2SC5029 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC5029 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A, IB = 0.05 A) • High collector power dissipation: PC = 1.3 W • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1892 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 3 A Base current IB 0.2 A Collector power dissipation PC 1.3 W Junction temperature Tj 150 Tstg −55 to 150 Collector current Storage temperature range JEDEC ― °C JEITA ― °C TOSHIBA 2-8M1A Weight: 0.55 g (typ.) 1 2004-07-07 2SC5029 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ― ― 1.0 µA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 1.0 µA V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V VCE = 2 V, IC = 0.5 A 70 ― 240 hFE (2) VCE = 2 V, IC = 1.5 A 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 0.05 A ― ― 0.5 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 0.05 A ― ― 1.2 V VCE = 2 V, IC = 0.5 A ― 100 ― MHz VCB = 10 V, IC = 0, f = 1 MHz ― 30 ― pF ― 0.1 ― ― 1.0 ― ― 0.1 ― hFE (1) DC current gain (Note) Transition frequency fT Collector output capacitance Cob ton 20 µs Input Switching time Storage time IB2 IB1 Turn-on time tstg IB1 Output 30 Ω Collector-emitter breakdown voltage IB2 µs 30 V Fall time tf IB1 = −IB2 = 0.05 A, duty cycle ≤ 1% Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking C5029 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC5029 IC – VCE 25 20 Common emitter Ta = 25°C 18 Common emitter 15 12 1.6 10 8 1.2 6 0.8 4 300 Ta = 100°C 100 25 −55 50 30 IB = 2 mA 0.4 0 0 VCE = 2 V 500 DC current gain IC (A) 2.0 Collector current hFE – IC 1000 hFE 2.4 0 2 4 6 8 10 Collector-emitter voltage VCE 12 10 0.01 14 0.03 0.3 1 Collector current IC (A) (V) VCE (sat) – IC VBE (sat) – IC 1 5 Common emitter Base-emitter saturation voltage VBE (sat) (V) IC/IB = 20 0.5 0.3 0.1 Ta = 100°C 0.05 25 −55 Common emitter 3 IC/IB = 20 Ta = −55°C 1 0.5 100 25 0.3 ) Collector-emitter saturation voltage VCE (sat) (V) 0.1 0.02 0.01 0.03 0.1 0.3 0.1 0.01 1 Collector current IC (A) 0.03 0.1 0.3 Collector current IC 1 (A) IC – VBE 2.0 Common emitter Collector current IC (A) VCE = 2 V 1.5 1.0 0.5 0 0 Ta = 100°C 0.4 25 0.8 −55 1.2 Base-emitter voltage 1.6 VBE 2.0 (V) 3 2004-07-07 2SC5029 rth – tw 1000 500 Curves should be applied in thermal limited area. (single nonrepetitive pulse) Ta = 25°C (°C /W) 50 Transient thermal resistance 100 rth 300 30 10 5 3 IB2 0.3 0.1 0.001 0.01 0.1 1 10 Pulse width tw 100 1000 (s) Safe Operating Area PC – Ta IC max (pulsed)* Collector current IC (A) 5 3 10 ms* IC max (continuous) 1 ms* 100 ms* 1 0.5 DC operation Ta = 25°C PC (W) 10 1.4 Collector power dissipation 1.6 1.0 1.2 0.8 0.6 0.4 0.2 0.1 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated 0.03 linearly with increase in temperature. 0.02 0.3 1 3 0 0 0.05 Collector-emitter voltage 30 VCE 50 75 100 Ambient temperature VCEO max 10 25 125 Ta 150 175 (°C) 100 (V) 4 2004-07-07 2SC5029 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-07