MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU04AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE GCU04AA-130 ● Symmetrical GCT unit ● GCT and gate driver are connected ● ITQRM: Repetitive controllable on-state current ........ 400A ● IT(AV): Average on-state current ..................... 180A ● VDRM: Repetitive peak off-state voltage ....... 6500V ● VRRM: Repetitive peak reverse voltage ........ 6500V ● Tj: Operation junction temperature ......... 125°C APPLICATION Current source inverters, DC choppers, Induction heaters, DC to DC converter OUTLINE DRAWING Dimensions in mm 208 104 170 6×M4 φ3 (20) 8± 68 (R39.5) 20 9MAX φ3.5±0.2 2.2±0.2 DEPTH OE1 5 20V POWER SUPPLY INPUT (MSTB2.5/2-G-5.08AU) 37 FIBER OPTIC INPUT (HFBR-2521) FAULT SIGNAL OUTPUT (HFBR-1521) 26±0.5 20MAX 6±0.5 φ38±0.2 6±0.5 φ3.5±0.2 2.2±0.2 DEPTH 37 A 20 6±0.5 3.6 10.1±0.9 160 120 6±0.5 CAPTIV SCREW (DEPTH OF THE SCREW INTO THE HEATSINK : 6 ~ 8mm) 14.3±1.3 LED4 : POWER SUPPLY OK (GREEN) LED3 : G-K OK (GREEN) LED2 : GATE ON (YELLOW) LED1 : GATE OFF (RED) 1.6 13.7 GATE TEST POINT CATHODE TEST POINT 10MIN OE2 LED4 LED3 LED2 LED1 TPG TPK 220 190 170 80±0.5 77 0.2 A PART MAGNIFICATION Mar. 2009 MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU04AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE GCT PART MAXIMUM RATINGS Symbol VRRM VRSM VDRM VDSM V(LTDS) Symbol IT(RMS) IT(AV) ITQRM ITSM I2t diT/dt diR/dt PFGM PRGM PFG(AV) PRG(AV) VFGM VRGM IFGM IRGM Conditions Parameter — Repetitive peak reverse voltage — Non-repetitive peak reverse voltage Repetitive peak off-state voltage Gate driver energized Gate driver energized Non-repetitive peak off-state voltage Long term DC stability voltage Gate driver energized, λ = 100 Fit Parameter RMS on-state current Average on-state current Repetitive controllable on-state current Surge on-state current Current-squared, time integration Critical rate of rise of on-state current Critical rate of rise of reverse recovery current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak reverse gate current Conditions Applied for all condition angles f = 60Hz, sinewave θ = 180°, Tf = 55°C VDM = 4000V, VD = 3000V, LC = 0.3µH Tj = 25/125°C (See Fig. 1, 3) One half cycle at 60Hz, Tj = 125°C start VD = 3000V, IT = 400A, CS = 0.06µF, RS = 15Ω Tj = 25/125°C, f = 60Hz (See Fig. 1, 2) IT = 400A, VR = 3000V, Tj = 25/125°C CS = 0.06µF, RS = 15Ω (See Fig. 4, 5) Voltage class 6500 6500 6500 6500 3600 Unit V V V V V Ratings Unit 280 180 A A 400 A 2.8 3.3 × 104 kA A 2s 1000 A/µs 1000 A/µs 3 9 50 60 10 21 250 400 kW kW W W V V A A ELECTRICAL CHARACTERISTICS Parameter Conditions On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Turn-on delay time IT = 400A, Tj = 125°C VRM = 6500V, Tj = 125°C VDM = 6500V, Tj = 125°C, Gata driver energized VRG = 21V, Tj = 125°C VD = 3000V, Tj = 125°C Gate driver energized (Expo. wave) Erec Turn-on switching energy Storage time Turn-off switching energy Reverse recovery charge Reverse recovery energy (See Fig. 1, 2) IT = 400A, VDM = 4000V, VD = 3000V CS = 0.06µF, RS = 15Ω, Tj = 125°C (See Fig. 1, 5) VR = 3000V, IT = 400A, di/dt = 1000A/µs CS = 0.06µF, RS = 15Ω, Tj = 125°C (See Fig. 4, 5) IGT VGT Gate trigger current Gate trigger voltage VD = 24V, RL = 0.1Ω, Tj = 25°C DC method Symbol VTM IRRM IDRM IGRM dv/dt tgt td Eon ts Eoff QRR IT = 400A, VD = 3000V, di/dt = 1000A/µs CS = 0.06µF, RS = 15Ω, Tj = 125°C Min — — — — Limits Typ — — — — Max 7.5 150 100 50 3000 — — V/µs — — — — — — — — — — — — 5 1 µs µs 0.7 3 2.9 1600 J/P µs J/P µC — — — — — — Unit V mA mA mA 4.1 J/P 0.35 A 1.5 V Mar. 2009 2 MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU04AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE GATE DRIVER PART Parameter Symbol VGIN PGIN tfd trd Power supply voltage Gate power consumption Delay time of on gate current Delay time of