POWEREX FGC3500AX

MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS
ARY
FGC3500AX-120DS
MIN
I
L
E
PR
.
ation
nge.
pecific to cha
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a
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o
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is is nic limits a
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Notice parame
Som
HIGH POWER INVERTER USE
PRESS PACK TYPE
OUTLINE DRAWING
Dimensions in mm
+0.2
16-φ4.5 0
34
±0
.4
M3✕0.5 2.5DEPTH
0
(4 +
– 0.3 )
● ITQRM Repetitive controllable on-state current .......... 3500A
● IT(AV) Average on-state current .................... 1200A
● VDRM Repetitive peak off-state voltage .................. 6000V
● Anode short type
22.5° ± 0.5°
φ147 ± 0.4
φ85 ± 0.2
φ85 ± 0.2
φ120MAX
(φ127)
0.4MIN
(6.8)
26 ± 0.5
φ1
0.4MIN
FGC3500AX-120DS
φ3.5 ± 0.2 2.2 ± 0.2DEPTH
APPLICATION
Inverters, DC choppers, Induction heaters, DC to DC converters.
MAXIMUM RATINGS
Symbol
VRRM
VRSM
VR(DC)
VDRM
VDSM
VD(DC)
VLTDS
Voltage class
21
21
21
6000
6000
4800
3600
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage+
Non-repetitive peak off-state voltage+
DC off-state voltage+
Long term DC stability voltage+
Unit
V
V
V
V
V
V
V
+ : VGK = –2V
Symbol
Parameter
ITQRM
Repetitive controllable on-state current
IT(RMS)
IT(AV)
ITSM
RMS on-state current
Average on-state current
Surge on-state current
I2t
Current-squared, time integration
diT/dt
Critical rate of rise of on-state current
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg
—
—
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak reverse gate current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
VDM = 6000V, VD = 3600V, LC = 0.3µH, VRG = 20V
diGQ/dt = 6000A/µs, Tj = 25/125°C
(see Fig. 1, 3)
Applied for all conduction angles
f = 60Hz, sinewave θ = 180°, Tf = 70°C
One half cycle at 60Hz, Tj = 125°C
VD = 3600V, IT = 3500A, IGM= 200A, Tj= 125°C
(see Fig. 1, 2)
diG/dt = 100A/µs
(Recommended value 40kN)
Typical value
Ratings
Unit
3500
A
1800
1200
25
2.6 × 106
A
A
kA
A 2s
1000
A/µs
10
21
1000
3500
10
120
200
6300
–20 ~ +125
–20 ~ +150
V
V
A
A
kW
kW
W
W
°C
°C
32 ~ 48
1500
kN
g
Sep. 2000
MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS
ARY
MIN
I
L
E
PR
FGC3500AX-120DS
.
ation
nge.
pecific to cha
final s subject
a
t
o
re
is is nic limits a
e: Th
tr
Notice parame
Som
HIGH POWER INVERTER USE
PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test conditions
VTM
IRRM
IDRM
IGRM
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
dv/dt
Critical rate of rise of off-state voltage
tgt
td
Eon
Turn-on time
Delay time
IT = 4000A, Tj = 125°C
VRM = 21V, Tj = 125°C
VDM = 6000V, VGK = –2V, Tj = 125°C
VRG = 21V, Tj = 125°C
VD = 3600V, VGK = –2V, Tj = 125°C
(Expo. wave)
(see Fig. 4)
VD = 3600V, IT = 3500A, di/dt = 1000A/µs
IGM = 200A, diG/dt = 100A/µs, Tj = 125°C
(see Fig. 1, 2)
Turn-on switching energy
ts
Storage time
Eoff
Turn-off switching energy
IGT
VGT
Rth(j-f)
Gate trigger current
Gate trigger voltage
Thermal resistance
VDM = 6000V, VD = 3600V, IT = 3500A
diGQ/dt = 6000A/µs, CC = 6µF, LC = 0.3µH
(see Fig. 1, 3)
VRG = 20V, Tj = 125°C
DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C
Junction to fin
Min
—
—
—
—
Limits
Typ
—
—
—
—
Max
4.0
100
150
100
3000
—
—
V/µs
—
—
—
—
—
1.2
3.0
1.0
—
µs
µs
J/P
—
—
3.0
µs
—
19
—
J/P
—
—
—
—
—
—
2.5
1.5
0.011
A
V
°C/W
Unit
V
mA
mA
mA
Fig. 1 Turn-on and Turn-off waveform
IT
VD
VD
td
tgt
diG/dt
td ; 0VG ~ 0.9VD
tgt ; 0VG ~ 0.1VD
diG/dt ; 0.1IGM ~ 0.9IGM
ts ; 0VG ~ 0.9IT
diGQ/dt ; 0.1IGQ ~ 0.9IGQ
ts
IGM
IG
diGQ/dt
VRG
VRG
IGQ
Fig. 2 Turn-on test circuit
Fig. 3 Turn-off test circuit
Fig. 4 dv/dt test waveform
(With clamp circuit)
L
dV/dt 0.632VD/τ
L(line)
VD
GCT
0.632VD
FWDi
L(load)
VD
Rc
VD
CDi
GCT
τ
t
Lc
Cc
Sep. 2000
MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS
ARY
MIN
I
L
E
PR
FGC3500AX-120DS
.
ation
nge.
pecific to cha
final s subject
a
t
o
re
is is nic limits a
e: Th
tr
Notice parame
Som
HIGH POWER INVERTER USE
PRESS PACK TYPE
PERFORMANCE CURVES
TURN ON SWITCHING ENERGY
(TYPICAL)
7
5
3
2
103
7
5
3
2
Tj=25°C
102
7
5
3
2
10
TURN OFF SWITCHING ENERGY Eoff (J/P)
Tj=125°C
0
1
2
3
4
5
6
7
Condition
1.8 VD=3600V, di/dt=1000A/µs
1.6 IGM=200A, diG/dt=100A/µs
Tj=125°C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
500 1000 1500 2000 2500 3000 3500 4000
TURN ON CURRENT (A)
TURN OFF SWITCHING ENERGY
(TYPICAL)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
25
0.014
Condition
VDM=3600V+0.44∗IT
20 VD=3600V, CC=6µF
LC=0.3µF, Tj=125°C
diGQ/dt=6000A/µs
15
10
5
0
2.0
ON-STATE VOLTAGE (V)
0
500 1000 1500 2000 2500 3000 3500 4000
TURN OFF CURRENT (A)
THERMAL IMPEDANCE Zth (°C/W)
ON-STATE CURRENT (A)
104
TURN ON SWITCHING ENERGY Eon (J/P)
MAXIMUM ON-STATE CHARACTERISTIC
0.012
0.01
0.008
0.006
0.004
0.002
0
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
TIME (S)
Sep. 2000