G M B TA 6 4 1/2 PNP SILICON TRANSISTOR Description The GMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA. Features High D.C. Current Gain For Complementary with NPN Type GMBTA14 Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO -30 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VEBO -10 V Collector Current IC -500 mA Total Power Dissipation PD 225 mW Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO -30 - - V IC=-100uA , IE=0 BVCES -30 - - V IC=-100uA, IB=0 BVEBO -10 - - V IE=-10uA, IC=0 - - -100 nA VCB=-30V, IE=0 ICBO Test Conditions IEBO - - -100 nA VCE=-10V VCE(sat) - - -1.5 V IC=-100mA, IB=-0.1mA V VBE(on) - - -2 HFE1 10K - - HFE2 20K fT 125 - - VCE=-5V, IC=-100mA VCE=-5V, IC=-10mA VCE=-5V, IC=-100mA MHz VCE=-5V, IC=-100mA, f=100MHz *Pulse Test :Pulse width 380us,Duty Cycly 2% 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165