GTM GMBTA05

G M B TA 0 5
1/2
NPN SILICON TRANSISTOR
Description
The GMBTA05 is Amplifier Transistor.
Package Dimensions
REF
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
10
0
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Characteristics
Symbol
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55~+150
60
60
4
500
225
Unit
V
V
V
mA
mW
at Ta = 25
Min.
Typ.
Max.
Unit
BVCBO
60
-
-
V
IC=100uA
Test Conditions
BVCEO
60
-
-
V
IC=1mA
BVEBO
4
-
-
V
IE=100uA
ICBO
-
-
100
nA
VCB=60V
ICEO
-
-
100
nA
VCE=60V
*VCE(sat)
-
-
250
mV
IC=100mA, IB=10mA
VBE(sat)
-
-
1.2
V
IC=100mA, VCE=1V
*hFE1
50
-
*hFE2
50
-
-
fT
100
-
-
VCE=1V, IC=10mA
VCE=1V, IC=100mA
MHz
VCE=2V, IC=10mA, f=100MHz
*Pulse Test:Pulse width 380us,Duty Cycle 2%
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Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 FAX : 86-21-38950165