GTM GM5401

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GM5401
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GM5401 is designer for general purpose applications requiring high breakdown voltages.
Package Dimensions
SOT-89
GM
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
10
0
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13 TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Symbol
Ratings
Tj
+150
Unit
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
-160
V
Collector to Emitter Voltage
VCEO
-150
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
-600
mA
Total Power Dissipation
PD
1
W
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
BVCBO
-160
-
-
V
IC=-100uA, IE =0
BVCEO
-150
-
-
V
IC=-1mA, IB=0
BVEBO
-5
-
-
V
IE=-10uA, IC=0
ICBO
-
-
-50
nA
VCB=-120V , IE=0
IEBO
-
-
-50
nA
VEB=-5V , IC=0
VCE(sat)1
-
-
-200
mV
IC=-10mA, IB=-1mA
VCE(sat)2
-
-
-500
mV
IC=-50mA, IB=-5mA
VBE(sat)1
-
-
-1
V
IC=-10mA, IB=-1mA
VBE(sat)2
-
-
-1
V
hFE1
50
-
-
hFE2
60
-
240
VCE=-5V, IC=-10mA
hFE3
50
-
-
VCE=-5V, IC=-50mA
fT
100
-
-
MHz
-
-
6
pF
Cob
Test Conditions
IC=-50mA, IB=-5mA
VCE=-5V, IC=-1mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 FAX : 86-21-38950165
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