GTM GMBTA64

G M B TA 6 4
1/2
PNP SILICON TRANSISTOR
Description
The GMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA.
Features
High D.C. Current Gain
For Complementary with NPN Type GMBTA14
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0
10
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
-30
V
Collector to Emitter Voltage
VCEO
-30
V
Emitter to Base Voltage
VEBO
-10
V
Collector Current
IC
-500
mA
Total Power Dissipation
PD
225
mW
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
BVCBO
-30
-
-
V
IC=-100uA , IE=0
BVCES
-30
-
-
V
IC=-100uA, IB=0
BVEBO
-10
-
-
V
IE=-10uA, IC=0
-
-
-100
nA
VCB=-30V, IE=0
ICBO
Test Conditions
IEBO
-
-
-100
nA
VCE=-10V
VCE(sat)
-
-
-1.5
V
IC=-100mA, IB=-0.1mA
V
VBE(on)
-
-
-2
HFE1
10K
-
-
HFE2
20K
fT
125
-
-
VCE=-5V, IC=-100mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-100mA
MHz
VCE=-5V, IC=-100mA, f=100MHz
*Pulse Test :Pulse width 380us,Duty Cycly 2%
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Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4
FAX : 86-21-38950165