HL6513FM ODE-208-043 (Z) Rev.0 Oct.20, 2006 Visible High Power Laser Diode Description The HL6513FM is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. Its beam divergence (parallel to the junction) has a small variation to the optical output power. It is suitable as light sources for laser scanners and optical equipment for measurement. Features Package Type • HL6513FM: FM • High output power and Wide operating temperature: 70 mW (pulse), PW = 100ns, duty = 50%, (Topr = 70°C) • Small package : φ 5.6 mm • Visible light output : λp = 658 nm Typ • The beam divergence (parallel to the junction) has a small variation to the output power. • Single longitudinal mode Internal Circuit 1 3 LD 2 Absolute Maximum Ratings (TC = 25°C) Item Optical output power PO Symbol Pulse optical output power Laser diode reverse voltage PO(pulse) VR(LD) Operating temperature Storage temperature Topr Tstg Ratings 50 Unit mW 1 70 * 2 mW V −10 to +70 * −40 to +85 °C °C 2 Notes: 1. Pulse condition : Pulse width = 100 ns, duty = 50% 2. The value of −10 to +70°C is effective under pulse operation. The value under CW operation is −10 to +60°C. Optical and Electrical Characteristics (TC = 25°C) Symbol Min Typ Max Unit Threshold current Operating current Item Ith Iop 30 — 45 115 60 135 mA mA — PO = 50 mW Operating voltage Beam divergence parallel to the junction VOP θ// 2.1 7 2.6 8.5 3.0 11 V ° PO = 50 mW PO = 50 mW Beam divergence perpendicular to the junction Astigmatism θ⊥ 18 21 26 ° PO = 50 mW AS — 5 — µm PO = 5 mW, NA = 0.55 Lasing wavelength λp 655 658 662 nm PO = 50 mW Rev.0 Oct. 20, 2006 page 1 of 4 Test Conditions HL6513FM Optical Output Power vs.Forward Current 50 TC = 25°C 40 TC = 0°C 30 TC = 60°C 20 10 0 0 40 80 120 160 Pulse Optical Output Power vs. Forward Current 80 TC = 25°C Optical output power, PO (mW) Optical output power, PO (mW) Typical Characteristic Curves TC = 0°C 60 40 TC = 70°C 20 Pw = 100ns duty = 50% 0 200 0 Forward current, IF (mA) 30 10 20 30 40 50 250 60 0.6 0.4 0.2 0 70 0 10 20 30 40 50 60 70 Case temperature,TC (°C) Far Field Pattern Wavelength vs. Case Temperature 1.0 675 PO = 50mW TC = 25°C PO = 50mW 0.8 670 Relative intensity Lasing Wavelength, λp (nm) 200 0.8 Case temperature, TC (°C) 665 660 Perpendicular 0.6 0.4 Parallel 0.2 655 650 150 Slope Efficiency vs. Case Temperature 1.0 Slope efficiency, ηS (mW/mA) Threshold current, Ith (mA) 50 0 100 Forward current, IF (mA) Threshold Current vs. Case Temperature 100 10 50 0 10 20 30 40 50 60 Case temperature, TC (°C) Rev.0 Oct. 20, 2006 page 2 of 4 70 0 –40 –30 –20 –10 0 10 20 30 40 Angle, θ ( ° ) HL6513FM Package Dimensions As of July, 2002 Unit: mm 0.4 +0.1 –0 φ 5.6 +0 –0.025 1.0 ± 0.1 (90˚) (0.4) 0.25 φ 4.1 ± 0.3 φ 3.55 ± 0.1 Glass 2.3 ± 0.2 φ 1.6 ± 0.2 1.27 6.5 ± 1.0 1.2 ± 0.1 Emitting Point 3 – φ 0.45 ± 0.1 1 1 2 3 3 2 φ 2.0 ± 0.2 OPJ Code JEDEC JEITA Mass (reference value) Rev.0 Oct. 20, 2006 page 3 of 4 LD/FM — — 0.3 g HL6513FM Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily injury, fire or other consequential damage due to operation of the OPJ product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from OPJ. 7. Contact our sales office for any questions regarding this document or OPJ products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses. Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical experiments, when you handle the product. When disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage. 3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ unless otherwise specified. Sales Offices Device Business Unit Opnext Japan, Inc. Takagi Bldg., 3F, 1-3-9, Iwamoto-cho, Chiyoda-ku, Tokyo 101-0032 Japan Tel: (03) 3865-5591 For the detail of Opnext, Inc., see the following homepage: Japan (Japanese) Other area (English) http://www.opnext.com/jp/products/ http://www.opnext.com/products/ ©2007 Opnext Japan, Inc., All rights reserved. Printed in Japan. Colophon 2.0 Rev.0 Oct. 20, 2006 page 4 of 4