2SC5176 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5176 High-Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 µs (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V VEBO 7 V IC 5 ICP 8 Emitter-base voltage DC Collector current Pulse A Base current IB 1 A Collector power dissipation PC 1.8 W JEDEC ― Junction temperature Tj 150 °C JEITA ― Tstg −55 to 150 °C TOSHIBA Storage temperature range 2-10T1A Weight: 1.5 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ― ― 1 µA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 1 µA V (BR) CEO IC = 10 mA, IB = 0 80 ― ― V hFE (1) VCE = 1 V, IC = 1 A 70 ― 240 hFE (2) VCE = 1 V, IC = 3 A 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = 3 A, IB = 0.15 A ― 0.2 0.4 V Base-emitter saturation voltage VBE (sat) IC = 3 A, IB = 0.15 A ― 0.9 1.2 V fT VCE = 4 V, IC = 1 A ― 120 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 80 ― pF ― 0.2 ― ― 1.0 ― ― 0.1 ― DC current gain Transition frequency Collector output capacitance Turn-on time Cob ton Storage time tstg Input IB2 Switching time IB1 20 µs IB1 IB2 Output 10 Ω Collector-emitter breakdown voltage µs VCC ≈ 30 V Fall time tf IB1 = −IB2 = 0.15 A, duty cycle ≤ 1% 1 2004-07-26 2SC5176 Marking C5176 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-26 2SC5176 IC – VCE 80 70 Common emitter Ta = 25°C 60 Collector current Common emitter VCE IC (A) 50 (V) 100 90 40 4 Collector-emitter voltage 5 VCE – IC 0.8 30 3 20 2 IB = 10 mA 1 0 0 2 4 6 8 12 10 Collector-emitter voltage VCE IB = 20 mA 0.2 140 100 1 2 4 5 VCE – IC 0.8 60 80 VCE 40 Collector-emitter voltage 0.6 100 0.4 IB = 20 mA (V) IB = 20 mA (V) VCE Collector-emitter voltage 3 Collector current IC (A) VCE – IC 140 0.2 Common emitter 40 60 1 2 3 4 140 0.2 Common emitter Ta = −55°C 1 Collector current IC (A) 2 hFE – IC Collector-emitter saturation voltage VCE (sat) (V) hFE Ta = 100°C 25 50 −55 30 10 Common emitter 5 VCE = 1 V 0.01 0.03 0.1 0.3 4 5 VCE (sat) – IC 500 100 3 Collector current IC (A) 1000 300 100 0.4 0 0 5 80 0.6 Ta = 25°C 0 0 DC current gain 80 0.4 (V) 0.8 2 0.003 60 0.6 0 0 14 40 Ta = 100°C 1 3 5 3 IC/IB = 20 1 0.5 0.3 0.1 0.05 10 Ta = −55°C 100 0.03 0.01 0.003 Collector current IC (A) Common emitter 25 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) 3 2004-07-26 2SC5176 VBE (sat) – IC IC – VBE 5 Common emitter Common emitter VCE = 1 V IC/IB = 20 IC (A) 10 5 3 Ta = −55°C 1 Collector current Base-emitter saturation voltage VBE (sat) (V) 30 0.5 0.3 0.1 0.003 100 25 0.01 0.03 0.1 0.3 1 3 10 4 3 2 Ta = 100°C 25 −55 1 Collector current IC (A) 0 0 0.2 0.4 0.6 0.8 Base-emitter voltage 10 10 5 3 0.1 0.001 IC (A) 5 1 0.5 0.3 Curves should be applied in thermal limited area. (single nonrepetitive pulse) No heat sink Ta = 25°C 0.01 0.1 1 Pulse width 10 tw VBE 1.2 1.4 (V) Safe Operating Area 100 50 30 100 Collector current Transient thermal resistance rth (°C/W) rth – tw 1.0 1000 (s) IC max (pulsed)* IC max (continuous) 3 1 0.5 10 µs* 100 µs* 1 ms* DC operation Ta = 25°C 10 ms* 0.3 0.1 0.05 0.03 0.01 0.1 *: Single nonrepetitive pulse Ta = 25°C Curves must be dated linearly with increase in temperature. 1 VCEO max 10 Collector-emitter voltage 100 VCE (V) PC – Ta Collector power dissipation PC (W) 2.0 1.6 1.2 0.8 0.4 0 0 25 50 75 100 Ambient temperature 125 Ta 150 175 (°C) 4 2004-07-26 2SC5176 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-26