MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU08BA-130 HIGH POWER INVERTER USE PRESS PACK TYPE GCU08BA-130 ● Symmetrical GCT unit ● GCT and gate driver are connected ● ITQRM: Repetitive controllable on-state current ........ 800A ● IT(AV): Average on-state current ..................... 330A ● VDRM: Repetitive peak off-state voltage ....... 6500V ● VRRM: Repetitive peak reverse voltage ........ 6500V ● Tj: Operation junction temperature ......... 125°C APPLICATION Current source inverters, DC choppers, Induction heaters, DC to DC converter OUTLINE DRAWING Dimensions in mm (208) (104) (160) (120) (20) G G 80±0.5 K G DE1 DE2 TPG TPX LED4 LED3 LED2 LED1 K G (85) (140) K K (165) G 0.2 7± φ4 K (250) 9MAX G (80) K (48) (46.5) (46.5) (48) (5) (20) (80) 6±0.5 6±0.5 φ47±0.2 10MIN A (1.6) 6±0.5 (13.7) 6±0.5 14.5±1.3 20MAX 160MIN 10.1±0.9 26.2±0.3 40MAX A PART MAGNIFICATION Mar. 2004 MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU08BA-130 HIGH POWER INVERTER USE PRESS PACK TYPE GCT PART MAXIMUM RATINGS Symbol VRRM VRSM VDRM VDSM V(LTDS) Conditions Parameter — Repetitive peak reverse voltage — Non-repetitive peak reverse voltage Repetitive peak off-state voltage Gate driver energized Non-repetitive peak off-state voltage Gate driver energized Long term DC stability voltage Gate driver energized, λ = 100 Fit Symbol IT(RMS) IT(AV) Parameter RMS on-state current Average on-state current Repetitive controllable on-state current Surge on-state current Current-squared, time integration Critical rate of rise of on-state current Critical rate of rise of reverse recovery current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak reverse gate current ITQRM ITSM I2t diT/dt diR/dt PFGM PRGM PFG(AV) PRG(AV) VFGM VRGM IFGM IRGM Conditions Applied for all condition angles f = 60Hz, sinewave θ = 180°, Tf = 62°C VDM = 3/4 VDRM, VD = 3000V, LC = 0.3µH (See Fig. 1, 3) Tj = 25/125°C One half cycle at 60Hz, Tj = 125°C start VD = 3000V, IT = 800A, CS = 0.1µF, RS = 10Ω (See Fig. 1, 2) Tj = 25/125°C, f = 60Hz IT = 800A, VR = 3000V, Tj = 25/125°C CS = 0.1µF, RS = 10Ω (See Fig. 4, 5) Voltage class 6500 6500 6500 6500 3600 Unit V V V V V Ratings 520 330 Unit A A 800 A 4.8 9.6 × 104 kA A2s 1000 A/µs 1000 A/µs 5 17 kW kW 100 120 10 21 500 800 W W V V A A ELECTRICAL CHARACTERISTICS Parameter Conditions tgt td On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Turn-on delay time Eon Turn-on switching energy IT = 400A, Tj = 125°C VRM = 6500V, Tj = 125°C VDM = 6500V, Tj = 125°C, Gata driver energized VRG = 21V, Tj = 125°C VD = 3000V, Tj = 125°C Gate driver energized (Expo. wave) IT = 800A, VD = 3000V, di/dt = 1000A/µs, Tj = 125°C CS = 0.1µF, RS = 10Ω (See Fig. 1, 2) IT = 400A, VD = 3000V, di/dt = 1000A/µs (See Fig. 1, 2) CS = 0.1µF, RS = 10Ω, Tj = 125°C ts Storage time Eoff Turn-off switching energy QRR Reverse recovery charge Reverse recovery energy Gate trigger current Gate trigger voltage Symbol VTM IRRM IDRM IGRM dv/dt Erec IGT VGT IT = 800A, VDM = 3/4 VDRM, VD = 3000V CS = 0.1µF, RS = 10Ω, Tj = 125°C (See Fig. 1, 5) IT = 400A, VDM = 4000V, VD = 3000V CS = 0.1µF, RS = 10Ω, Tj = 125°C (See Fig. 1, 5) VR = 3000V, IT = 400A, di/dt = 1000A/µs CS = 0.1µF, RS = 10Ω, Tj = 125°C (See Fig. 4, 5) VD = 24V, RL = 0.1Ω, Tj = 25°C DC method Min — — — — Limits Typ — — — — Max 5.5 250 100 40 3000 — — V/µs — — — — 5 1 µs µs — — 0.6 J/P — — 3 µs — — 2.3 J/P — — — — — — — — 1800 4.4 0.5 1.5 µC J/P A V Unit V mA mA mA Mar. 2004 MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU08BA-130 HIGH POWER INVERTER USE PRESS PACK TYPE GATE DRIVER PART Parameter Symbol VGIN PGIN tfd trd Power supply voltage Gate power consumption Delay time of on gate current Delay time of off gate current — Control signal — Power supply connector — Status signal Conditions DC