GTM GLA27

1/2
G L A2 7
NPN TRANSISTOR
Description
The GLA27 is designed for darlington amplifier high current gain collector current to 500mA.
Package Dimensions
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
10
0
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13 TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Symbol
Ratings
Tj
+150
Tstg
-55 ~ +150
Unit
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCES
60
V
Emitter to Base Voltage
VEBO
10
V
Collector Current
IC
500
mA
Total Power Dissipation
PD
2
W
Characteristics
Symbol
BVCBO
at Ta = 25
Min.
Typ.
Max.
Unit
60
-
-
V
Test Conditions
IC=100uA , IE=0
BVCES
60
-
-
V
IC=100uA, VBE=0
BVEBO
10
-
-
V
IE=10uA , IC=0
ICBO
-
-
100
nA
VCB=50V ,IE=0
IEBO
-
-
100
nA
VEB=10V, IC=0
ICES
-
-
500
nA
VCE=50V
VCE(sat)
-
-
1.5
V
IC=100mA, IB=0.1mA
VBE(sat)
-
-
2.0
V
IC=100mA, VCE=5V
hFE1
10K
-
-
VCE=5V, IC=10mA
hFE2
10K
-
-
VCE=5V, IC=100mA
2/2
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 FAX : 86-21-38950165