100 -10 -1 -0.1 -0.4 -0.5 -0.6 -0.7 -0.8 -1 -10 -100 VCE[V], COLLECTOR-BASE VOLTAGE VBE[V], EMITTER-BASE VOLTAGE Figure 5. Ease-Emitter On Voltage http://www.weitron.com.tw Cob 10 1 -0.1 -0.9 VBE[V], BASE-EMITTER VOLTAGE WEITRON Cob Figure 6. Input Output Capacitance 3/4 09-Jul-07 BC808 Characteristics Curve fT[MHz], GAIN BANDWIDTH PRODUCT 1000 VCE = - 5.0V 100 10 -10 -0 -100 IC[mA], COLLECTOR CURRENT Figure 7. Current Gain Bandwidth Product WEITRON http://www.weitron.com.tw 4/4 09-Jul-07