MITSUBISHI RA30H4452M-101

MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA30H4452M
RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO
DESCRIPTION
The RA30H4452M is a 30-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 440- to
520-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power
with the input power.
BLOCK DIAGRAM
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• 66 x 21 x 9.8 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
2
3
1
4
5
1
RF Input (Pin)
2
Gate Voltage (VGG), Power Control
3
Drain Voltage (VDD), Battery
4
RF Output (Pout)
5
RF Ground (Case)
PACKAGE CODE: H2S
RoHS COMPLIANCE
• RA30H4452M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA30H4452M-101
Antistatic tray,
10 modules/tray
RA30H4452M
MITSUBISHI ELECTRIC
1/7
1 Aug 2006
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA30H4452M
RoHS COMPLIANCE
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD
Drain Voltage
VGG<5V
VGG
Gate Voltage
VDD<12.5V, Pin=0mW
Pin
Input Power
Pout
Output Power
Tcase(OP)
Tstg
RATING
UNIT
17
V
6
V
100
mW
45
W
Operation Case Temperature Range
-30 to +110
°C
Storage Temperature Range
-40 to +110
°C
TYP
MAX
UNIT
520
MHz
f=440-520MHz,
ZG=ZL=50Ω
Above Parameters are guaranteed independently
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
CONDITIONS
MIN
Frequency Range
440
Pout
Output Power
30
W
ηT
Total Efficiency
40
%
nd
Harmonic
VDD=12.5V,
VGG=5V,
-25
dBc
Pin=50mW
3:1
—
2fo
2
ρin
Input VSWR
IGG
Gate Current
—
Stability
VDD=10.0-15.2V, Pin=25-70mW,
Pout<40W (VGG control), Load VSWR=3:1
—
Load VSWR Tolerance
VDD=15.2V, Pin=50mW, Pout=30W (VGG control),
Load VSWR=20:1
1
mA
No parasitic oscillation
—
No degradation or destroy
—
All Parameters, Conditions, Ratings and Limits are subject to change without notice
RA30H4452M
MITSUBISHI ELECTRIC
2/7
1 Aug 2006
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA30H4452M
30
60
ηT @ Pout=30W (VGG control)
40
20
20
ρin @ Pout=30W (VGG control)
0
470
490
510
40
20
10
0
0
530
20
60
80
0
100
Pout
40
80
30
60
ηT
20
40
10
20
f=480MHz,
VDD=12.5V,
VGG=5V
20
40
60
OUTPUT POWER Pout (W)
OUTPUT POWER and TOTAL EFFICIENCY
versus INPUT POWER
100
50
TOTAL EFFICIENCY ηT (%)
OUTPUT POWER and TOTAL EFFICIENCY
versus INPUT POWER
50
100
80
30
60
ηT
20
10
100
20
60
ηT
20
40
20
VGG=5V,
Pin=50mW
0
2
4
6
8
OUTPUT POWER Pout (W)
80
TOTAL EFFICIENCY ηT (%)
40
0
80
30
20
40
f=440MHz,
VDD=12.5V,
Pin=50mW
10
2.5
40
f=480MHz,
VDD=12.5V,
Pin=50mW
20
0
0
4
4.5
5
5.5
6
OUTPUT POWER Pout (W)
ηT
TOTAL EFFICIENCY ηT (%)
60
30
3.5
3
3.5
4
4.5
5
5.5
6
OUTPUT POWER and TOTAL EFFICIENCY
versus GATE VOLTAGE
60
80
3
20
0
2
100
40
2.5
60
ηT
GATE VOLTAGE VGG (V)
Pout
2
100
0
0
OUTPUT POWER and TOTAL EFFICIENCY
versus GATE VOLTAGE
60
10
0
100
40
DRAIN VOLTAGE VDD (V)
20
80
Pout
50
10 12 14 16 18
50
60
OUTPUT POWER and TOTAL EFFICIENCY