off gate current — Control signal — Power supply connector — Status signal Conditions DC power supply IT = 230Arms, f = 780Hz, duty = 0.33 Ta = 25°C Ta = 25°C Optical fiber data link Transmitter : HFBR-1521 : Agilent Receiver : HFBR-2521 : Agilent Phoenix contact Type name : MSTB2.5/2-G-5.08AU — (Note 1) Min 19 — — Limits Typ 20 — — — Max 21 20 3.0 3.0 — — — — — — — — — — — — Min 7.3 — — — Limits Typ 8.6 700 38 26 Max 11 — — — Min –10 –10 –10 — Limits Typ — — — — Max 125 60 60 0.04 Unit V W µs µs MECHANICAL DATA Parameter Symbol FM — — — Conditions — — Mounting force Weight Pole piece diameter (GTC device) ±0.2mm Housing thickness (GTC device) ±0.5mm Unit kN g mm mm THERMAL DATA Symbol Tj Tstg Ta Rt(j-f) Parameter Junction operating temperature Storage temperature Ambient operation temperature Thermal resistance Conditions — — Recommend : ≤ 40°C Junction to Fin Unit °C °C °C K/W Mar. 2009 3 MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU04AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE IT VD VD td tgt t(Eoff) = 100µs ts trd tfd IGM diG/dt td ; 0VRG ~ 0.9VD tgt ; 0VRG ~ 0.1VD ts ; 0VRG ~ 0.9IT diG/dt ; 0.1IGM ~ 0.9IGM tw ; 0VRG ~ 0.9IGM diGQ/dt ; 0.1IRG ~ 0.9IRG tfd ; 50% on signal ~ 0VRG trd ; 50% off signal ~ 0VRG Integration area for Eoff ; 5%VD ~ until 100µs IG tw VRG diGQ/dt VRG IGQ Control signal Fig. 1 Turn-on and Turn-off waveform L ANL L (load) Rs FWDi Rc VD VD DUT Cs DUT CDi Lc Cc Fig. 3 Turn-off test circuit Fig. 2 Turn-on test circuit (With clamp circuit) QRR = (trr×IRM)/2 [ Integration area for Erec ; 0IT ~ until 100µs ] ANL Rs t(Erec) = 100µs IT L (load) trr DUT Cs 0 VD DUT di/dt (0 ~ 50%IRM) 50%IRM 50%IT 90%IRM Rs Cs VR VRM Fig. 5 Turn-off and Reverse recovery test circuit Fig. 4 Reverse recovery waveform Mar. 2009 4 MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU04AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE Note 1. Status signal 1. Status signal from LED (1) Status signal LED 1 (Red) OFF ON LED 2 (Yellow) ON OFF Status G-K Power Supply Normal Fault Fault Fault Normal Normal G-K short G-K short 20±1V Voltage down 20±1V Voltage down Status of GCT On state Off state (2) Fault signal G-K LED (LED 3) (Green) On Off Off Off PS LED (LED 4) (Green) On Off On Off 2. Status signal from Transmitter (L : Light NL : No light) (1) Normal operation (2) Fault signal (O/V or U/V) L Control signal (Control board) L Control signal (Control board) NL NL L Control signal (GDU input) L Control signal (GDU input) NL NL L L L Status signal (GDU output) NL NL Status signal (GDU output) (3) Fault signal (G-K short) Normal Fault (4) Fault signal (fiber optic) L Control signal (Control board) NL Control signal (GDU input) NL L Control signal (Control board) NL L Control signal (GDU input) NL (Always No light) L NL Status signal (GDU output) Normal Status signal (GDU output) L (Always light) Fault Mar. 2009 5 MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU04AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC TURN ON SWITCHING ENERGY Eon (J/P) Eon VS IT (Max) 7 5 3 2 102 7 Tj=25°C 3 2 101 TURN OFF SWITCHING ENERGY Eoff (J/P) Tj=125°C 5 0 1 2 3 4 5 6 7 8 9 10 VD=3000V, VDM=VD+2.5×IT Tj=125°C, Cs=0.06µF Rs=15Ω 2 1.5 1 0.5 0 0.6 0.4 0.2 0.0 0 100 200 300 400 Erec VS IT (Max) 2.5 0 VD=3000V, Tj=125°C di/dt=1000A/µs Cs=0.06µF, Rs=15Ω 0.8 Eoff VS IT (Max) CONDITION 3 CONDITION TURN ON CURRENT IT (A) 4 3.5 1.0 ON-STATE VOLTAGE VTM (V) REVERSE RECOVERY ENERGY Erec (J/P) ON-STATE CURRENT IT (A) 103 100 200 300 400 500 TURN OFF CURRENT IT (A) 500 6 CONDITION VR=3000V, Tj=125°C di/dt=1000A/µs Cs=0.06µF, Rs=15Ω 5 4 3 2 1 0 0 100 200 300 400 500 ON-STATE CURRENT IT (A) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 0.060 0.050 Zth (K/W) 0.040 0.030 0.020 0.010 0.000 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 TIME (S) Mar. 2009 6