power supply IT = 420Arms, f = 780Hz, duty = 0.33 Ta = 25°C Ta = 25°C Optical fiber data link Transmitter : HFBR-1521 : Agilent Receiver : HFBR-2521 : Agilent Phoenix contact Type name : MSTB25/2-G-508AU — (Note 1) Min 19 — — Limits Typ 20 — — — Max 21 35 3.0 3.0 — — — — — — — — — — — — Min 11.1 — — — Limits Typ 13 1100 47 26 Max 15.8 — — — Min –10 –10 –10 — Limits Typ — — — — Max 125 60 60 0.025 Unit V W µs µs MECHANICAL DATA Parameter Symbol FM — — — Conditions Mounting force Weight Pole piece diameter (GTC device) ±0.2mm Housing thickness (GTC device) ±0.5mm — — Unit kN g mm mm THERMAL DATA Symbol Tj Tstg Ta Rt(j-f) Parameter Junction operating temperature Storage temperature Ambient operation temperature Thermal resistance Conditions — — Recommend : ≤ 40°C Junction to Fin Unit °C °C °C K/W Mar. 2004 MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU08BA-130 HIGH POWER INVERTER USE PRESS PACK TYPE IT VD VD td tgt t(Eoff) = 100µs ts trd tfd IGM diG/dt td ; 0VRG ~ 0.9VD tgt ; 0VRG ~ 0.1VD ts ; 0VRG ~ 0.9IT diG/dt ; 0.1IGM ~ 0.9IGM tw ; 0VRG ~ 0.9IGM diGQ/dt ; 0.1IRG ~ 0.9IRG tfd ; 50% on signal ~ 0VRG trd ; 50% off signal ~ 0VRG Integration area for Eoff ; 5%VD ~ until 100µs IG tw VRG diGQ/dt IGQ VRG Control signal Fig. 1 Turn-on and Turn-off waveform L ANL L (load) Rs FWDi Rc VD DUT Cs VD DUT CDi Lc Cc Fig. 3 Turn-off test circuit Fig. 2 Turn-on test circuit (With clamp circuit) QRR = (trr×IRM)/2 [ Integration area for Erec ; 0IT ~ until 100µs ] ANL Rs t(Erec) = 100µs IT L (load) trr DUT Cs 0 VD DUT di/dt (0 ~ 50%IRM) 50%IRM 50%IT 90%IRM Rs Cs VR VRM Fig. 4 Reverse recovery waveform Fig. 5 Turn-off and Reverse recovery test circuit Mar. 2004 MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU08BA-130 HIGH POWER INVERTER USE PRESS PACK TYPE Note 1. Status signal 1. Status signal from LED (1) Status signal LED 1 (Red) OFF ON LED 2 (Yellow) ON OFF Status G-K Power Supply Normal Fault Fault Fault Normal Normal G-K short G-K short 20±1V Voltage down 20±1V Voltage down Status of GCT On state Off state (2) Fault signal G-K LED (LED 3) (Green) On Off Off Off PS LED (LED 4) (Green) On Off On Off 2. Status signal from Transmitter (L : Light NL : No light) (1) Normal operation (2) Fault signal (O/V or U/V) L Control signal (Control board) L Control signal (Control board) NL NL L Control signal (GDU input) L Control signal (GDU input) NL NL L L L Status signal (GDU output) NL NL Status signal (GDU output) (3) Fault signal (G-K short) Normal Fault (4) Fault signal (fiber optic) L Control signal (Control board) NL Control signal (GDU input) NL L Control signal (Control board) NL L Control signal (GDU input) NL (Always No light) L NL Status signal (GDU output) Normal Status signal (GDU output) L (Always light) Fault Mar. 2004 MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU08BA-130 HIGH POWER INVERTER USE PRESS PACK TYPE PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC 103 7 5 3 2 Tj=25°C 7 5 3 2 101 TURN OFF SWITCHING ENERGY Eoff (J/P) Tj=125°C 102 0 1 2 3 4 5 6 7 8 9 10 1.0 0.8 0.6 0.4 0.2 0.0 0 200 400 600 800 Erec VS IT (Max) VD=3000V, VDM=VD+2.34×IT Tj=125°C, Cs=0.1µF Rs=10Ω 4 3 2 1 0 di/dt=1000A/µs Cs=0.1µF, Rs=10Ω Eoff VS IT (Max) 5 0 CONDITION 1.2 VD=3000V, Tj=125°C TURN ON CURRENT IT (A) CONDITION 6 1.4 ON-STATE VOLTAGE VTM (V) 8 7 TURN ON SWITCHING ENERGY Eon (J/P) 7 5 3 2 200 400 600 800 1000 TURN OFF CURRENT IT (A) REVERSE RECOVERY ENERGY Erec (J/P) ON-STATE CURRENT IT (A) 104 Eon VS IT (Max) 10 1000 CONDITION 9 VR=3000V, Tj=125°C di/dt=1000A/µs Cs=0.1µF, Rs=10Ω 8 7 6 5 4 3 2 1 0 0 200 400 600 800 1000 ON-STATE CURRENT IT (A) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 0.035 0.03 Zth (K/W) 0.025 0.02 0.015 0.01 0.005 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 TIME (S) Mar. 2004