versus GATE VOLTAGE
60
100
10
40
INPUT POWER Pin (mW)
520MHz
30
20
f=520MHz,
VDD=12.5V,
VGG=5V
0
OUTPUT POWER and TOTAL EFFICIENCY
versus DRAIN VOLTAGE
70
440MHz
Pout
480MHz
60
50
40
0
0
80
Pout
40
INPUT POWER Pin (mW)
OUTPUT POWER Pout (W)
40
INPUT POWER Pin (mW)
0
OUTPUT POWER Pout (W)
20
f=440MHz,
VDD=12.5V,
VGG=5V
FREQUENCY f (MHz)
0
50
100
Pout
40
80
30
60
ηT
20
40
f=520MHz,
VDD=12.5V,
Pin=50mW
10
20
0
0
2
GATE VOLTAGE VGG (V)
RA30H4452M
60
ηT
TOTAL EFFICIENCY ηT (%)
450
30
2.5
3
3.5
4
4.5
5
5.5
TOTAL EFFICIENCY ηT (%)
0
430
OUTPUT POWER and TOTAL EFFICIENCY
versus INPUT POWER
100
50
Pout
80
40
TOTAL EFFICIENCY ηT (%)
80
OUTPUT POWER Pout (W)
40
10
OUTPUT POWER Pout (W)
100
Pout @VGG=5V
TOTAL EFFICIENCY ηT (%)
VDD=12.5V,
Pin=50mW
50
INPUT VSWR ρin
OUTPUT POWER Pout (W)
60
OUTPUT POWER, TOTAL EFFICIENCY
and INPUT VSWR versus FREQUENCY
TOTAL EFFICIENCY ηT (%)
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
6
GATE VOLTAGE VGG (V)
MITSUBISHI ELECTRIC
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1 Aug 2006
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA30H4452M
OUTLINE DRAWING (mm)
66.0 ±0.5
7.25 ±0.8
51.5 ±0.5
3
2.0 ±0.5
2
4
4.0 ±0.3
9.5 ±0.5
5
1
14.0 ±1
2-R2 ±0.5
17.0 ±0.5
60.0 ±0.5
21.0 ±0.5
3.0 ±0.3
Ø0.45 ±0.15
12.0 ±1
16.5 ±1
43.5 ±1
(50.4)
(9.88)
2.3 ±0.3
7.5 ±0.5
0.09 ±0.02
3.1 +0.6/-0.4
55.5 ±1
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
RA30H4452M
MITSUBISHI ELECTRIC
4/7
1 Aug 2006
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA30H4452M
TEST BLOCK DIAGRAM
DUT
Power
Meter
1
Signal
Generator
Attenuator
Preamplifier
Attenuator
Directional
Coupler
2
C1, C2: 4700pF, 22uF in parallel
3
4
ZL=50Ω
ZG=50Ω
C1
Spectrum
Analyzer
5
Directional
Coupler
Attenuator
Power
Meter
C2
+
DC Power
Supply VGG
+
DC Power
Supply VDD
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
3
2
1
4
5
RA30H4452M
MITSUBISHI ELECTRIC
5/7
1 Aug 2006
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA30H4452M
PRECAUTIONS, RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered on a copper flange. For mechanical protection a plastic cap
is attached by Silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate and
coated by resin. Lines on the substrate (eventually inductors), chip capacitors and resistors form the bias and
matching circuits. Wire leads soldered onto the alumina substrate provide DC and RF connection.
Following conditions shall be avoided:
a) Bending forces on the alumina substrate (for example during screwing or by fast thermal changes)
b) Mechanical stress on the wire leads (for example by first soldering then screwing or by thermal expansion)
c) Defluxing solvents reacting with the resin coating the MOSFET chips (for example Trichloroethylene)
d) Frequent on/off switching causing thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, oscillation, etc.
