1/2 GM5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The GM5401 is designer for general purpose applications requiring high breakdown voltages. Package Dimensions SOT-89 GM REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Symbol Ratings Tj +150 Unit Tstg -55 ~ +150 Collector to Base Voltage VCBO -160 V Collector to Emitter Voltage VCEO -150 V Emitter to Base Voltage VEBO -5 V Collector Current IC -600 mA Total Power Dissipation PD 1 W Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO -160 - - V IC=-100uA, IE =0 BVCEO -150 - - V IC=-1mA, IB=0 BVEBO -5 - - V IE=-10uA, IC=0 ICBO - - -50 nA VCB=-120V , IE=0 IEBO - - -50 nA VEB=-5V , IC=0 VCE(sat)1 - - -200 mV IC=-10mA, IB=-1mA VCE(sat)2 - - -500 mV IC=-50mA, IB=-5mA VBE(sat)1 - - -1 V IC=-10mA, IB=-1mA VBE(sat)2 - - -1 V hFE1 50 - - hFE2 60 - 240 VCE=-5V, IC=-10mA hFE3 50 - - VCE=-5V, IC=-50mA fT 100 - - MHz - - 6 pF Cob Test Conditions IC=-50mA, IB=-5mA VCE=-5V, IC=-1mA VCE=-10V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165 2/2