GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101B High Power Switching Applications Unit: mm • Enhancement mode type • High speed: tf = 0.40 µs (max) (I C = 80 A) • Low saturation voltage: V CE (sat) = 2.9 V (max) (I C = 80 A) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V @Tc = 100°C Continuous collector current IC @Tc = 25°C Pulsed collector current (Note 1) ICP @Tc = 100°C Collector power dissipation 33 A 80 160 A 80 @Tc = 25°C PC @Ta = 25°C 200 W JEDEC ? °C JEITA ? TOSHIBA 3.5 Junction temperature Tj 150 Storage temperature Tstg −55~150 °C 0.8 N·m Screw torque 2-21F2C Weight: 9.75 g (typ.) Note 1: The Maximum rating of ICP=160A is limited by pulse (1ms). Refer to the graph of safe operating area for the detail. Thermal Characteristics Characteristics Thermal resistance , junction to case (Tc = 25°C) Thermal resistance , junction to air (Ta = 25°C) Symbol Rating Unit Rth (j-c) 0.625 °C/W Rth (j-a) 35.7 °C/W MARKING Part No. (or abbreviation code) TOSHIBA 80J101B Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-06-05 GT80J101B Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±25 V, VCE = 0 ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 1.0 mA V Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance VGE (OFF) VCE = 5 V, IC = 80 mA 3.0 6.0 VCE (sat) (1) IC = 10 A, VGE = 15 V 2.0 VCE (sat) (2) IC = 80 A, VGE = 15 V 2.4 2.9 VCE = 10 V, VGE = 0, f = 1 MHz 5500 Resistive load 0.3 0.5 0.25 0.40 0.7 Cies Rise time tr VCC = 300 V, I C = 80 A Turn-on time ton VGG = ±15 V, RG = 33Ω Switching time Fall time tf V pF µs (Note 2) Turn-off time toff Note 2: Switching time measurement circuit and input/output waveforms. VGE 90% 10% 0 RG RL IC 0 90% VCC 0 90% VCE 10% 10% td (off) tf t off tr t on Caution on handling This device is MOS gate type. Therefore, please care about ESD when use. 2 2006-06-05 GT80J101B IC − VCE VCE − VGE 100 10 Collector current IC (A) Common emitter Collector-emitter voltage VCE (V) 10 15 20 Tc = 25 °C 8 80 60 6 40 5 20 Common emitter Tc = −40°C 8 10 20 6 I C = 80 A 40 4 60 2 VGE = 4 V 0 0 2 4 6 8 0 0 10 8 4 Collector-emitter voltage VCE (V) VCE − VGE Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Tc = 25°C 8 10 I C = 80 A 20 40 4 60 2 4 8 12 16 20 Tc = 125°C 8 10 6 I C = 80 A 20 40 4 60 2 0 0 24 4 8 12 16 20 24 Gate-emitter voltage VGE (V) IC − VGE VCE (sat) − Tc 100 4 Collector-emitter saturation voltage VCE (sat) (V) Common emitter VCE = 5 V Collector current IC (A) 24 Common emitter Gate-emitter voltage VGE (V) 80 60 40 Tc = 125°C 20 25 0 0 20 10 Common emitter 0 0 16 VCE − VGE 10 6 12 Gate-emitter voltage VGE (V) 2 4 6 −40 8 10 Common emitter VGE = 15 V 3 80 2 30 Gate-emitter voltage VGE (V) I C = 10 A 1 0 −40 12 50 0 40 80 120 160 Case temperature Tc (°C) 3 2006-06-05 GT80J101B Switching time – RG 10 Common emitter Common emitter R L = 1.88 Ω 16 5 VCC = 300 V I C = 80 A 3 VGG = ±15 V Tc = 25°C Tc = 25°C Switching time (µs) Collector-emitter voltage VCE (V) (×10 V) Gate-emitter voltage VGE (V) VCE, VGE − QG 20 12 VCE = 150 V 8 100 50 4 t off t on 1 tr 0.5 tf 0.3 0 0 160 80 240 Gate charge QG 320 0.1 3 (nC) 5 10 30 50 100 300 500 Gate resistance RG ( Ω) C − VCE Switching time – IC 5 30000 Common emitter VCC = 300 V R G = 33 Ω 10000 VGG = ±15 V Tc = 25°C Capacitance C (pF) Switching time (µs) 3 1 0.5 t off 0.3 t on C ies 3000 1000 500 300 tf 0.1 0 5000 C oes Common emitter VGE = 0 V f = 1 MHz tr 10 20 30 40 50 60 70 100 80 Collector current IC (A) 50 1 Tc = 25°C 3 C res 5 10 30 50 100 300 500 Collector-emitter voltage VCE (V) Safe Operating Area * Single non-repetitive pulse Tc = 25°C Curves must be derated linearly with increase in Rth (t) − tw 200 1 µs * 10 µs * 100 µs * I C max 100 (Pulsed) 30 I C max (Continuous ) DC Operation 10 3 10 ms * 1 ms * 1 1 3 10 30 100 300 2 10 Transient thermal impedance Rth (t) (°C/W) Collector current IC (A) temperature. 0 10 1 10− 2 10− 3 10− 5 10− 1000 Collector-emitter voltage VCE (V) Tc = 25 °C 1 10 4 10− 3 10− 2 10− 1 10− Pulse width tw 4 0 10 1 10 2 10 (s) 2006-06-05 GT80J101B Reverse Bias SOA 300 Collector current IC (A) 100 30 10 3 1 0.3 0.1 0 Tj < = 125°C VGE = +15 V −0 R G = 33 Ω 100 200 300 400 500 600 700 Collector-emitter voltage VCE (V) 5 2006-06-05 GT80J101B RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2006-06-05