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
The heat sink flatness shall be less than 50µm (not flat heat sink or particles between module and heat sink may
cause the ceramic substrate in the module to crack by bending forces, either immediately when screwing or later
when thermal expansion forces are added).
Thermal compound between module and heat sink is recommended for low thermal contact resistance and to
reduce the bending stress on the ceramic substrate caused by temperature difference to the heat sink.
The module shall first be screwed to the heat sink, after this the leads can be soldered to the PCB.
M3 screws are recommended with tightening torque 0.4 to 0.6Nm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads shall be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause
bubbles in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are:
IDD @ ηT=40%
VDD
Pout
Rth(ch-case)
Pin
Stage
(°C/W)
(A)
(W)
(W)
(V)
st
1
0.05
1.5
29.0
0.18
12.5
2nd
1.5
9.0
2.4
1.60
rd
3
9.0
30.0
1.2
4.20
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (12.5V x 0.18A - 1.5W + 0.05W) x 29.0°C/W = Tcase + 23.2 °C
Tch2 = Tcase + (12.5V x 1.60A - 9.0W + 1.50W) x 2.4°C/W = Tcase + 30.0 °C
Tch3 = Tcase + (12.5V x 4.20A - 30.0W + 9.0W) x 1.2°C/W = Tcase + 37.8 °C
For long term reliability the module case temperature Tcase is better kept below 90°C. For an ambient temperature
Tair=60°C and Pout=30W the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) - Pout + Pin ) of the heat
sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (30W/40% – 30W + 0.05W) = 0.67 °C/W
When mounting the module with the thermal resistance of 0.67 °C/W, the channel temperature of each stage
transistor is:
Tch1 = Tair + 53.2 °C
Tch2 = Tair + 60.0 °C
Tch3 = Tair + 67.8 °C
175°C maximum rating for the channel temperature ensures application under derated conditions.
RA30H4452M
MITSUBISHI ELECTRIC
6/7
1 Aug 2006
MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA30H4452M
Output Power Control:
Depending on linearity following 2 methods are recommended to control the output power:
a) Non-linear FM modulation:
By Gate voltage VGG.
When the Gate voltage is close to zero, the RF input signal is attenuated up to 60dB and only a small leakage
current is flowing from the battery into the Drain.
Around VGG=2.5V the output power and Drain current increases strongly.
Around VGG=3.5V, latest at VGG=5V, the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin.
The Gate voltage is used to set the Drain quiescent current for the required linearity.
Oscillation:
To test RF characteristic this module is put on a fixture with 2 bias decoupling capacitors each on Gate and Drain,
a 4.700pF chip capacitor, located close to the module, and a 22µF electrolytic capacitor.
When an amplifier circuit around this module shows oscillation following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module ?
b) Is the load impedance ZL=50Ω ?
c) Is the source impedance ZG=50Ω ?
Frequent on/off switching:
In Base Stations frequent on/off switching can result in reduced or no output power, when the resin that coats the
transistor chips gets thermally expanded by the on/off switching. The bond wires in the resin will break after long
time thermally induced mechanical stress.
Quality and Failure in Time (FIT):
MITSUBISHI ELECTRIC cannot take any liability for failures resulting from Base Station operation time or operating
conditions exceeding those in Mobile Radios.
The technology of this module is the result of more than 20 years experience, field proven in several 10 million
Mobile Radios. Today most returned modules show failures as ESD, substrate crack, transistor burn-out, etc which
are caused by handling or operating conditions. Few degradation failures can be found.
FIT calculation based on field failures: 3 years after shipping 2.7 million modules 20 modules with degradation
failures had been returned. Assuming 1 hour operation every day in these 3 years results in 7 FIT.
Not all field failures are returned and the FIT rate strongly depends on the operating conditions.
Our target for this module technology is 500 FIT.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may
lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your
circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
RA30H4452M
MITSUBISHI ELECTRIC
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1 Aug 2006