WEITRON SS8550LT1_09

SS8550LT1
PNP General Purpose Transistors
3
P b Lead(Pb)-Free
1
2
SOT-23
VCEO
Value
-25
-40
-5.0
-1500
300
2.4
417
-25
-0.1
-40
-100
-5.0
-100
O
E=-20Vdc, I E= 0)
-40
-5.0
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-0.15
u
-0.15
u
-0.15
u
Rev.A 10-Apr-09
SS8550LT1
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Min
Max
Unit
120
600
-
VCE(sat)
-
-0.5
Vdc
fT
100
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC=-100 mAdc, VCE=1.0 Vdc)
hFE (1)
Collector-Emitter Saturation Voltage
(IC=-800 mAdc, IB=-80mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(IC=-50 mAdc, VCE=-10 Vdc, f=30MHz)
-
MHz
CLASSIFICATION OF hFE(1)
Rank
P
Q
R
S
Range
120-200
150-300
200-400
300-600
Marking
1HB
1HD
1HF
1HH
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Rev.A 10-Apr-09
SS8550LT1
10 00
-0.5
VCE = -1V
IB=-3.5mA
-0.4
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
IB=-4.0mA
IB=-3.0mA
IB=-2.5mA
-0.3
IB=-2.0mA
IB=-1.5mA
-0.2
IB=-1.0mA
-0.1
10 0
10
IB=-0.5mA
-0.4
-0.8
-1.2
-1.6
1
-0.1
-2.0
-1
VCE[V], COLLECTOR-EMITTER VOLTAGE
-100
FIG.2 DC Current Gain
-10000
-100
VCE = -1V
IC[mA], COLLECTOR CURRENT
IC=10IB
-100 0
VBE(sat)
-100
VCE(sat)
-10
-0.1
-1000
IC[mA], COLLECTOR CURRENT
FIG.1 Static Characteristic
VBE(s at), VCE(s at)[V], SATURATION VOLTAGE
-10
-1
-10
-100
-10
-1
-0.1
-0.0
-1000
-0.2
-0.6
-0.8
-1.0
-1.2
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
FIG.3 Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
-0.4
FIG.4 Base-Emitter On Voltage
1000
VCE=-10V
100
10
-1
-10
-100
-1000
IC[mA], COLLE CTOR CURRENT
FIG.5 Current Gain Bandwidth Product
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Rev.A 10-Apr-09
SS8550LT1
SOT-23 Outline Dimension
SOT-23
Dim
A
B
C
D
E
G
H
J
K
L
M
A
B
TOP VIEW
C
D
E
G
H
K
J
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M
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Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
Rev.A 10-Apr-09